JP-7855112-B2 - display device

JP7855112B2JP 7855112 B2JP7855112 B2JP 7855112B2JP-7855112-B2

Inventors

保坂泰靖
島行徳
岡崎健一
山崎舜平

Assignees

株式会社半導体エネルギー研究所

Dates

Publication Date: 20260507
Application Date: 20250402
Priority Date: 20120720

Claims (4)

A pixel region having a first transistor, A display device having a drive circuit region adjacent to the outside of the pixel region and having a second transistor, A first conductive film having a region in contact with the upper surface of the substrate and functioning as the gate electrode of the first transistor, A second conductive film having a region in contact with the upper surface of the substrate and functioning as the gate electrode of the second transistor, A first insulating film having a region in contact with the upper surface of the first conductive film and a region in contact with the upper surface of the second conductive film, and having the function of a gate insulating film of the first transistor and the function of a gate insulating film of the second transistor, A first oxide semiconductor layer having a region in contact with the upper surface of the first insulating film and functioning as a channel formation region of the first transistor, A second oxide semiconductor layer having a region in contact with the upper surface of the first insulating film and functioning as a channel formation region for the second transistor, A third conductive film having a region in contact with the upper surface of the first oxide semiconductor layer and functioning as either the source electrode or the drain electrode of the first transistor, A fourth conductive film having a region in contact with the upper surface of the first oxide semiconductor layer and functioning as the other of the source electrode or drain electrode of the first transistor, A fifth conductive film having a region in contact with the upper surface of the second oxide semiconductor layer and functioning as either the source electrode or the drain electrode of the second transistor, A sixth conductive film having a region in contact with the upper surface of the second oxide semiconductor layer and functioning as the other of the source electrode or drain electrode of the second transistor, A second insulating film having a region in contact with the upper surface of the third conductive film, a region in contact with the upper surface of the fourth conductive film, a region in contact with the upper surface of the fifth conductive film, and a region in contact with the upper surface of the sixth conductive film, A third insulating film having a region in contact with the upper surface of the second insulating film, A seventh conductive film having a region in contact with the upper surface of the third insulating film, A fourth insulating film having a region in contact with the upper surface of the third insulating film and a region in contact with the upper surface of the seventh conductive film, An eighth conductive film having a region in contact with the upper surface of the fourth insulating film and functioning as a pixel electrode, The eighth conductive film has a region that contacts the upper surface of the second conductive film or the third conductive film through the first opening in the third insulating film and the second opening in the fourth insulating film. The first and second openings do not have a region that overlaps with the first oxide semiconductor layer. The diameter of the first opening is larger than the diameter of the second opening. The end of the fourth insulating film is located between the pixel region and the drive circuit region. The first conductive film and the second conductive film each have a laminated structure comprising a film containing nitrogen and tantalum, and a tungsten film. The first insulating film has a laminated structure comprising an insulating film having nitrogen and silicon, and an insulating film having oxygen and silicon. The first oxide semiconductor layer and the second oxide semiconductor layer each have a stacked structure of a first oxide semiconductor film and a second oxide semiconductor film, The third conductive film, the fourth conductive film, the fifth conductive film, and the sixth conductive film each have a laminated structure of a titanium film, an aluminum film, and a titanium film. The second insulating film has a laminated structure comprising an insulating film having oxygen and silicon, and an insulating film having nitrogen and silicon. The third insulating film comprises an organic insulating material, The seventh conductive film and the eighth conductive film each contain indium, tin, and oxygen. The display device comprises nitrogen and silicon as the fourth insulating film.
A pixel region having a first transistor, A display device having a drive circuit region adjacent to the outside of the pixel region and having a second transistor, A first conductive film having a region in contact with the upper surface of the substrate and functioning as the gate electrode of the first transistor, A second conductive film having a region in contact with the upper surface of the substrate and functioning as the gate electrode of the second transistor, A first insulating film having a region in contact with the upper surface of the first conductive film and a region in contact with the upper surface of the second conductive film, and having the function of a gate insulating film of the first transistor and the function of a gate insulating film of the second transistor, A first oxide semiconductor layer having a region in contact with the upper surface of the first insulating film and functioning as a channel formation region of the first transistor, A second oxide semiconductor layer having a region in contact with the upper surface of the first insulating film and functioning as a channel formation region for the second transistor, A third conductive film having a region in contact with the upper surface of the first oxide semiconductor layer and functioning as either the source electrode or the drain electrode of the