JP-7854701-B2 - Power semiconductor device testing equipment

Inventors

• 阪田 茂男
• 春井 正徳
• 高原 博司

Assignees

• 株式会社クオルテック

Dates

Publication Date

20260507

Application Date

20220225

Priority Date

20210428

Claims (9)

1. A power semiconductor device test apparatus for testing a semiconductor device or semiconductor module having a first terminal, a second terminal, and a gate terminal, A power supply circuit that supplies a test current between the first terminal and the second terminal of the semiconductor element or semiconductor module, A constant current circuit is provided to supply a constant current between the first terminal and the second terminal of the semiconductor element or semiconductor module. A driver circuit that applies an off voltage, a first on voltage, and a second on voltage to the gate terminal, It comprises a voltage output circuit that outputs the terminal voltage between the first terminal and the second terminal, By applying the aforementioned off voltage, the semiconductor element or semiconductor module is turned off. The semiconductor element or semiconductor module is turned on by the application of the first or second on voltage. The on-resistance of the semiconductor element or semiconductor module due to the application of the second on-voltage is smaller than the on-resistance of the semiconductor element or semiconductor module due to the application of the first on-voltage . When the first ON voltage is applied, the test current is supplied to the semiconductor element or semiconductor module. A power semiconductor device test apparatus characterized by supplying the constant current to the semiconductor device or semiconductor module when the second ON voltage is applied, measuring the terminal voltage, and stopping or interrupting the test or changing the test conditions based on the terminal voltage.
2. A power semiconductor device test apparatus for testing a semiconductor device or semiconductor module having a first terminal, a second terminal, and a gate terminal, A power supply circuit that supplies a test current between the first terminal and the second terminal of the semiconductor element or semiconductor module, A driver circuit that applies an off voltage, a first on voltage, and a second on voltage to the gate terminal, It comprises a voltage output circuit that outputs the terminal voltage between the first terminal and the second terminal, By applying the aforementioned off voltage, the semiconductor element or semiconductor module is turned off. The semiconductor element or semiconductor module is turned on by the application of the first or second on voltage. The on-resistance of the semiconductor element or semiconductor module due to the application of the second on-voltage is smaller than the on-resistance of the semiconductor element or semiconductor module due to the application of the first on-voltage . When the first ON voltage and the second ON voltage are applied, the test current is supplied to the semiconductor element or semiconductor module. A power semiconductor device test apparatus characterized by measuring the terminal voltage when the second ON voltage is applied, and stopping or interrupting the test or changing the test conditions based on the terminal voltage.
3. A power semiconductor device test apparatus for testing a semiconductor device or semiconductor module having a first terminal, a second terminal, and a gate terminal, A power supply circuit that supplies a test current between the first terminal and the second terminal of the semiconductor element or semiconductor module, A constant current circuit is provided to supply a constant current between the first terminal and the second terminal of the semiconductor element or semiconductor module. A driver circuit that sequentially applies an off voltage, a second on voltage, a first on voltage, and a second on voltage to the gate terminal, It comprises a voltage output circuit that outputs the terminal voltage between the first terminal and the second terminal, By applying the aforementioned off voltage, the semiconductor element or semiconductor module is turned off. The semiconductor element or semiconductor module is turned on by the application of the first or second on voltage. The on-resistance of the semiconductor element or semiconductor module due to the application of the second on-voltage is smaller than the on-resistance of the semiconductor element or semiconductor module due to the application of the first on-voltage . When the first ON voltage is applied, the test current is supplied to the semiconductor element or semiconductor module. A power semiconductor device test apparatus characterized by supplying the constant current to the semiconductor device or semiconductor module when the second ON voltage is applied, measuring the terminal voltage, and stopping or interrupting the test or changing the test conditions based on the terminal voltage.
4. A power semiconductor device test apparatus for testing a semiconductor device or semiconductor module having a first terminal, a second terminal, and a gate terminal, A power supply circuit that supplies a test current between the first terminal and the second terminal of the semiconductor element or semiconductor module, A constant current circuit is provided to supply a constant current between the first terminal and the second terminal of the semiconductor element or semiconductor module. A driver circuit that applies an off voltage, a first on voltage, and a second on voltage to the gate terminal, It comprises a voltage output circuit that outputs the terminal voltage between the first terminal and the second terminal, By applying the aforementioned off voltage, the semiconductor element or semiconductor module is turned off. The semiconductor element or semiconductor module is turned on by the application of the first or second on voltage. The on-resistance of the semiconductor element or semiconductor module due to the application of the second on-voltage is smaller than the on-resistance of the semiconductor element or semiconductor module due to the application of the first on-voltage . When the first ON voltage is applied, the test current is supplied to the semiconductor element or semiconductor module. When the second ON voltage is applied, the constant current is supplied to the semiconductor element or semiconductor module. Multiple semiconductor elements or semiconductor modules are connected to the power supply circuit. The power semiconductor device test apparatus is characterized in that the test current is supplied to one semiconductor device or semiconductor module selected at the same time, the terminal voltage is measured, and the test is stopped or interrupted or the test conditions are changed based on the terminal voltage.
5. The switch circuit board further comprises a connecting member, a switch circuit, and a conductor plate. The conductor plate has a portion that protrudes from the switch circuit board, The power semiconductor device testing apparatus according to claim 1, 2, 3, or 4, characterized in that the connecting member is connected to the protruding portion.
6. It further includes a switch circuit, The switch circuit is connected to the output terminal of the power supply circuit. The operation of the aforementioned switch circuit short-circuits the output terminal of the power supply circuit, After the power supply circuit supplies the test current to the semiconductor element or semiconductor module, After operating the aforementioned switch circuit, The power semiconductor device testing apparatus according to claim 1, claim 3, or claim 4, characterized in that it supplies the constant current to the semiconductor device or semiconductor module.
7. The power semiconductor device testing apparatus according to claim 1, 2, 3, or 4, further comprising a temperature sensor disposed on at least one of the first and second terminals.
8. A resistor circuit is connected between the output of the driver circuit and the gate terminal. The power semiconductor device testing apparatus according to claim 1, 2, 3, or 4, characterized in that the resistance value of the resistor circuit when the first ON voltage is applied and the resistance value of the resistor circuit when the second ON voltage is applied can be changed.
9. The voltage value of the first ON voltage described above is variable. The power semiconductor device testing apparatus according to claim 1, 2, 3, or 4, characterized in that the second on-voltage is a higher voltage than the first on-voltage.

