Search

JP-7855904-B2 - Drive unit and drive method

JP7855904B2JP 7855904 B2JP7855904 B2JP 7855904B2JP-7855904-B2

Inventors

  • 赤羽 正志

Assignees

  • 富士電機株式会社

Dates

Publication Date
20260511
Application Date
20220411

Claims (8)

  1. A temperature detection circuit that outputs a temperature detection signal corresponding to the temperature of the switching element, A current detection circuit samples a current detection signal corresponding to the main current flowing through the switching element during the ON period of the switching element, The system includes a drive circuit that adjusts the drive current supplied to the control terminal of the switching element according to the temperature detection signal and the current detection signal, The aforementioned drive circuit is In response to the temperature detection signal indicating a lower temperature of the switching element, the drive current is reduced compared to the case where the temperature detection signal indicating a higher temperature of the switching element is used. A drive device that reduces the drive current to a smaller value than the drive current to a larger value in response to the current detection signal indicating that the main current is smaller.
  2. The aforementioned drive circuit is The temperature indicated by the temperature detection signal is classified into one of several temperature ranges. In accordance with the fact that the temperature indicated by the temperature detection signal falls within the first temperature range among the plurality of temperature ranges, the magnitude of the drive current is set to a magnitude corresponding to the first temperature range, regardless of the value of the current detection signal. The drive device according to claim 1, wherein the magnitude of the drive current is adjusted according to the value of the current detection signal, depending on whether the temperature indicated by the temperature detection signal falls within a second temperature range that is lower than the first temperature range among the plurality of temperature ranges.
  3. The drive device according to claim 2, wherein the second temperature range is the temperature range with the lowest temperature among the plurality of temperature ranges, and the first temperature range is the temperature range other than the temperature range with the lowest temperature among the plurality of temperature ranges.
  4. The drive device according to claim 1, wherein the drive circuit sets the magnitude of the drive current to a magnitude corresponding to a combination of a temperature range among a plurality of temperature ranges that includes the temperature indicated by the temperature detection signal, and a current range among a plurality of current ranges that includes the current value indicated by the current detection signal.
  5. The aforementioned drive circuit is A current mirror circuit that outputs the drive current which is an amplified version of the supplied current, A voltage output circuit that outputs a control voltage corresponding to the temperature detection signal and the current detection signal, The drive device according to any one of claims 1 to 4, further comprising a current control circuit that supplies a current corresponding to the control voltage to the current mirror circuit.
  6. The aforementioned drive circuit is A current mirror circuit that outputs the drive current which is an amplified version of the supplied current, The drive device according to any one of claims 1 to 4, further comprising a current control circuit that supplies a current to the current mirror circuit corresponding to the temperature detection signal and the current detection signal.
  7. The aforementioned drive circuit is A current mirror circuit that outputs the drive current which is an amplified version of the supplied current, The drive device according to any one of claims 1 to 4, further comprising: an amplification factor setting circuit that sets the amplification factor of the current mirror circuit in accordance with the temperature detection signal and the current detection signal.
  8. The temperature detection circuit outputs a temperature detection signal corresponding to the temperature of the switching element, The current detection circuit outputs a current detection signal corresponding to the main current flowing through the switching element, The drive circuit includes adjusting the drive current supplied to the control terminal of the switching element according to the temperature detection signal and the current detection signal, The aforementioned drive circuit is In response to the temperature detection signal indicating a lower temperature of the switching element, the drive current is reduced compared to the case where the temperature detection signal indicating a higher temperature of the switching element is used. A driving method that reduces the drive current to a smaller value than the drive current to a larger value in response to a current detection signal indicating a smaller value for the main current.

Description

This invention relates to a drive device and a drive method. Patent Document 1 states, "Instead of continuously detecting the operating temperature of a power semiconductor switching element, the detection is performed at a timing corresponding to a control signal from an external control circuit. By detecting the operating temperature at a predetermined timing, for example, when the power semiconductor switching element is turned off, the influence of switching noise from the power semiconductor switching element is reduced compared to when the operating temperature is detected continuously. Therefore, it becomes possible to change the magnitude of the current driving the power semiconductor switching element by reducing the influence of switching noise from the power semiconductor switching element" (paragraph 0009). Patent Document 2 states, "In summary, the semiconductor device according to this invention updates the threshold for switching the switching speed of an output transistor that drives a load from low speed to high speed according to temperature. When the temperature rises, the threshold is lowered" (paragraph 0023), and "The semiconductor device according to this invention comprises a temperature sensor that detects the operating temperature of a switching element that drives an output load, and a gate control circuit that changes the threshold for switching the switching speed of the switching element according to the detection output of the temperature sensor. This gate control circuit lowers the threshold when the detection output of the temperature sensor indicates a rise in temperature" (paragraph 0024). Patent Document 3 states, "The invention of claim 1 reduces noise generation by increasing the gate resistance when the load current is below a predetermined value, and reduces switching losses and prevents thermal damage by decreasing the gate resistance when the load current exceeds a predetermined value and the element temperature exceeds a predetermined temperature" (paragraph 0018). [Prior art documents] [Patent Documents] [Patent Document 1] Japanese Unexamined Patent Publication No. 2019-110677 [Patent Document 2] Japanese Unexamined Patent Publication No. 2008-182835 [Patent Document 3 ] Japanese Unexamined Patent Publication No. 2003-274672 The configuration of the apparatus 5 according to this embodiment is shown.The configuration of the temperature detection circuit 130 according to this embodiment is shown.This embodiment shows the relationship between the input to the temperature detection circuit 130 and the temperature.The input and output of the temperature detection circuit 130 according to this embodiment are shown.The configuration of the current detection circuit 140 according to this embodiment is shown.The configuration of the voltage output circuit 160 according to this embodiment is shown.The input and output of the voltage output circuit 160 according to this embodiment are shown.The configuration of the switching circuit 170 according to this embodiment is shown.This embodiment demonstrates the noise reduction effect of the device 5 in the low-current region.This embodiment demonstrates the loss reduction effect of the device 5 in the medium and high current range.This shows the switching speed of the device 5 according to the temperature according to this embodiment.This embodiment demonstrates the loss reduction effect of the device 5 according to temperature.The configuration of the voltage output circuit 1300 according to the first modified example of this embodiment is shown.The input and output of the voltage output circuit 1300 according to the first modified example of this embodiment are shown.The configuration of the apparatus 1500 according to a second modified example of this embodiment is shown.The configuration of a switching circuit 1570 according to a second modified example of this embodiment is shown.The configuration of a switching circuit 1700 according to a third modified example of this embodiment is shown.The input and output of the decoder circuit 1710 according to a third modified example of this embodiment are shown.The configuration of the voltage output circuit 1900 according to the fourth modified example of this embodiment is shown. The present invention will be described below through embodiments, but these embodiments are not intended to limit the scope of the claims. Furthermore, not all combinations of features described in the embodiments are necessarily essential to the solution of the invention. Figure 1 shows the configuration of the device 5 according to this embodiment. The device 5 comprises a drive element 10 and a drive device 100. The device 5 comprises a switching element 15 and a temperature sensor 40. The switching element 15 is a semiconductor switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The switching element 15 may be a SiC-I