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JP-7855598-B2 - Solid-state image sensor and imaging device

JP7855598B2JP 7855598 B2JP7855598 B2JP 7855598B2JP-7855598-B2

Inventors

  • 栃木 靖久
  • 松村 勇佑
  • 佐野 文昭
  • 半澤 克彦

Assignees

  • ソニーセミコンダクタソリューションズ株式会社

Dates

Publication Date
20260508
Application Date
20220609
Priority Date
20210917

Claims (20)

  1. Multiple pixel regions composed of multiple pixels, It comprises a plurality of first energy storage units corresponding to each of the aforementioned pixel regions, The plurality of first pixels within the aforementioned pixel region are: Photoelectric conversion unit, It has a first element that makes a photoelectric conversion unit adjacent to at least one of the vertical and horizontal pixels conductive or non-conductive, The second pixel within the aforementioned pixel region is Photoelectric conversion unit, A first element that makes a photoelectric conversion unit adjacent to at least one of the vertical and horizontal pixels conductive or non-conductive, The first energy storage unit comprises a first energy storage element that is in a conductive or non-conductive state, The aforementioned plurality of pixels are arranged in a matrix, The first element is a solid-state image sensor that either makes the connection between adjacent photoelectric conversion units in a first direction conductive or non-conductive, or makes the connection between adjacent photoelectric conversion units in a second direction different from the first direction conductive or non-conductive .
  2. The solid-state image sensor according to claim 1, wherein the first element and the first energy storage element within the pixel region are set to a first non-conductive state, and the photoelectric conversion of the photoelectric conversion unit is started.
  3. The solid-state image sensor according to claim 2, wherein, after the end of the photoelectric conversion period of the photoelectric conversion unit, the first element, which is in a conductive or non-conductive state with other photoelectric conversion units in the pixel area, is set to a first conductive state.
  4. The solid-state image sensor according to claim 3, wherein the first energy storage element is brought into a second conductive state after being brought into a first conductive state.
  5. The solid-state image sensor according to claim 3, wherein, after the first conductive state is achieved, the first element of the second pixel is made non-conductive, thereby bringing the first energy storage element into a third conductive state.
  6. The solid-state image sensor according to claim 1, wherein the accumulated charge from photoelectric conversion in each pixel region is transferred to the corresponding first energy storage unit via each of the first elements.
  7. The solid-state image sensor according to claim 6, wherein the positive potential of the photoelectric conversion unit on the side receiving the accumulated charge is formed to be greater than the positive potential of the photoelectric conversion unit on the side transferring the accumulated charge.
  8. The photoelectric conversion unit has a photogate, and the magnitude of the positive potential of the photoelectric conversion unit is changed by the photogate, as described in claim 7.
  9. The solid-state image sensor according to claim 6, wherein the pixel has a potential adjustment element connected between the photoelectric conversion unit and the first element, and the accumulated charge is transferred by the potential adjustment element and the first element.
  10. The solid-state image sensor according to claim 2, wherein the photoelectric conversion period of the photoelectric conversion unit is controlled according to the weight values of the calculation processing.
  11. The aforementioned pixel further includes a second element that discharges the accumulated charge of the photoelectric conversion unit, The solid-state image sensor according to claim 10, wherein the non-discharge period of the accumulated charge by the second element is controlled according to the weight value.
  12. The solid-state image sensor according to claim 1, wherein the pixel region is changeable relative to the corresponding first energy storage unit.
  13. The solid-state image sensor according to claim 12, wherein the range of the pixel area relative to the first energy storage unit is changed according to the calculation range of the calculation process.
  14. The solid-state image sensor according to claim 1 , wherein the first element is a transfer transistor, one end of which is connected to the photoelectric conversion unit, and which is set to a conductive or non-conductive state by a positive voltage control signal.
  15. The solid-state image sensor according to claim 1, wherein the photoelectric conversion unit and the first element are formed in different layers.
  16. The first energy storage unit is a floating diffusion unit, as described in claim 1.
  17. A third element electrically connected to a predetermined first element within the pixel region, A fourth element electrically connected to the first energy storage unit, A fifth element electrically connected to the third element, The solid-state image sensor according to claim 11 , further comprising a sixth element for resetting the charge stored in the first energy storage unit.
  18. A second storage unit that stores the accumulated charge from photoelectric conversion for each pixel region, A seventh element electrically connects the first energy storage unit and the second energy storage unit, The solid-state image sensor according to claim 17 , further comprising the above.
  19. An analog-to-digital conversion unit is electrically connected to the fifth element and converts the accumulated charge by photoelectric conversion for each pixel region into digital data, The solid-state image sensor according to claim 18 , further comprising:
  20. Each of the pixels constituting the aforementioned pixel region receives light through one of a plurality of color filters. The solid-state image sensor according to claim 19, wherein, before transferring the stored charge corresponding to a predetermined color filter among the plurality of color filters to the first energy storage unit, stored charges corresponding to other color filters among the plurality of color filters are discharged.

