JP-7855763-B2 - Semiconductor equipment

Inventors

• 山崎 舜平
• 駒形 大樹
• 小松 良寛
• 笹川 慎也
• 浜田 崇
• 山根 靖正
• 水上 翔太

Assignees

• 株式会社半導体エネルギー研究所

Dates

Publication Date

20260508

Application Date

20250507

Priority Date

20191108

Claims (1)

1. The substrate has a first circuit region , a second circuit region , and a third insulator . The first circuit region is, It comprises a plurality of first transistors and a first insulator located above the plurality of first transistors , The second circuit region described above is It comprises a plurality of second transistors and a second insulator located above the plurality of second transistors , The second insulator has an opening, The first transistor and the second transistor each have an oxide semiconductor, The oxide semiconductor of the first transistor has a film thickness in the region overlapping with the gate electrode of the first transistor that is smaller than the film thickness in the region overlapping with the source electrode or drain electrode of the first transistor. The third insulator has a region in contact with the upper surface of the first insulator and a region in contact with the upper surface of the second insulator. A semiconductor device wherein the arrangement density of the plurality of first transistors in the first circuit region is higher than the arrangement density of the plurality of second transistors in the second circuit region.

Description

One aspect of the present invention relates to a transistor, a semiconductor device, and electronic equipment. Another aspect of the present invention relates to a method for manufacturing a semiconductor device. Furthermore, another aspect of the present invention relates to a semiconductor wafer and a module. In this specification, the term "semiconductor device" refers to any device that can function by utilizing semiconductor properties. Semiconductor elements such as transistors, as well as semiconductor circuits, computing devices, and memory devices, are all forms of semiconductor devices. Display devices (such as liquid crystal displays and light-emitting displays), projection devices, lighting devices, electro-optical devices, energy storage devices, memory devices, semiconductor circuits, imaging devices, and electronic devices may also be considered to have semiconductor devices. Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. One aspect of the invention disclosed herein relates to a product, method, or method of manufacture. Another aspect of the present invention relates to a process, machine, manufacture, or composition of matter. In recent years, the development of semiconductor devices has progressed, with LSIs, CPUs, and memory being the main components. A CPU is an assembly of semiconductor elements that have semiconductor integrated circuits (at least transistors and memory) separated from a semiconductor wafer, and for which electrodes, which serve as connection terminals, are formed. Semiconductor circuits (IC chips) such as LSIs, CPUs, and memory are mounted on circuit boards, such as printed circuit boards, and used as components in various electronic devices. Furthermore, the technology of constructing transistors using semiconductor thin films formed on substrates with insulating surfaces is attracting attention. These transistors are widely applied in electronic devices such as integrated circuits (ICs) and image display devices (also simply referred to as display devices). While silicon-based semiconductor materials are widely known as semiconductor thin films applicable to transistors, oxide semiconductors are also attracting attention as other materials. Furthermore, transistors using oxide semiconductors are known to have extremely low leakage current in the non-conductive state. For example, low-power CPUs that utilize the low leakage current characteristic of oxide semiconductor transistors have been disclosed (see Patent Document 1). Also, for example, memory devices that can retain data over long periods of time by utilizing the low leakage current characteristic of oxide semiconductor transistors have been disclosed (see Patent Document 2). Furthermore, in recent years, with the miniaturization and weight reduction of electronic devices, there has been an increasing demand for even higher density integrated circuits. There is also a need to improve the productivity of semiconductor devices, including integrated circuits. Japanese Patent Publication No. 2012-257187Japanese Patent Publication No. 2011-151383 Figure 1 is a top view of a semiconductor device according to one embodiment of the present invention.Figures 2A to 2C are top views of a semiconductor device according to one embodiment of the present invention.Figure 3A is a top view of a semiconductor device according to one embodiment of the present invention. Figures 3B and 3C are cross-sectional views of a semiconductor device according to one embodiment of the present invention.Figure 4A is a top view of a semiconductor device according to one embodiment of the present invention. Figures 4B to 4D are cross-sectional views of a semiconductor device according to one embodiment of the present invention.Figure 5 is a cross-sectional view of a semiconductor device according to one aspect of the present invention.Figure 6A illustrates the classification of IGZO crystal structures. Figure 6B illustrates the XRD spectrum of a CAAC-IGZO film. Figure 6C illustrates the micro-electron diffraction pattern of a CAAC-IGZO film.Figure 7A is a top view showing a method for manufacturing a semiconductor device according to one aspect of the present invention. Figures 7B to 7D are cross-sectional views showing a method for manufacturing a semiconductor device according to one aspect of the present invention.Figure 8A is a top view showing a method for manufacturing a semiconductor device according to one aspect of the present invention. Figures 8B to 8D are cross-sectional views showing a method for manufacturing a semiconductor device according to one aspect of the present invention.Figure 9A is a top view showing a method for manufacturing a semiconductor device according to one aspect of the present invention. Figures 9B to 9D are cross-sectional views showing a method for manufacturing a semiconductor device according to one aspect of the present invention.Figure 10A is a