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JP-7855784-B2 - Compounds and methods for extreme ultraviolet lithography

JP7855784B2JP 7855784 B2JP7855784 B2JP 7855784B2JP-7855784-B2

Inventors

  • エルメルト， デビット エム．
  • キャメロン， トーマス エム．

Assignees

  • インテグリス・インコーポレーテッド

Dates

Publication Date
20260508
Application Date
20230629
Priority Date
20220701

Claims (5)

  1. [In the above formula, each R2 is independently hydrogen, a C1 - C4 alkyl group , or a C1 -C4 alkyl group containing at least one halide, ( In the above formula, R3 to R7 are hydrogen or C1 to C4 alkyl groups .) A cyclopentadienylidotin(II) compound of formula (I) containing .
  2. Equation (I): [In the above formula, each R2 is independently hydrogen, a C1 - C4 alkyl group , or a C1 -C4 alkyl group containing at least one halide, ( In the above formula, R3 to R7 are hydrogen or C1 to C4 alkyl groups .) A method for forming a cyclopentadienylidotin(II) compound, [Sn(N( R2 ) 2 ) 2 ] 2 includes contacting Cp2Sn or CpH, method.
  3. The method according to claim 2, wherein [Sn(N( R2 ) 2 ) 2 ] 2 is dissolved in tetrahydrofuran before the contact step.
  4. Formula (II): [In the above formula, each R1 is independently hydrogen, a C1 - C4 alkyl group , or a C1 -C4 alkyl group containing at least one halide, ( In the above formula, R3 to R7 are hydrogen or C1 to C4 alkyl groups .) A cyclopentadienylidotin(II) compound.
  5. Formula (II): [In the above formula, each R1 is independently hydrogen, a C1 - C4 alkyl group , or a C1 -C4 alkyl group containing at least one halide, ( In the above formula, R3 to R7 are hydrogen or C1 to C4 alkyl groups .) A method for forming a cyclopentadienylidotin(II) compound, [Sn(O( R1 )) 2 ] Including contacting 2 with Cp2Sn , method.

Description

This disclosure relates to the field of compounds and methods for extreme ultraviolet (EUV) lithography. Priority Claim: This disclosure claims priority to U.S. Provisional Patent Application No. 63/357,771, titled "COMPOUNDS AND PROCESSES FOR EXTREME ULTRAVIOLET LITHOGRAPHY" and filed 1 July 2023, which is incorporated herein by reference. Extreme ultraviolet lithography is a photolithography technique that uses the extreme ultraviolet wavelength range to generate patterns by exposing a reflective photomask to UV light and reflecting it off a substrate covered with photoresist. This disclosure includes the preparation of mixed ligand compounds, such as tin(II) cyclopentadienylide complexes. The compounds of this disclosure can be used as precursors, for example, as atomic layer deposition (ALD) precursors for EUV lithography or plasma chemical vapor deposition (CVD) precursors. For example, the compounds of this disclosure can be used in EUV hard mask applications. Tin compounds can also be used in other applications, such as polyvinyl chloride (PVC) stabilizers, biocides, precursors for tin(IV) oxide coatings, and catalysts for organic conversion. In some embodiments, this disclosure is, [In the above formula, each R2 is independently hydrogen, C1 to C4 , or a halogen containing C1 to C4 , {In the above equation, R3 to R7 are hydrogen or C1 to C4 }. It contains a cyclopentadienylidotin(II) compound of formula (I) including . In some embodiments, the disclosure includes each R2 being independently a methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, or sec-butyl group. In some embodiments, the present disclosure includes the fact that each R2 is a methyl group. In some embodiments, the disclosure includes each R2 being a C1 - C4 alkyl group. In some embodiments, the disclosure includes the fact that C1 to C4 are branched or unbranched. In some embodiments, the disclosure includes the case where C1 to C4 are substituted or unsubstituted. In some embodiments, the disclosure includes the fact that each R3 to R7 is hydrogen. In some embodiments, the disclosure includes the case where each R2 is hydrogen and each R3 to R7 are hydrogen. In some embodiments, this disclosure is, Equation (I): [In the above formula, each R2 is independently a halogen containing hydrogen, C1 to C4 , or C1 to C4 groups, {In the above equation, R3 to R7 are hydrogen or C1 to C4 }. A method for forming a cyclopentadienylidotin(II) compound, The method includes contacting [Sn(N( R2 ) 2 ) 2 ] 2 with Cp2Sn or CpH. In some embodiments, the disclosure includes dissolving [Sn(N( R2 ) 2 ) 2 ] 2 in tetrahydrofuran before the contact step. In some embodiments, the disclosure includes the fact that R2 is independently a methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, or sec-butyl group. In some embodiments, the disclosure includes dissolving Cp2Sn or CpH in tetrahydrofuran prior to the contact step. In some embodiments, this disclosure, Formula (II): [In the above formula, each R1 is independently hydrogen, C1 to C4 , or a halogenated compound containing C1 to C4 .] {In the above equation, R3 to R7 are hydrogen or C1 to C4 }. It contains a cyclopentadienylidotin(II) compound. In some embodiments, the disclosure includes each R1 being independently a methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, or sec-butyl group. In some embodiments, the present disclosure includes the fact that each R1 is a methyl group. In some embodiments, the disclosure includes each R1 being a C1 - C4 alkyl group. In some embodiments, the disclosure includes the fact that C1 to C4 are branched or unbranched. In some embodiments, the disclosure includes the case where C1 to C4 are substituted or unsubstituted. In some embodiments, the disclosure includes the fact that each R3 to R7 is hydrogen. In some embodiments, the disclosure includes the case where each R1 is hydrogen and each R3 to R7 are hydrogen. In some embodiments, this disclosure is, Formula (II): [In the above formula, each R1 is independently a halogen containing hydrogen, C1 to C4 , or C1 to C4 groups, {In the above equation, R3 to R7 are hydrogen or C1 to C4 }. A method for forming a cyclopentadienylidotin(II) compound, The method includes bringing [Sn(O( R1 )) 2 ] 2 into contact with Cp2Sn . In some embodiments, the disclosure includes dissolving [Sn(O( R1 )) 2 ] 2 in tetrahydrofuran prior to the contact step. In some embodiments, the disclosure includes the fact that R1 is independently a methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, or sec-butyl group. In some embodiments, the disclosure includes dissolving Cp2Sn in tetrahydrofuran prior to the contact step. Some embodiments of this disclosure are described herein merely as examples, with reference to the accompanying drawings. Particularly with reference to the drawings in detail hereof, it is emphasized that the embodiments shown are illustrative and for illustrative purposes only, for the sake of