first transistor, A fourth conductive film having a region in contact with the upper surface of the first oxide semiconductor layer and functioning as the other of the source electrode or drain electrode of the first transistor, A fifth conductive film having a region in contact with the upper surface of the second oxide semiconductor layer and functioning as either the source electrode or the drain electrode of the second transistor, A sixth conductive film having a region in contact with the upper surface of the second oxide semiconductor layer and functioning as the other of the source electrode or drain electrode of the second transistor, A second insulating film having a region in contact with the upper surface of the third conductive film, a region in contact with the upper surface of the fourth conductive film, a region in contact with the upper surface of the fifth conductive film, and a region in contact with the upper surface of the sixth conductive film, A third insulating film having a region in contact with the upper surface of the second insulating film, A seventh conductive film having a region in contact with the upper surface of the third insulating film, A fourth insulating film having a region in contact with the upper surface of the third insulating film and a region in contact with the upper surface of the seventh conductive film, An eighth conductive film having a region in contact with the upper surface of the fourth insulating film and functioning as a pixel electrode, The eighth conductive film has a region that contacts the upper surface of the second conductive film or the third conductive film through the first opening in the third insulating film and the second opening in the fourth insulating film. The first and second openings do not have a region that overlaps with the first oxide semiconductor layer. The diameter of the first opening is larger than the diameter of the second opening. The end of the fourth insulating film does not overlap with the drive circuit region. The first conductive film and the second conductive film each have a laminated structure comprising a film containing nitrogen and tantalum, and a tungsten film. The first insulating film has a laminated structure comprising an insulating film having nitrogen and silicon, and an insulating film having oxygen and silicon. The first oxide semiconductor layer and the second oxide semiconductor layer each have a stacked structure of a first oxide semiconductor film and a second oxide semiconductor film, The third conductive film, the fourth conductive film, the fifth conductive film, and the sixth conductive film each have a laminated structure of a titanium film, an aluminum film, and a titanium film. The second insulating film has a laminated structure comprising an insulating film having oxygen and silicon, and an insulating film having nitrogen and silicon. The third insulating film comprises an organic insulating material, The seventh conductive film and the eighth conductive film each contain indium, tin, and oxygen. The display device comprises nitrogen and silicon as the fourth insulating film.
A pixel region having a first transistor, A display device having a drive circuit region adjacent to the outside of the pixel region and having a second transistor, A first conductive film having a region in contact with the upper surface of the substrate and functioning as the gate electrode of the first transistor, A second conductive film having a region in contact with the upper surface of the substrate and functioning as the gate electrode of the second transistor, A first insulating film having a region in contact with the upper surface of the first conductive film and a region in contact with the upper surface of the second conductive film, and having the function of a gate insulating film of the first transistor and the function of a gate insulating film of the second transistor, A first oxide semiconductor layer having a region in contact with the upper surface of the first insulating film and functioning as a channel formation region of the first transistor, A second oxide semiconductor layer having a region in contact with the upper surface of the first insulating film and functioning as a channel formation region for the second transistor, A third conductive film having a region in contact with the upper surface of the first oxide semiconductor layer and functioning as either the source electrode or the drain electrode of the first transistor, A fourth conductive film having a region in contact with the upper surface of the first oxide semiconductor layer and functioning as the other of the source electrode or drain electrode of the first transistor, A fifth conductive film having a region in contact with the upper surface of the second oxide semiconductor layer and functioning as either the source electrode or the drain electrode of the second transistor, A sixth conductive film having a region in contact with the upper surface of the second oxide semiconductor layer and functioning as the other of the source electrode or drain electrode of the second transistor, A second insulating film having a region in contact with the upper surface of the third conductive film, a region in contact with the upper surface of the fourth conductive film, a region in contact with the upper surface of the fifth conductive film, and a region in contact with the upper surface of the sixth conductive film, A third insulating film having a region in contact with the upper surface of the second insulating film, A seventh conductive film having a region in contact with the upper surface of the third insulating film, A fourth insulating film having a region in contact with the upper surface of the third insulating film and a region in contact with the upper surface of the seventh conductive film, An eighth conductive film having a region in contact with the upper surface of the fourth insulating film and functioning as a pixel electrode, The eighth conductive film has a region that contacts the upper surface of the second conductive film or the third