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JP-7855757-B2 - display device

JP7855757B2JP 7855757 B2JP7855757 B2JP 7855757B2JP-7855757-B2

Inventors

  • 山崎 舜平
  • 片山 雅博
  • 三澤 千恵子
  • 横山 由佳
  • 高橋 寛暢
  • 岡崎 健一

Assignees

  • 株式会社半導体エネルギー研究所

Dates

Publication Date
20260508
Application Date
20250324
Priority Date
20131202

Claims (5)

  1. The pixel has a transistor, a capacitive element, and a display element. The source or drain of the transistor is electrically connected to the first electrode of the display element. The source or drain of the transistor is electrically connected to one electrode of the capacitive element, in a display device, A first conductive film having a region positioned above the insulating surface and functioning as the gate electrode of the transistor, A first insulating film having a region positioned above the first conductive film and functioning as a gate insulating film of the transistor, An oxide semiconductor film having a region positioned above the first insulating film and having the channel region of the transistor, A second conductive film having a region positioned above the first insulating film, functioning as the other electrode of the capacitive element, and being light-transmitting, A second insulating film having a region positioned above the oxide semiconductor film and a region positioned above the second conductive film, and containing silicon oxide, A third conductive film is electrically connected to the oxide semiconductor film and to the first electrode, A fourth conductive film having a region that is electrically connected to the oxide semiconductor film and functions as a first wiring that is electrically connected to the other of the source or drain of the transistor, and that extends in a first direction across the pixel and adjacent pixels, A fifth conductive film having a region that is electrically connected to the second conductive film, functions as a second wiring that supplies potential to the second conductive film, and extends in the first direction across the pixel and adjacent pixels, A third insulating film having a region positioned above the second conductive film, a region positioned above the third conductive film, and a region positioned above the fourth conductive film, The display element has a second electrode having a region positioned above the first electrode, The first electrode has a region positioned above the third insulating film, The second conductive film has a first region that does not overlap with the fifth conductive film and does not overlap with the second insulating film. The upper surface of the first region has a region in contact with the third insulating film, The fifth conductive film does not overlap with the fourth conductive film. Display device.
  2. The pixel has a transistor, a capacitive element, and a display element. The source or drain of the transistor is electrically connected to the first electrode of the display element. The source or drain of the transistor is electrically connected to one electrode of the capacitive element, in a display device, A first conductive film having a region positioned above the insulating surface and functioning as the gate electrode of the transistor, A first insulating film having a region positioned above the first conductive film and functioning as a gate insulating film of the transistor, An oxide semiconductor film having a region positioned above the first insulating film and having the channel region of the transistor, A second conductive film having a region positioned above the first insulating film, functioning as the other electrode of the capacitive element, and being light-transmitting, A second insulating film having a region positioned above the oxide semiconductor film and a region positioned above the second conductive film, and containing silicon oxide, A third conductive film is electrically connected to the oxide semiconductor film and to the first electrode, A fourth conductive film having a region that is electrically connected to the oxide semiconductor film and functions as a first wiring that is electrically connected to the other of the source or drain of the transistor, and that extends in a first direction across the pixel and adjacent pixels, A fifth conductive film having a region that is electrically connected to the second conductive film, functions as a second wiring that supplies potential to the second conductive film, and extends in the first direction across the pixel and adjacent pixels, A third insulating film having a region positioned above the second conductive film, a region positioned above the third conductive film, and a region positioned above the fourth conductive film, The display element has a second electrode having a region positioned above the first electrode, The first electrode has a region positioned above the third insulating film, The second conductive film has a first region that does not overlap with the fifth conductive film and does not overlap with the second insulating film. The upper surface of the first region has a region in contact with the third insulating film, The fifth conductive film does not overlap with the fourth conductive film. The second conductive film does not overlap with the third conductive film. Display device.
  3. The pixel has a transistor, a capacitive element, and a display element. The source or drain of the transistor is electrically connected to the first electrode of the display element. The source or drain of the transistor is electrically connected to one electrode of the capacitive element, in a display device, A first conductive film having a region positioned above the insulating surface and functioning as the gate electrode of the transistor, A first insulating film having a region positioned above the first conductive film and functioning as a gate insulating film of the transistor, An oxide semiconductor film having a region positioned above the first insulating film and having the channel region of the transistor, A second conductive film having a region positioned above the first insulating film, functioning as the other electrode of the capacitive element, and being light-transmitting, A second insulating film having a region positioned above the oxide semiconductor film and a region positioned above the second conductive film, and containing silicon oxide, A third conductive film is electrically connected to the oxide semiconductor film and to the first electrode, A fourth conductive film having a region that is electrically connected to the oxide semiconductor film and functions as a first wiring that is electrically connected to the other of the source or drain of the transistor, and that extends in a first direction across the pixel and adjacent pixels, A fifth conductive film having a region that is electrically connected to the second conductive film, functions as a second wiring that supplies potential to the second conductive film, and extends in the first direction across the pixel and adjacent pixels, A third insulating film having a region positioned above the second conductive film, a region positioned above the third conductive film, and a region positioned above the fourth conductive film, The display element has a second electrode having a region positioned above the first electrode, The first electrode has a region positioned above the third insulating film, The second conductive film has a first region that does not overlap with the fifth conductive film and does not overlap with the second insulating film. The upper surface of the first region has a region in contact with the third insulating film, The fifth conductive film does not overlap with the fourth conductive film. The second conductive film does not overlap with the fourth conductive film. Display device.
  4. The pixel has a transistor, a capacitive element, and a display element. The source or drain of the transistor is electrically connected to the first electrode of the display element. The source or drain of the transistor is electrically connected to one electrode of the capacitive element, in a display device, A first conductive film having a region positioned above the insulating surface and functioning as the gate electrode of the transistor, A first insulating film having a region positioned above the first conductive film and functioning as a gate insulating film of the transistor, An oxide semiconductor film having a region positioned above the first insulating film and having the channel region of the transistor, A second conductive film having a region positioned above the first insulating film, functioning as the other electrode of the capacitive element, and being light-transmitting, A second insulating film having a region positioned above the oxide semiconductor film and a region positioned above the second conductive film, and containing silicon oxide, A third conductive film is electrically connected to the oxide semiconductor film and to the first electrode, A fourth conductive film having a region that is electrically connected to the oxide semiconductor film and functions as a first wiring that is electrically connected to the other of the source or drain of the transistor, and that extends in a first direction across the pixel and adjacent pixels, A fifth conductive film having a region that is electrically connected to the second conductive film, functions as a second wiring that supplies potential to the second conductive film, and extends in the first direction across the pixel and adjacent pixels, A third insulating film having a region positioned above the second conductive film, a region positioned above the third conductive film, and a region positioned above the fourth conductive film, The display element has a second electrode having a region positioned above the first electrode, The first electrode has a region positioned above the third insulating film, The second conductive film has a first region that does not overlap with the fifth conductive film and does not overlap with the second insulating film. The upper surface of the first region has a region in contact with the third insulating film, The fifth conductive film does not overlap with the fourth conductive film. The second conductive film does not overlap with the third conductive film. The second conductive film does not overlap with the fourth conductive film. Display device.
  5. In any one of claims 1 to 4, The oxide semiconductor film comprises In, Ga, and Zn. Display device.

