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JP-7855894-B2 - Gate drive circuit, test apparatus, and switching method

JP7855894B2JP 7855894 B2JP7855894 B2JP 7855894B2JP-7855894-B2

Inventors

  • 滝浪 正義

Assignees

  • 新東工業株式会社

Dates

Publication Date
20260511
Application Date
20220329

Claims (5)

  1. A gate drive circuit used for dynamic characteristic testing of power semiconductors, A voltage source that changes the gate voltage of the gate of the power semiconductor, A plurality of resistor setting circuits connected in parallel to one another between the voltage source and the gate, A switching circuit connects at least one of the plurality of resistor setting circuits to the voltage source and the gate, Equipped with , The switching circuit switches the connection of the multiple resistor setting circuits during one dynamic characteristic test, from the start to the end of the gate signal that repeatedly turns the gate ON and OFF. Gate drive circuit.
  2. The gate drive circuit according to claim 1, wherein the switching circuit includes a semiconductor element that operates in accordance with the switching signal.
  3. A test apparatus used for testing the dynamic characteristics of power semiconductors, A controller that outputs a gate signal that controls the ON/OFF state of the gate of the power semiconductor, A gate drive circuit that applies a gate voltage to the gate in accordance with the gate signal output from the controller, A sensor for measuring the voltage between the collector and emitter of the power semiconductor, Equipped with, The aforementioned gate drive circuit is A voltage source that changes the gate voltage of the gate, A plurality of resistor setting circuits connected in parallel to one another between the voltage source and the gate, A switching circuit connects at least one of the plurality of resistor setting circuits to the voltage source and the gate, It has, The switching circuit switches the connection of the multiple resistor setting circuits during one dynamic characteristic test, from the start to the end of the gate signal, which repeatedly switches the gate ON and OFF. Testing equipment.
  4. The controller outputs a switching signal during one of the dynamic characteristic tests, from the start to the end of the gate signal. The test apparatus according to claim 3, wherein the switching circuit connects at least one resistor setting circuit selected from the plurality of resistor setting circuits in accordance with the switching signal to the voltage source and the gate.
  5. A switching method performed by a controller used in dynamic characteristic testing of power semiconductors, The first step is to output a resistance setting signal, A second step of outputting a gate signal that repeatedly turns the gate of the power semiconductor ON and OFF , A third step involves outputting a resistance switching signal during one of the dynamic characteristic tests from the start to the end of the gate signal , A switching method that includes [a specific feature/feature].

Description

This invention relates to a gate drive circuit, a test apparatus, and a switching method. The power semiconductor test apparatus described in Patent Document 1 is configured such that some of the units used for test measurement are detachable. Depending on the required test measurement items, the necessary units are attached and unnecessary units are removed. Japanese Patent Publication No. 2017-67555 This figure shows the external appearance of the apparatus, including the test apparatus according to this embodiment.This figure shows an example of a circuit diagram of the test apparatus according to this embodiment.This figure shows an example of a signal related to the test apparatus according to this embodiment.This figure shows another example of a signal related to the test apparatus according to this embodiment.This is a flowchart showing the switching process. (This embodiment) This embodiment will be described below with reference to the drawings. In the following description, the same or equivalent elements will be denoted by the same reference numeral, and redundant descriptions will not be repeated. The dimensional ratios in the drawings do not necessarily match those in the description. The terms "top,""bottom,""left," and "right" are based on the illustrated state and are for convenience only. Figure 1 shows the external appearance of the test apparatus 1 according to this embodiment. The test apparatus 1 comprises, for example, a first housing 13, a second housing 14, a third housing 15, and a fourth housing 16. The first housing 13 has a connection portion 11 and a main body portion 12 that connect the power semiconductor 100 to the test apparatus 1. The test apparatus 1 may also consist of a single housing. The connection section 11, for example, has a probe and can connect to power semiconductors of various physical shapes. For example, the main body 12 has the gate drive circuit 3 and sensor 4 described later. For example, the third housing 15 is used for testing the static characteristics of the power semiconductor 100. For example, the second housing 14 has the controller 2 described later. For example, the fourth housing 16 has input devices such as a keyboard and mouse for the user of the test apparatus 1 to set up the test. For example, the fourth enclosure 16 includes a presentation device (e.g., at least one of a speaker, microphone, and display) for performing at least one of setting and confirming the setting. For example, the input device and presentation device are used when the user of the test apparatus 1 sets the resistance value described later. Figure 2 shows an example of a circuit diagram of the test apparatus 1 according to the embodiment. The test apparatus 1 shown in Figure 2 is a device for testing power semiconductors 100. For example, power semiconductors 100 are semiconductors that perform power conversion, such as converting AC to DC or stepping down voltage to 5V or 3V, for control of motors, lighting, or batteries, and refer to semiconductors that handle large voltages or currents. For example, the power semiconductor 100 is an insulated-gate bipolar transistor (IGBT) having an emitter, collector, and gate. The power semiconductor 100 is tested, including static characteristics (DC: Direct Current) testing and dynamic characteristics (AC: Alternating Current) testing. A static characteristics test of the power semiconductor 100 refers to a test in which the voltage applied to the power semiconductor 100 and the current flowing through it remain constant, and are not changed. The dynamic characteristics test of the power semiconductor 100 refers to a test in which the voltage applied to the power semiconductor 100 and the current flowing through it are changed, thereby altering the voltage applied to the power semiconductor 100 and the current flowing through it. For example, as a static characteristic test, the following characteristics of the power semiconductor 100 can be measured: total gate charge, collector cutoff current, gate-emitter threshold voltage, gate-emitter leakage current, and collector-emitter voltage Vce. For instance, the collector-emitter voltage Vce refers to the voltage between the collector and emitter. For example, dynamic characteristic tests are performed on the power semiconductor 100, including turn-on delay time, turn-on rise time, turn-off delay time, turn-off fall time, reverse recovery time, reverse recovery charge, switching measurement, and short-circuit withstand capability measurement. For instance, turn-on refers to the commencement of current flow to the power semiconductor 100, and turn-off refers to the cessation of current flow to the power semiconductor 100. The measurement items for static and dynamic characteristic tests are selected appropriately according to the user's requirements. Below, we will describe, for example, a dynamic characteristic test measuring the collector-emitter voltage Vce of the power semiconduct