conductive film through the first opening in the third insulating film and the second opening in the fourth insulating film. The first and second openings do not have a region that overlaps with the first oxide semiconductor layer. The diameter of the first opening is larger than the diameter of the second opening. The end of the fourth insulating film does not overlap with the transistors in the drive circuit region. The first conductive film and the second conductive film each have a laminated structure comprising a film containing nitrogen and tantalum, and a tungsten film. The first insulating film has a laminated structure comprising an insulating film having nitrogen and silicon, and an insulating film having oxygen and silicon. The first oxide semiconductor layer and the second oxide semiconductor layer each have a stacked structure of a first oxide semiconductor film and a second oxide semiconductor film, The third conductive film, the fourth conductive film, the fifth conductive film, and the sixth conductive film each have a laminated structure of a titanium film, an aluminum film, and a titanium film. The second insulating film has a laminated structure comprising an insulating film having oxygen and silicon, and an insulating film having nitrogen and silicon. The third insulating film comprises an organic insulating material, The seventh conductive film and the eighth conductive film each contain indium, tin, and oxygen. The display device comprises nitrogen and silicon as the fourth insulating film.
A pixel region having a first transistor, A display device having a drive circuit region adjacent to the outside of the pixel region and having a second transistor, A first conductive film having a region in contact with the upper surface of the substrate and functioning as the gate electrode of the first transistor, A second conductive film having a region in contact with the upper surface of the substrate and functioning as the gate electrode of the second transistor, A first insulating film having a region in contact with the upper surface of the first conductive film and a region in contact with the upper surface of the second conductive film, and having the function of a gate insulating film of the first transistor and the function of a gate insulating film of the second transistor, A first oxide semiconductor layer having a region in contact with the upper surface of the first insulating film and functioning as a channel formation region of the first transistor, A second oxide semiconductor layer having a region in contact with the upper surface of the first insulating film and functioning as a channel formation region for the second transistor, A third conductive film having a region in contact with the upper surface of the first oxide semiconductor layer and functioning as either the source electrode or the drain electrode of the first transistor, A fourth conductive film having a region in contact with the upper surface of the first oxide semiconductor layer and functioning as the other of the source electrode or drain electrode of the first transistor, A fifth conductive film having a region in contact with the upper surface of the second oxide semiconductor layer and functioning as either the source electrode or the drain electrode of the second transistor, A sixth conductive film having a region in contact with the upper surface of the second oxide semiconductor layer and functioning as the other of the source electrode or drain electrode of the second transistor, A second insulating film having a region in contact with the upper surface of the third conductive film, a region in contact with the upper surface of the fourth conductive film, a region in contact with the upper surface of the fifth conductive film, and a region in contact with the upper surface of the sixth conductive film, A third insulating film having a region in contact with the upper surface of the second insulating film, A seventh conductive film having a region in contact with the upper surface of the third insulating film, A fourth insulating film having a region in contact with the upper surface of the third insulating film and a region in contact with the upper surface of the seventh conductive film, An eighth conductive film having a region in contact with the upper surface of the fourth insulating film and functioning as a pixel electrode, The eighth conductive film has a region that contacts the upper surface of the second conductive film or the third conductive film through the first opening in the third insulating film and the second opening in the fourth insulating film. The first and second openings do not have a region that overlaps with the first oxide semiconductor layer. The diameter of the first opening is larger than the diameter of the second opening. The edges of the fourth insulating film do not overlap with the second conductive film, the fifth conductive film, the sixth conductive film, or the second oxide semiconductor layer. The first conductive film and the second conductive film each have a laminated structure comprising a film containing nitrogen and tantalum, and a tungsten film. The first insulating film has a laminated structure comprising an insulating film having nitrogen and silicon, and an insulating film having oxygen and silicon. The first oxide semiconductor layer and the second oxide semiconductor layer each have a stacked structure of a first oxide semiconductor film and a second oxide semiconductor film, The third conductive film, the fourth conductive film, the fifth conductive film, and the sixth conductive film each have a laminated structure of a titanium film, an aluminum film, and a titanium film. The second insulating film has a laminated structure comprising an insulating film having oxygen and silicon, and an insulating film having nitrogen and silicon. The third insulating film comprises an organic insulating material, The seventh conductive film and the eighth conductive film each contain indium, tin, and oxygen. The display device comprises nitrogen and silicon as the fourth insulating film.

