JP-7854857-B2 - Method for manufacturing semiconductor modules, method for manufacturing power converters, semiconductor modules, power converters

JP7854857B2JP 7854857 B2JP7854857 B2JP 7854857B2JP-7854857-B2

Inventors

藤野純司
川添智香
小川道雄

Assignees

三菱電機株式会社

Dates

Publication Date: 20260507
Application Date: 20220526

Claims (11)

A semiconductor element is bonded to the upper surface of the insulating substrate. The insulating substrate on which the semiconductor elements are bonded is joined to the base portion via the first solder. The joining of the insulating substrate and the base portion is performed by cooling the first solder while applying vibration to it after the temperature has started to decrease, with the heated first solder in contact with the insulating substrate and the base portion. The insulating substrate and the base portion are transported by conveyor rollers while in contact with the heated first solder, respectively. The conveyor rollers include eccentric rollers whose rotation centers are offset, The joining of the insulating substrate and the base portion involves cooling the first solder while the insulating substrate and the base portion are being transported by the conveyor roller, and then, when the first solder is being transported by the eccentric roller after the temperature has started to drop, the first solder is subjected to vibrations generated by the eccentric roller. A method for manufacturing semiconductor modules.
A semiconductor element is bonded to the upper surface of the insulating substrate. The insulating substrate on which the semiconductor elements are bonded is joined to the base portion via the first solder. The joining of the insulating substrate and the base portion is performed by bringing the heated first solder into contact with the insulating substrate and the base portion, and then cooling the first solder while applying vibration to it after the temperature has started to decrease. The joining of the insulating substrate and the base portion is performed by cooling the heated first solder while it is in contact with the insulating substrate and the base portion, and then applying vibration to the first solder after it has fallen below the liquidus temperature. A method for manufacturing semiconductor modules.
A method for manufacturing a semiconductor module according to claim 2 , The bonding of the insulating substrate and the base portion is achieved by cooling the first solder after the temperature of the first solder has started to decrease, while applying vibrations generated by an ultrasonic horn that contacts the lower surface of the base portion. A method for manufacturing semiconductor modules.
A method for manufacturing a semiconductor module according to claim 2 , The bonding between the insulating substrate and the base portion is achieved by cooling the first solder after the temperature has started to decrease, while applying vibrations generated by an ultrasonic horn that contacts the upper surface of the semiconductor element. A method for manufacturing semiconductor modules.
A method for manufacturing a semiconductor module according to claim 1 or 2, The semiconductor element is joined to the upper surface of the insulating substrate via a second solder. The melting point of the second solder is higher than the melting point of the first solder. A method for manufacturing semiconductor modules.
A method for manufacturing a semiconductor module according to claim 5 , The joining of the insulating substrate and the base portion is performed by cooling the heated first solder while it is in contact with the insulating substrate and the base portion, and then applying vibration to the first solder after it has cooled to a temperature lower than the melting point of the second solder. A method for manufacturing semiconductor modules.
A method for manufacturing a semiconductor module according to claim 1 or 2, The base portion has a fin structure on the side opposite to the side that is joined to the insulating substrate. A method for manufacturing semiconductor modules.
A semiconductor module manufactured by the manufacturing method described in claim 1 or 2, and provided with a conversion circuit that converts and outputs the input power, A control circuit is provided that outputs a control signal to the conversion circuit for controlling the conversion circuit. A method for manufacturing a power conversion device.
A semiconductor element bonded to the upper surface of an insulating substrate, The insulating substrate on which the semiconductor elements are bonded comprises a base portion which is bonded via a first solder, The insulating substrate and the base portion are joined by applying vibration to the heated first solder while it is in contact with the insulating substrate and the base portion, and then cooling the first solder after it has started to cool down. The insulating substrate and the base portion are transported by conveyor rollers while in contact with the heated first solder, respectively. The conveyor rollers include eccentric rollers whose rotation centers are offset, The joining of the insulating substrate and the base portion involves cooling the first solder while the insulating substrate and the base portion are being transported by the conveyor roller, and then, when the first solder is being transported by the eccentric roller after the temperature has started to drop, the first solder is subjected to vibrations generated by the eccentric roller. Semiconductor module.
A semiconductor element bonded to the upper surface of an insulating substrate, The insulating substrate on which the semiconductor elements are bonded comprises a base portion which is bonded via a first solder, The insulating substrate and the base portion are joined by applying vibration to the heated first solder while it is in contact with the insulating substrate and the base portion, and then cooling the first solder after it has started to cool down. The joining of the insulating substrate and the base portion is performed by cooling the heated first solder while it is in contact with the insulating substrate and the base portion, and then applying vibration to the first solder after it has fallen below the liquidus temperature. Semiconductor module.
A semiconductor module according to claim 9 or 10 , and a conversion circuit that converts and outputs the input power, The system includes a control circuit that outputs a control signal to the conversion circuit for controlling the conversion circuit, Power converter.

