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JP-7855461-B2 - Semiconductor equipment

JP7855461B2JP 7855461 B2JP7855461 B2JP 7855461B2JP-7855461-B2

Inventors

  • 服部 聡
  • 田靡 京
  • 田中 敦士

Assignees

  • 株式会社東芝
  • 東芝デバイス＆ストレージ株式会社

Dates

Publication Date
20260508
Application Date
20220902

Claims (9)

  1. A semiconductor chip having a first surface and a second surface opposite to the first surface, A first conductive member facing and electrically connected to the first electrode on the first surface of the semiconductor chip, The semiconductor chip and the second conductive member spaced apart from the first conductive member, The semiconductor chip, the third conductive member spaced apart from the first and second conductive members, A first connector that faces the second electrode on the second surface of the semiconductor chip and electrically connects the second electrode and the second conductive member, A second connector facing the third electrode on the second surface of the semiconductor chip and electrically connecting the third electrode and the third conductive member, A first connecting member that connects the first connector and the second surface of the semiconductor chip, The device comprises a second connecting member that connects the first connector and the second conductive member, The first connector has a plurality of first protrusions that project in a first direction from the first conductive member to the second conductive member, The second connecting member is provided correspondingly between the plurality of first protrusions and the second conductive member, A third connecting member that connects the second connector and the second surface of the semiconductor chip, The present invention further comprises a fourth connecting member that connects the second connector and the third conductive member, The second connector has a plurality of second protrusions projecting in a second direction from the first conductive member to the third conductive member, The third conductive member protrudes in the direction opposite to the second direction and has a plurality of third protrusions corresponding to each of the plurality of second protrusions, The fourth connecting member is provided correspondingly between the plurality of second protrusions and the plurality of third protrusions in the semiconductor device.
  2. The semiconductor device according to claim 1, wherein the second connecting member corresponding to each of the plurality of first protrusions is separate.
  3. The semiconductor device according to claim 1, wherein the fourth connecting member corresponding to each of the plurality of second protrusions is separate.
  4. The second conductive member protrudes in the direction opposite to the first direction and has a plurality of fourth protrusions corresponding to the first protrusion, The semiconductor device according to claim 1, wherein the second connecting member is provided between the plurality of first protrusions and the plurality of fourth protrusions.
  5. A semiconductor chip having a first surface and a second surface opposite to the first surface, A first conductive member facing and electrically connected to the first electrode on the first surface of the semiconductor chip, The semiconductor chip and the second conductive member spaced apart from the first conductive member, The semiconductor chip, the third conductive member spaced apart from the first and second conductive members, A first connector that faces the second electrode on the second surface of the semiconductor chip and electrically connects the second electrode and the second conductive member, A second connector facing the third electrode on the second surface of the semiconductor chip and electrically connecting the third electrode and the third conductive member, A first connecting member that connects the first connector and the second surface of the semiconductor chip, The device comprises a second connecting member that connects the first connector and the second conductive member, The first connector has a plurality of first protrusions that project in a first direction from the first conductive member to the second conductive member, The second connecting member is provided correspondingly between the plurality of first protrusions and the second conductive member, The second conductive member has a first groove between a plurality of first regions corresponding to the plurality of first protrusions, The semiconductor device wherein the second connecting member is provided between the plurality of first protrusions and the plurality of first regions, and is not provided in the first groove.
  6. The semiconductor device according to claim 4, wherein, in a cross-section perpendicular to the first direction, the first width of the surface on which the first projection faces the third projection is smaller than the second width of the surface on which the third projection faces the first projection.
  7. The semiconductor device according to claim 1, wherein the second connecting member covers the bottom surface and lower part of the side surface of the first protrusion.
  8. The second electrode is a source electrode, The semiconductor device according to claim 1 or claim 5, wherein the third electrode is a gate electrode.
  9. The semiconductor device according to claim 1 or 5, wherein the first connector has a protrusion that contacts the second connecting member.

