JP-7855751-B2 - Semiconductor equipment

JP7855751B2JP 7855751 B2JP7855751 B2JP 7855751B2JP-7855751-B2

Inventors

小林由幸
松林大介

Assignees

株式会社半導体エネルギー研究所

Dates

Publication Date: 20260508
Application Date: 20250306
Priority Date: 20140116

Claims (2)

A first conductive layer having the function of the first gate electrode of a transistor, A first insulating layer having a region located above the first conductive layer, An oxide semiconductor layer having a region located above the first conductive layer via the first insulating layer and having a channel formation region for the transistor, A second conductive layer having a region in contact with the upper surface of the oxide semiconductor layer and functioning as one of the source electrode and drain electrode of the transistor, A third conductive layer having a region in contact with the upper surface of the oxide semiconductor layer and functioning as the other of the source electrode and drain electrode of the transistor, A second insulating layer having a region located above the oxide semiconductor layer, The device comprises a fourth conductive layer having a region that overlaps with the oxide semiconductor layer via the second insulating layer and functioning as the second gate electrode of the transistor, One end of the oxide semiconductor layer in the channel length direction overlaps with the second conductive layer, and the other end of the oxide semiconductor layer in the channel length direction overlaps with the third conductive layer. The oxide semiconductor layer has a first region that overlaps with the second conductive layer and does not overlap with the first conductive layer , the third conductive layer , and the fourth conductive layer ; a second region that does not overlap with the first conductive layer, the second conductive layer, the third conductive layer, and the fourth conductive layer; a third region that overlaps with the first conductive layer and does not overlap with the second conductive layer, the third conductive layer, and the fourth conductive layer; and a fourth region that overlaps with the first conductive layer and the fourth conductive layer. In a plan view of the transistor, the first region is connected to the fourth region via the second region and the third region in that order. In a plan view of the transistor, the second conductive layer does not have a region that overlaps with the first conductive layer, nor does it have a region that overlaps with the fourth conductive layer. In a plan view of the transistor, the third conductive layer has a region that overlaps with the fourth conductive layer. A semiconductor device wherein at least a portion of the edge of the second insulating layer overlaps the oxide semiconductor layer.
A first conductive layer having the function of the first gate electrode of a transistor, A first insulating layer having a region located above the first conductive layer, An oxide semiconductor layer having a region located above the first conductive layer via the first insulating layer and having a channel formation region for the transistor, A second conductive layer having a region in contact with the upper surface of the oxide semiconductor layer and functioning as one of the source electrode and drain electrode of the transistor, A third conductive layer having a region in contact with the upper surface of the oxide semiconductor layer and functioning as the other of the source electrode and drain electrode of the transistor, A second insulating layer having a region located above the oxide semiconductor layer, The device comprises a fourth conductive layer having a region that overlaps with the oxide semiconductor layer via the second insulating layer and functioning as the second gate electrode of the transistor, One end of the oxide semiconductor layer in the channel length direction overlaps with the second conductive layer, and the other end of the oxide semiconductor layer in the channel length direction overlaps with the third conductive layer. The oxide semiconductor layer has a first region that overlaps with the second conductive layer and does not overlap with the first conductive layer, the third conductive layer , and the fourth conductive layer ; a second region that does not overlap with the first conductive layer, the second conductive layer, the third conductive layer, and the fourth conductive layer; a third region that overlaps with the first conductive layer and does not overlap with the second conductive layer, the third conductive layer, and the fourth conductive layer; and a fourth region that overlaps with the first conductive layer and the fourth conductive layer. In a plan view of the transistor, the first region is connected to the fourth region via the second region and the third region in that order. In a plan view of the transistor, the second conductive layer does not have a region that overlaps with the first conductive layer, nor does it have a region that overlaps with the fourth conductive layer. In a plan view of the transistor, the third conductive layer has a region that overlaps with the fourth conductive layer. At least a portion of the edge of the second insulating layer overlaps the oxide semiconductor layer, The width of the second conductive layer in the channel width direction of the transistor is greater than the width of the oxide semiconductor layer in the channel width direction of the transistor. A semiconductor device wherein the width of the third conductive layer in the channel width direction of the transistor is greater than the width of the oxide semiconductor layer in the channel width direction of the transistor.