Description

The present invention relates to a product, a method, or a method of manufacture; or to a process, a machine, a manufacture, or a composition of matter. In particular, one aspect of the present invention relates to a semiconductor device, a display device, a light-emitting device, a memory device, or a method of driving them. Or, the present invention relates to a method for manufacturing them. In particular, one aspect of the present invention relates to a semiconductor device, a display device, This invention relates to a light-emitting device, an energy storage device, a memory device, a method for driving them, or a method for manufacturing them. Metal oxides exhibiting semiconductor properties, known as oxide semiconductors, are attracting attention. Metal oxides are used in a variety of applications; for example, indium oxide, a well-known metal oxide, is used in translucent pixel electrodes in liquid crystal displays and light-emitting devices. Examples of metal oxides exhibiting semiconductor properties include tungsten oxide, tin oxide, and indium oxide. Examples include zinc oxide, and transistors that use metal oxides exhibiting such semiconductor properties in the channel formation region are already known (Patent Documents 1 and 2). Japanese Patent Publication No. 2007-123861Japanese Patent Publication No. 2007-96055 A diagram showing the configuration of a transistor.A diagram showing the configuration of a transistor.A diagram showing the configuration of a transistor.A diagram showing the configuration of a transistor.Top view of a pixel.Cross-sectional view of a pixel.A diagram showing the configuration of a display device.A diagram showing a cross-section of a transistor and the connection configuration between conductive films.A diagram showing a cross-sectional view of a pixel, a cross-section of a transistor, and the connection configuration between conductive films.A diagram illustrating the method for fabricating a semiconductor device.A diagram illustrating the method for fabricating a semiconductor device.A diagram illustrating the method for fabricating a semiconductor device.A diagram illustrating the method for fabricating a semiconductor device.A diagram illustrating the method for fabricating a semiconductor device.A diagram illustrating the method for fabricating a semiconductor device.A diagram illustrating the method for fabricating a semiconductor device.A diagram illustrating the method for fabricating a semiconductor device.A diagram showing the configuration of a sequential circuit.A schematic diagram illustrating the configuration of a sequential circuit.A diagram showing the configuration of a shift register.A cross-sectional diagram illustrating the method for manufacturing a display device.A cross-sectional diagram illustrating the method for manufacturing a display device.A cross-sectional diagram illustrating the method for manufacturing a display device.Cs-corrected high-resolution TEM image in the cross-section of CAAC-OS, and schematic cross-sectional diagram of CAAC-OS.High-resolution TEM image with Cs correction in the plane of CAAC-OS.A diagram illustrating the XRD structural analysis of CAAC-OS and single-crystal oxide semiconductors.A diagram showing the electron diffraction pattern of CAAC-OS.A diagram showing the changes in the crystalline structure of In-Ga-Zn oxide due to electron irradiation.A schematic diagram illustrating the film deposition models for CAAC-OS and nc-OS.A diagram illustrating the crystal and pellet of InGaNO4 .A schematic diagram illustrating the film deposition model of CAAC-OS.Top view of a liquid crystal display device.Cross-sectional view of a liquid crystal display device.A diagram of an electronic device.This figure shows the results of measuring the drain current ID(A) value for a transistor with respect to the gate voltage VG(V).A diagram showing the transmittance values of metal oxide films against wavelength.A photograph showing an image displayed on a prototype liquid crystal display device. Embodiments of the present invention will be described in detail below with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the embodiments described below. In a transistor, the source refers to the source region, which is part of the semiconductor film that functions as the active layer, or the source electrode connected to the semiconductor film. Similarly, the drain refers to the drain region, which is part of the semiconductor film, or the drain electrode connected to the semiconductor film. The gate refers to the gate electrode. <Transistor Configuration Example 1> Figure 1 shows a specific configuration examp