Description

This embodiment relates to a semiconductor device. In semiconductor assembly processes, semiconductor chips are sometimes joined between leads and connectors, with electrodes extending from either the front or back surface of the semiconductor chip. In this case, the semiconductor chip is connected to the leads and connector by reflowing the solder supplied between the leads and the semiconductor chip, and between the semiconductor chip and the connector. However, this solder reflow process had problems: the solder would flow, causing the semiconductor chip to shift relative to the leads, or the connector to shift away from the semiconductor chip. Japanese Patent Publication No. 2018-063993 (U.S. Patent Publication No. 2018-102308)Japanese Patent Publication No. 2010-123686 (U.S. Patent No. 8,299,600)Japanese Patent Publication No. 2002-151554 (U.S. Patent No. 6,849,930)Japanese Patent Publication No. 2019-087657 A cross-sectional view showing an example of the configuration of a semiconductor device according to the first embodiment.A cross-sectional view showing an example of the configuration of a semiconductor device according to the first embodiment.A perspective view showing an example of the configuration of a semiconductor device according to the first embodiment.An enlarged cross-sectional view of the area shown in Figure 1B.A schematic plan view showing an example of the configuration of a semiconductor device according to the first embodiment.A schematic cross-sectional view showing an example of the configuration of a semiconductor device according to the first embodiment.A schematic cross-sectional view showing an example configuration of one part p1, its corresponding part p3, and a connecting member.A schematic cross-sectional view showing an example of the configuration of the second connector according to the first embodiment.A schematic cross-sectional view showing an example of the configuration of one part p1_3, its corresponding part p3_3, and a connecting member.A cross-sectional view showing an example of the configuration of a semiconductor device according to the second embodiment.A cross-sectional view showing an example of the configuration of a semiconductor device according to the second embodiment.A cross-sectional view showing an example of the configuration of a semiconductor device according to the third embodiment.A cross-sectional view showing an example of the configuration of a semiconductor device according to the third embodiment. The embodiments of the present invention will be described below with reference to the drawings. These embodiments are not limiting to the present invention. The drawings are schematic or conceptual, and the proportions of each part may not necessarily be identical to those of actual objects. In the specification and drawings, elements similar to those described above are denoted by the same reference numerals, and detailed explanations are omitted as appropriate. (First Embodiment) Figures 1A and 1B are cross-sectional views showing an example configuration of the semiconductor device 100 according to the first embodiment. Figure 1C is a perspective view showing an example configuration of the semiconductor device according to the first embodiment. Figure 1B is a cross-sectional view taken along line A1-A2 in Figure 1C. The semiconductor device 100 according to the first embodiment comprises a semiconductor chip 10, a first conductive member 21, a second conductive member 22, a third conductive member 23, a first connector 51, a second connector 52, connecting members 41-43, and a resin part 30. The semiconductor chip 10 may be, for example, a bipolar transistor, MOSFET (Metal Oxid Semiconductor Field Effect Transistor), or IGBT (Insulated Gate Bipolar Transistor) capable of passing a large current between the source and drain based on the gate voltage. As shown in Figure 1A, the semiconductor chip 10 includes a first electrode 11 (e.g., a drain electrode), a second electrode 12 (e.g., a source electrode), a third electrode 13 (e.g., a gate electrode), and a semiconductor layer 10s. The semiconductor chip 10 has a first surface F1 and a second surface F2 opposite to the first surface F1. The drain electrode 11, which serves as the first electrode, is provided on the first surface F1 of the semiconductor chip 10, while the source electrode 12, which serves as the second electrode, and the gate electrode 13, which serves as the third electrode, are provided on the second surface F2 of the semiconductor chip 10. The semiconductor layer 10s is provided between the drain electrode 11 and the source electrode 12. The first conductive member 21 is the base region on which the semiconductor chip 10 is mounted and is part of the lead frame. The first conductive member 21 faces and is electrically connected to the drain electrode 11 on the first surface F1. For example, a conductive material such as copper is used for the first conductive member 21. A