Description

The present invention relates to a product, a method, or a method of production; or to a process, a machine, a manufacture, or a composition of matter. In particular, The present invention relates, for example, to semiconductors, semiconductor devices, display devices, light-emitting devices, lighting devices, energy storage devices, memory devices or processors. Or, semiconductors, semiconductor devices, display devices, light-emitting devices, This invention relates to a method for manufacturing lighting devices, energy storage devices, memory devices, or processors. Or, to a method for driving semiconductor devices, display devices, light-emitting devices, lighting devices, energy storage devices, memory devices, or processors. In this specification, the term "semiconductor device" refers to any device that can function by utilizing semiconductor properties. Display devices, light-emitting devices, lighting devices, electro-optical devices, semiconductor circuits, and electronic devices may include semiconductor devices. A technology that constructs transistors using semiconductors on substrates with insulating surfaces is attracting attention. These transistors are widely applied in semiconductor devices such as integrated circuits and display devices. Silicon is known as a semiconductor that can be applied to transistors. The silicon used in transistor semiconductors is selected based on its application, including amorphous silicon, polycrystalline silicon, and monocrystalline silicon. For example, when applied to transistors that constitute large display devices, amorphous silicon, for which film deposition technology on large-area substrates has been established, is preferable. On the other hand, when applied to transistors that constitute high-performance display devices in which the drive circuit and pixel circuit are formed on the same substrate, polycrystalline silicon, which can be used to fabricate transistors with high field-effect mobility, is preferable. Furthermore, when applied to transistors that constitute integrated circuits, monocrystalline silicon, which has even higher field-effect mobility, is preferable. Polycrystalline silicon is known to be formed by heat treatment at high temperatures or laser treatment of amorphous silicon. Furthermore, oxide semiconductors have been attracting attention in recent years. Because oxide semiconductors can be deposited using methods such as sputtering, they can be used as semiconductors for transistors that make up large display devices. In addition, transistors using oxide semiconductors have high field-effect mobility, enabling the realization of high-performance display devices in which the drive circuit and pixel circuit are formed on the same substrate. Moreover, since it is possible to modify and utilize some of the production equipment for transistors using amorphous silicon, there is also the advantage of being able to reduce capital investment. Incidentally, transistors using oxide semiconductors are known to have extremely low leakage current in the non-conductive state. For example, low-power CPUs that utilize the leakage characteristics of transistors using oxide semiconductors have been disclosed (see Patent Document 1). Thus, when applying transistors using oxide semiconductors to integrated circuits such as CPUs, it is preferable to reduce the size of the transistors and increase their integration. As semiconductor devices become more highly integrated, the effects of parasitic capacitance formed due to the overlapping of wiring and electrodes can become significant. Patent Document 2 discloses that a transistor with excellent electrical characteristics can be obtained even when an offset region is present by injecting electrons into the semiconductor from a conductive electrode. By using the technology disclosed in Patent Document 2, it is possible to reduce parasitic capacitance formed due to the overlapping of wiring and electrodes. Furthermore, it has been disclosed that a transistor with high field-effect mobility can be obtained by constructing a well-type potential with an active layer made of semiconductor material (see Patent Document 3). Japanese Patent Publication No. 2012-257187Japanese Patent Publication No. 2011-22507Japanese Patent Publication No. 2012-59860 A top view and a cross-sectional view showing a transistor according to one aspect of the present invention.A top view and a cross-sectional view showing a transistor according to one aspect of the present invention.A top view and a cross-sectional view showing a transistor according to one aspect of the present invention.A figure showing the calculation results of the electrical characteristics of a transistor according to one aspect of the present invention.A figure showing the calculation results of the electrical characteristics of a transistor according to one aspect of the present invention.A figure showing the calculation results of the electrical character