JP-7855764-B2 - display device

Inventors

• 山崎 舜平
• 三宅 博之
• 宍戸 英明
• 小山 潤

Assignees

• 株式会社半導体エネルギー研究所

Dates

Publication Date

20260508

Application Date

20250509

Priority Date

20120913

Claims (5)

1. A display device having a transistor and a pixel electrode in each pixel, A first conductive film having a region positioned above the insulating surface and functioning as the gate of the transistor, A second conductive film having a region positioned above the insulating surface and functioning as a first wiring, A first insulating film having a region positioned above the first conductive film and a region positioned above the second conductive film, A first metal oxide film having a region positioned above the first insulating film and having a channel formation region for the transistor, A second metal oxide film having a region positioned above the first insulating film, A third conductive film having a region positioned above the first metal oxide film, functioning as either the source or drain of the transistor, and functioning as a second wiring, A fourth conductive film having a region positioned above the first metal oxide film and functioning as the other of the source or drain of the transistor, A fifth conductive film having a region positioned above the second metal oxide film and having the function of electrically connecting the second metal oxide film and the second conductive film, A second insulating film having a region positioned above the first metal oxide film and a region positioned above the second metal oxide film, A third insulating film having a region positioned above the second insulating film, The pixel electrode has a region positioned above the third insulating film and is electrically connected to the fourth conductive film, The second conductive film described above extends across the pixel and adjacent pixels. The third conductive film described above intersects with the second conductive film described above. The pixel electrode has a region that overlaps with the second metal oxide film, without the second insulating film, and via the third insulating film. Display device.
2. A display device having a transistor and a pixel electrode in each pixel, A first conductive film having a region positioned above the insulating surface and functioning as the gate of the transistor, A second conductive film having a region positioned above the insulating surface and functioning as a first wiring, A first insulating film having a region positioned above the first conductive film and a region positioned above the second conductive film, A first metal oxide film having a region positioned above the first insulating film and having a channel formation region for the transistor, A second metal oxide film having a region positioned above the first insulating film, A third conductive film having a region positioned above the first metal oxide film, functioning as either the source or drain of the transistor, and functioning as a second wiring, A fourth conductive film having a region positioned above the first metal oxide film and functioning as the other of the source or drain of the transistor, A fifth conductive film having a region positioned above the second metal oxide film and having the function of electrically connecting the second metal oxide film and the second conductive film, A second insulating film having a region positioned above the first metal oxide film and a region positioned above the second metal oxide film, A third insulating film having a region positioned above the second insulating film, The pixel electrode has a region positioned above the third insulating film and is electrically connected to the fourth conductive film, The second conductive film described above extends across the pixel and adjacent pixels. The third conductive film described above intersects with the second conductive film described above. The second insulating film and the third insulating film have regions that overlap with the channel formation region of the transistor. The pixel electrode has a region that overlaps with the second metal oxide film, without the second insulating film, and via the third insulating film. Display device.
3. A display device having a transistor and a pixel electrode in each pixel, A first conductive film having a region positioned above the insulating surface and functioning as the gate of the transistor, A second conductive film having a region positioned above the insulating surface and functioning as a first wiring, A first insulating film having a region positioned above the first conductive film and a region positioned above the second conductive film, A first metal oxide film having a region positioned above the first insulating film and having a channel formation region for the transistor, A second metal oxide film having a region positioned above the first insulating film, A third conductive film having a region positioned above the first metal oxide film, functioning as either the source or drain of the transistor, and functioning as a second wiring, A fourth conductive film having a region positioned above the first metal oxide film and functioning as the other of the source or drain of the transistor, A fifth conductive film having a region positioned above the second metal oxide film and having the function of electrically connecting the second metal oxide film and the second conductive film, A second insulating film having a region positioned above the first metal oxide film and a region positioned above the second metal oxide film, A third insulating film having a region positioned above the second insulating film, The pixel electrode has a region positioned above the third insulating film and is electrically connected to the fourth conductive film, The second conductive film described above extends across the pixel and adjacent pixels. The third conductive film described above intersects with the second conductive film described above. The aforementioned pixel electrode functions as one of the electrodes of an organic EL element. The pixel electrode has a region that overlaps with the second metal oxide film, without the second insulating film, and via the third insulating film. Display device.
4. A display device having a transistor and a pixel electrode in each pixel, A first conductive film having a region positioned above the insulating surface and functioning as the gate of the transistor, A second conductive film having a region positioned above the insulating surface and functioning as a first wiring, A first insulating film having a region positioned above the first conductive film and a region positioned above the second conductive film, A first metal oxide film having a region positioned above the first insulating film and having a channel formation region for the transistor, A second metal oxide film having a region positioned above the first insulating film, A third conductive film having a region positioned above the first metal oxide film, functioning as either the source or drain of the transistor, and functioning as a second wiring, A fourth conductive film having a region positioned above the first metal oxide film and functioning as the other of the source or drain of the transistor, A fifth conductive film having a region positioned above the second metal oxide film and having the function of electrically connecting the second metal oxide film and the second conductive film, A second insulating film having a region positioned above the first metal oxide film and a region positioned above the second metal oxide film, A third insulating film having a region positioned above the second insulating film, The pixel electrode has a region positioned above the third insulating film and is electrically connected to the fourth conductive film, The second conductive film described above extends across the pixel and adjacent pixels. The third conductive film described above intersects with the second conductive film described above. The second insulating film and the third insulating film have regions that overlap with the channel formation region of the transistor. The aforementioned pixel electrode functions as one of the electrodes of an organic EL element. The pixel electrode has a region that overlaps with the second metal oxide film, without the second insulating film, and via the third insulating film. Display device.
5. In any one of claims 1 to 4, The second metal oxide film functions as one electrode of the capacitive element. The pixel electrode has the function of the other electrode of the capacitive element. Display device.