Description

This disclosure relates to a solid-state image sensor and an imaging device. Image data captured by a solid-state image sensor is typically processed by an external device attached to the image sensor. However, if basic image processing operations, such as convolution, are performed on the image sensor itself, the interaction with external devices becomes faster, improving user convenience. Patent Application No. 2019-519793 A block diagram showing one example configuration of the imaging device in an embodiment of this technology.A diagram showing an example of a stacked structure for a solid-state image sensor.A block diagram showing an example configuration of a solid-state image sensor.A schematic diagram showing pixels arranged in a matrix in the pixel array.A diagram showing one example configuration of the reading unit.A diagram showing an example of the pixel array configuration.A diagram showing the structure of pixels.A circuit diagram showing an example of a pixel circuit configuration.Figure 6 is a plan view of the light-receiving chip in the pixel array section, seen from the back.Plan view of the pixel circuit in the detection chip.A schematic diagram showing a cross-section of the main part of the pixel array.A schematic diagram showing the state when charge accumulation in the photoelectric conversion section is complete.A schematic diagram showing the state when the switching elements are connected.A schematic diagram showing the state before charge transfer to floating diffusion.A diagram showing the addition range for each timing and the corresponding floating diffusion.A diagram showing the addition range for each timing.Figure 14 shows the addition range for each different timing.(1) A diagram showing an example of 3x3 weight values in equation (1).A timing chart showing an example of processing within the addition range at timing t1 in Figure 13.A timing chart showing an example of processing in addition range 1 at timing t5 in Figure 14.A circuit diagram showing an example of the configuration of a pixel circuit according to a modified version of the first embodiment.A diagram showing an example configuration of the pixel array section according to the second embodiment.A timing chart showing an example of addition processing in the pixel array section of Figure 20.A plan view of the detection chip in the pixel array section shown in Figure 20.A schematic diagram illustrating an example of transferring the accumulated charge from each pixel to floating diffusion.A diagram showing an example configuration of the pixel array section according to the third embodiment.A diagram showing an example of the pixel configuration according to the third embodiment.A diagram showing the state of charge accumulation.A schematic diagram showing the case when the switching element is in a conductive state.A schematic diagram showing the case when the switching element is in a non-conductive state.A timing chart showing an example of processing within the addition range at timing t1 in Figure 13.A timing chart showing an example of processing within the addition range at timing t5 in Figure 14.A schematic diagram illustrating the charge transfer operation of the adjacent photoelectric conversion section.A schematic diagram showing the case when the switching element is in a conductive state.A schematic diagram showing the case when the switching element is in a non-conductive state.A schematic diagram illustrating the charge transfer operation of the adjacent photoelectric conversion section.A schematic diagram showing the case when the switching element is in a conductive state.A schematic diagram showing the case when the switching element is in a non-conductive state.A schematic diagram showing the case when the switching element is in a non-conductive state.A diagram showing an example configuration of the pixel array section according to the fourth embodiment.A timing chart showing an example of addition processing in the pixel array section of Figure 31.A schematic diagram showing an example of processing the weight values of equation (1) according to the fourth embodiment. The following description will focus on the main components of the imaging sensor and imaging device, but the solid-state image sensor and imaging device may have components and functions not shown or described. The following description does not exclude any components or functions not shown or described. (First Embodiment) Figure 1 is a block diagram showing one example configuration of an imaging device 100 in an embodiment of this technology. This imaging device 100 comprises an imaging lens 110, a solid-state image sensor 200, a recording unit 120, a control unit 130, an analysis unit 140, a communication unit 150, and a speaker unit 160. The imaging device 100 is, for example, a smartphone, a mobile phone, or a PC (Personal Computer). The imaging lens 110 collects incident light and guides it to the solid-state image sen