JP-7856017-B2 - Semiconductor manufacturing equipment

Inventors

• 西山 正幸
• 吉松 直樹
• 米山 玲

Assignees

• 三菱電機株式会社

Dates

Publication Date

20260511

Application Date

20230131

Claims (6)

1. A semiconductor module having semiconductor elements, A sealing material for sealing the aforementioned semiconductor module, A second terminal located outside the sealing material, Equipped with, The semiconductor module comprises a first terminal electrically connected to the semiconductor element and extending outside the encapsulating material, The first terminal is joined to the second terminal outside the sealing material. In the second terminal, the thickness in the direction perpendicular to the joining surface of the joint is defined as the thickness of the second terminal. In the extended portion of the first terminal that extends from the sealing material, the thickness in the direction perpendicular to the joining surface of the joint is defined as the thickness of the first terminal. The thickness of the second terminal is greater than the thickness of the first terminal. A semiconductor manufacturing apparatus wherein the second terminal is U-shaped with a portion cut off above the first terminal .
2. A semiconductor module having semiconductor elements, A sealing material for sealing the aforementioned semiconductor module, A second terminal located outside the sealing material, Equipped with, The semiconductor module comprises a first terminal electrically connected to the semiconductor element and extending outside the encapsulating material, The first terminal is joined to the second terminal outside the sealing material. In the extended portion of the first terminal that extends from the sealing material, The length from the boundary with the sealing material to the tip is defined as the length of the first terminal. The width of the boundary portion in a direction horizontal to the direction of the length and perpendicular to the direction of the length is defined as the width of the first terminal. The length of the first terminal is shorter than the width of the first terminal. A semiconductor manufacturing apparatus wherein the second terminal is U-shaped with a portion cut off above the first terminal .
3. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the cross-sectional area of the extended portion of the first terminal is smaller than the area of the bonding surface of the joint.
4. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the sealing material includes grooves for ensuring distance from the bonding surface of the bond.
5. The semiconductor manufacturing apparatus according to claim 1, wherein the thickness of the second terminal differs between the bonding region including the bonding surface and other regions of the second terminal in contact with the bonding region, and the thickness in the bonding region is thinner than the thickness in the other regions.
6. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the semiconductor element is formed from a wide-bandgap semiconductor.

Description

This disclosure relates to semiconductor manufacturing equipment and methods for manufacturing semiconductor manufacturing equipment. Patent Document 1 discloses a technique for suppressing terminal temperature during current flow by changing the width of terminals protruding from a sealing resin body that encloses a semiconductor element. Japanese Patent Publication No. 2020-150020 This is a top view of a semiconductor manufacturing apparatus according to Embodiment 1 of the present disclosure.This is a cross-sectional view of a semiconductor module mounted on a semiconductor manufacturing apparatus according to Embodiment 1 of the present disclosure.This is a side view of a semiconductor manufacturing apparatus according to Embodiment 1 of the present disclosure.This is a top view of a semiconductor manufacturing apparatus according to embodiments 2 and 3 of the present disclosure.This is a side view of a semiconductor manufacturing apparatus according to embodiments 2 and 3 of the present disclosure.This is a top view of a semiconductor manufacturing apparatus according to Embodiment 4 of the present disclosure.This is a side view of a semiconductor manufacturing apparatus according to Embodiment 4 of the present disclosure.This is a side view of a semiconductor manufacturing apparatus according to Embodiment 5 of the present disclosure.This is a top view of a semiconductor manufacturing apparatus according to Embodiment 6 of the present disclosure.This figure shows a method for manufacturing a semiconductor manufacturing apparatus according to Embodiment 7 of the present disclosure.This figure shows a method for manufacturing a semiconductor manufacturing apparatus according to Embodiment 8 of the present disclosure.This is a schematic diagram of an embodiment 8 of the present disclosure in which laser bonding is performed by irradiating a beam from the side of the second terminal. Embodiment 1 Figure 1 is a top view of a semiconductor manufacturing apparatus 100 according to Embodiment 1 of the present disclosure. The semiconductor manufacturing apparatus 100 comprises a semiconductor module 110, a sealing material 140, and a plurality of second terminals 120. The encapsulant 140 encapsulates the semiconductor module 110. The material of the encapsulant 140 is preferably one that can improve the reliability of the semiconductor module 110; for example, a thermosetting resin material is used. As for the encapsulation method, for example, the transfer molding method is used. The semiconductor module 110 is sealed with a encapsulating material 140. The semiconductor module 110 has multiple first terminals 130. These first terminals 130 are for electrically connecting the semiconductor module 110 to second terminals 120. The first terminals 130 extend outside the encapsulating material 140 and are joined to the second terminals 120 outside the encapsulating material 140. By joining the terminals outside the encapsulating material 140, self-heating during current flow can be suppressed, thereby suppressing the temperature rise of the semiconductor manufacturing apparatus 100. Laser welding is used for joining. Furthermore, the first terminal 130 is broadly divided into a main terminal and a signal terminal. The main terminal is electrically connected to the emitter or collector electrode of the semiconductor element 111 of the semiconductor module 110. On the other hand, the signal terminal is electrically connected to the signal input section of the semiconductor element 111. The signal input section is, for example, the gate electrode. For the main terminal and the signal terminal, for example, a copper material with a thickness of 0.64 mm can be used. The second terminal 120 is positioned outside the encapsulating material 140 and is joined to the first terminal 130 of the semiconductor module 110. The second terminal 120 is preferably made of a material with high heat capacity; for example, copper is used. Furthermore, Figure 1 shows the joint surface 150 of the first terminal 130 and the second terminal 120 with a dotted outline. Hereafter, the direction perpendicular to the joint surface 150 will be defined as the thickness direction of the first terminal 130 and the second terminal 120. Additionally, Figure 1 shows the boundary 160 between the first terminal 130 and the sealing material 140 with a dotted line. Hereafter, the direction perpendicular to the boundary 160 will be defined as the length direction of the first terminal 130 and the second terminal 120. Furthermore, the direction horizontal to the boundary 160 and perpendicular to the length direction will be defined as the width direction of the first terminal 130 and the second terminal 120. Also, the cross-sections of the first terminal 130 and the second terminal 120 when the dotted line indicating the boundary 160 in Figure 1 is cut perpendicular to the plane of the paper will be defined as the cross-sections of the first terminal 130 an