Description

The present invention relates to an electrical element testing apparatus for performing power cycle tests on electrical elements such as SiC transistors, IGBTs, GaN transistors, MOS-FETs, bipolar transistors, positors, thermistors, and resistive elements, as well as semiconductor elements and methods for testing electrical elements. This invention relates particularly to test equipment and test methods for semiconductor devices, and evaluation equipment and evaluation methods for semiconductor devices. This invention provides a test apparatus and test method for semiconductor devices that can efficiently reproduce stress close to failure modes in actual operating environments and conditions, enabling high-precision evaluation and testing of power semiconductor devices. The lifespan of a power semiconductor device includes the lifespan due to thermal fatigue caused by the heat generated by the power semiconductor device itself, and the lifespan due to thermal fatigue caused by temperature changes in the external environment surrounding the power semiconductor device. Furthermore, there is also the lifespan due to voltage fatigue caused by the voltage applied to the gate insulating film of the power semiconductor device. Generally, life testing of power semiconductor devices involves repeatedly switching the power on and off of the power semiconductor device. The test is performed by applying voltage to the emitter terminal (source terminal), collector terminal (drain terminal), etc., and passing a test current, while applying a periodic on/off signal (operated/deactivated signal) to the base terminal (gate terminal). The current applied to semiconductor elements during testing is very high, several hundred amperes. Therefore, low-resistance connection wiring is required to avoid overheating and voltage drop. Furthermore, there are many types of tests, and the connection wiring needs to be modified according to the type of test. This modification of connection wiring required a considerable amount of time. Japanese Patent Publication No. 2017-17822 This is a block diagram and explanatory diagram of the semiconductor device testing apparatus of the present invention.This is a block diagram and explanatory diagram of the semiconductor device testing apparatus of the present invention.This is an explanatory diagram of the semiconductor device testing apparatus and testing method of the present invention.This is an explanatory diagram of the semiconductor device testing apparatus and testing method of the present invention.This is an explanatory diagram of the semiconductor device testing apparatus and testing method of the present invention.This is an explanatory diagram of the semiconductor device testing apparatus and testing method of the present invention.This is a block diagram and explanatory diagram of the semiconductor device testing apparatus of the present invention.This is a block diagram and explanatory diagram of the semiconductor device testing apparatus of the present invention.This is a block diagram and explanatory diagram of the semiconductor device testing apparatus of the present invention.This is a block diagram and explanatory diagram of the semiconductor device testing apparatus of the present invention.These are explanatory diagrams and configuration diagrams of the heat pipe section of the semiconductor device testing apparatus of the present invention.These are explanatory diagrams and configuration diagrams of the heat pipe section of the semiconductor device testing apparatus of the present invention.This is an explanatory diagram and configuration diagram of the semiconductor element mounting section of the semiconductor element testing apparatus of the present invention.This is an explanatory diagram and configuration diagram of the semiconductor element mounting section of the semiconductor element testing apparatus of the present invention.This is an explanatory diagram and configuration diagram of the semiconductor element mounting section of the semiconductor element testing apparatus of the present invention.This is an explanatory diagram and configuration diagram of the semiconductor element mounting section of the semiconductor element testing apparatus of the present invention.This is an explanatory diagram and configuration diagram of the semiconductor element mounting section of the semiconductor element testing apparatus of the present invention.This is an explanatory diagram and configuration diagram of the semiconductor element mounting section of the semiconductor element testing apparatus of the present invention.This is an explanatory diagram and configuration diagram of the semiconductor element mounting section of the semiconductor element testing apparatus of the present invention.This is an explanatory diagram and configuration diagram of the semiconductor element mounting section of the semiconductor element testing apparatus of the present invention.This is a b