Description

The technology disclosed in this specification relates to semiconductor modules. Power modules are becoming increasingly common in a wide range of products, including industrial equipment, home appliances, and information terminals. Power modules used in electric vehicles or industrial equipment that handle high currents and high voltages require high heat dissipation capabilities (see, for example, Patent Document 1). In power modules, if shrinkage cavities (solidification cracks) occur at the solder joint between the fin base and the ceramic substrate due to solder solidification shrinkage, this hinders heat conduction and reduces heat dissipation. Furthermore, power modules are also required to have a package form that can be applied to SiC semiconductors, which are likely to become the mainstream in the future due to their high operating temperature and excellent efficiency. Patent No. 6008750 This is a schematic cross-sectional view illustrating an example of a manufacturing process for a power module as a semiconductor module according to an embodiment.This is a schematic cross-sectional view illustrating an example of a manufacturing process for a power module as a semiconductor module according to an embodiment.This is a schematic cross-sectional view illustrating an example of a manufacturing process for a power module as a semiconductor module according to an embodiment.This is a schematic cross-sectional view illustrating an example of a manufacturing process for a power module as a semiconductor module according to an embodiment.This is a plan view showing an example of the configuration of a power module according to an embodiment.This figure shows an example of the application of a power module according to the embodiment.This figure shows another example of the application of the power module according to the embodiment.This figure shows another example of a power module manufacturing process according to the embodiment.This is a schematic cross-sectional view illustrating an example of a manufacturing process for a power module as a semiconductor module according to an embodiment.This is a schematic cross-sectional view showing an example of the configuration of a power module as a semiconductor module according to an embodiment.This is a schematic cross-sectional view showing an example of the configuration of a power module according to an embodiment.This is a schematic cross-sectional view illustrating another example of the configuration of a power module according to the embodiment.This diagram conceptually illustrates an example of the configuration of a power conversion system including a power conversion device according to an embodiment. The embodiments will be described below with reference to the attached drawings. While detailed features are shown in the following embodiments for technical explanation purposes, these are illustrative examples, and not all of them are necessarily essential features for the embodiments to be implementable. Please note that the drawings are for illustrative purposes only, and for the sake of clarity, some components may be omitted or simplified as appropriate. Furthermore, the relative sizes and positions of components shown in different drawings are not necessarily accurately represented and may be modified as appropriate. In addition, hatching may be used in drawings other than cross-sectional views, such as plan views, to facilitate understanding of the embodiment. Furthermore, in the following explanation, similar components will be denoted by the same symbols, and their names and functions will also be the same. Therefore, detailed explanations of these components may be omitted to avoid redundancy. Furthermore, in the descriptions contained in this specification, when a certain component is described as "equipped with," "includes," or "has," unless otherwise specified, this is not an exclusive expression that excludes the existence of other components. Furthermore, even if ordinal numbers such as "first" or "second" are used in the descriptions contained herein, these terms are used for convenience to facilitate understanding of the embodiments, and the content of the embodiments is not limited to the order that may result from these ordinal numbers. Furthermore, even if terms such as "top," "bottom," "left," "right," "side," "bottom," "front," or "back" are used in the descriptions of this specification to indicate specific positions or directions, these terms are used for convenience to facilitate understanding of the embodiments and are not related to the actual positions or directions in which the embodiments are carried out. Furthermore, in the descriptions contained in this specification, when terms such as "the upper surface of..." or "the lower surface of..." are used, this includes not only the upper or lower surface of the component in question itself, but also the state in which other components are formed on the upper or lower surf