Description

The inventions disclosed herein relate to semiconductor devices. In recent years, flat panel displays such as liquid crystal displays (LCDs) have become widely popular. In display devices such as flat panel displays, each pixel arranged in the row and column directions is provided with a transistor, which is a switching element, a liquid crystal element electrically connected to the transistor, and a capacitive element connected in parallel to the liquid crystal element. The semiconductor material constituting the semiconductor film of the transistor is amorphous (non-crystalline). Silicon semiconductors, such as silicon or polycrystalline silicon, are widely used. Furthermore, metal oxides exhibiting semiconductor properties (hereinafter referred to as oxide semiconductors) are semiconductor materials that can be applied to the semiconductor film of a transistor. For example, a technique for fabricating a transistor using zinc oxide or an In-Ga-Zn-based oxide semiconductor has been disclosed (see Patent Documents 1 and 2). Furthermore, in order to increase the aperture ratio, a capacitive element has been disclosed in which an oxide semiconductor film provided on the same surface as the oxide semiconductor film of the transistor and a pixel electrode connected to the transistor are provided at a predetermined distance apart (see Patent Document 3). Japanese Patent Publication No. 2007-123861Japanese Patent Publication No. 2007-96055U.S. Patent No. 8,102,476 A diagram illustrating a semiconductor device according to one aspect of the present invention, and a circuit diagram illustrating a pixel.A top view illustrating a semiconductor device according to one aspect of the present invention.A cross-sectional view illustrating a semiconductor device according to one aspect of the present invention.A top view illustrating a semiconductor device according to one aspect of the present invention.A cross-sectional view illustrating a semiconductor device according to one aspect of the present invention.A cross-sectional view illustrating a method for manufacturing a semiconductor device according to one aspect of the present invention.A cross-sectional view illustrating a method for manufacturing a semiconductor device according to one aspect of the present invention.A cross-sectional view illustrating a method for manufacturing a semiconductor device according to one aspect of the present invention.A cross-sectional view illustrating a semiconductor device according to one aspect of the present invention.A cross-sectional view illustrating a semiconductor device according to one aspect of the present invention.A top view illustrating a semiconductor device according to one aspect of the present invention.A top view illustrating a semiconductor device according to one aspect of the present invention.A top view illustrating a semiconductor device according to one aspect of the present invention.A top view illustrating a semiconductor device according to one aspect of the present invention.A cross-sectional view illustrating a semiconductor device according to one aspect of the present invention.A cross-sectional view illustrating a method for manufacturing a semiconductor device according to one aspect of the present invention.A cross-sectional view illustrating a method for manufacturing a semiconductor device according to one aspect of the present invention.A top view illustrating a semiconductor device according to one aspect of the present invention.A cross-sectional view illustrating a semiconductor device according to one aspect of the present invention.A cross-sectional view illustrating a semiconductor device according to one aspect of the present invention.A top view illustrating a semiconductor device according to one aspect of the present invention.A cross-sectional view illustrating a semiconductor device according to one aspect of the present invention.A cross-sectional view and a top view illustrating a semiconductor device according to one aspect of the present invention.A diagram illustrating an electronic device using a semiconductor device according to one aspect of the present invention.A diagram illustrating an electronic device using a semiconductor device according to one aspect of the present invention.This is a diagram illustrating the structure of the sample.This is a diagram illustrating sheet resistance.This is a diagram illustrating the measurement results of SIMS.This is a diagram illustrating the ESR measurement results.This is a diagram illustrating the ESR measurement results.This is a diagram illustrating sheet resistance.This is a diagram illustrating sheet resistance.A diagram illustrating the bulk model of InGaNO₄ crystals.A diagram illustrating the formation energy and thermodynamic transition level of VoH.This diagram illustrates the sample preparation process and the sheet resistance of the sample.This is a diagram illustrating the sample preparation process and its structure.T