Description

This invention relates to a display device using a liquid crystal panel or a display device using an organic EL panel. It also relates to an electronic device having said display device. In recent years, there has been a surge in the development of display devices using liquid crystal panels and organic EL panels. These display devices can be broadly classified into two types: those in which only the pixel control transistors (pixel transistors) are formed on the substrate and the scanning circuit (driving circuit) is handled by a peripheral IC, and those in which the scanning circuit is formed on the same substrate as the pixel transistors. To achieve narrower bezels on display devices or reduce the cost of peripheral ICs, integrated drive circuits are advantageous. However, the transistors used in the drive circuits require higher electrical characteristics than those used in pixel transistors (e.g., field-effect mobility (μFE) or threshold voltage). While silicon-based semiconductor materials are widely known as semiconductor thin films applicable to transistors, oxide semiconductors are attracting attention as other materials. For example, indium (In) with an electron carrier concentration of less than 10¹⁸ / cm³ is used as a semiconductor thin film for transistors. Transistors using amorphous oxides containing gallium (Ga) and zinc (Zn) have been disclosed (see, for example, Patent Document 1). Transistors using oxide semiconductors as semiconductor layers have a higher field-effect mobility than transistors using amorphous silicon, a silicon-based semiconductor material, as their semiconductor layer. Therefore, they have a faster operating speed, making them suitable for display devices with integrated drive circuits, and their manufacturing process is simpler than that of transistors using polycrystalline silicon as their semiconductor layer. However, transistors that use oxide semiconductors as semiconductor layers have a problem in that impurities such as hydrogen and water can enter the oxide semiconductor, forming carriers, which causes the electrical characteristics of the transistor to fluctuate. To solve the above-mentioned problems, a transistor with improved reliability has been disclosed by setting the concentration of hydrogen atoms in the oxide semiconductor film used as the channel formation region of the transistor to less than 1 × 10¹⁶ cm⁻³ (for example, Patent Document 2). Japanese Patent Publication No. 2006-165528Japanese Patent Publication No. 2011-139047 A diagram illustrating the top view of one type of display device.A diagram illustrating a cross-section of one type of display device.A diagram illustrating the top view of one type of display device.A diagram illustrating a cross-section of one type of display device.A circuit diagram and a cross-sectional view showing an example of a display device with an image sensor according to one aspect of the present invention.A diagram showing an example of a tablet terminal according to one aspect of the present invention.A figure showing an example of an electronic device according to one aspect of the present invention.A diagram showing the ionic strength of the released gas at various mass-to-charge ratios.A diagram showing the ionic intensity of each mass-to-charge ratio as a function of the substrate surface temperature.Cross-sectional view of the sample.A diagram showing the electrical characteristics of each sample. Embodiments of the present invention will be described in detail below with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and its form and details can be modified in various ways. Furthermore, the present invention is not to be interpreted as being limited to the embodiments described below. In the embodiments described below, reference numerals indicating the same elements are used consistently across different drawings. Note that the components shown in the drawings, i.e., the thickness and width of layers and regions, their relative positional relationships, etc., are exaggerated for clarity in the explanation of the embodiments. Furthermore, in this specification, the terms "electrode" and "wiring" do not functionally limit these components. For example, "electrode" may be used as part of "wiring," and vice versa. Moreover, the terms "electrode" and "wiring" may refer to multiple "electrodes" or " This includes cases where the wiring is formed as an integrated unit. Furthermore, in this specification, a silicon nitride film is defined as a film containing nitrogen, oxygen, silicon, A film containing as a component, with a nitrogen content greater than the oxygen content. Furthermore, a silicon oxidizide film is a film containing oxygen, nitrogen, and silicon as components, with a oxygen content greater than the nitrogen content. Furthermore, the functions of "source" and "drain" may be reversed wh