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JP-7856107-B2 - Resist underlayer film forming composition

JP7856107B2JP 7856107 B2JP7856107 B2JP 7856107B2JP-7856107-B2

Inventors

  • 清水 祥
  • 武田 諭
  • 加藤 宏大

Assignees

  • 日産化学株式会社

Dates

Publication Date
20260511
Application Date
20220831
Priority Date
20210913

Claims (14)

  1. A resist underlayer film forming composition comprising a compound represented by the following formula (1) and a solvent. (In formula (1), X independently represents a halogen atom or a monovalent organic group having at least one halogen atom. Y represents an n-valent group, where n is an integer from 2 to 6. However, X does not have a benzene ring. )
  2. The resist underlayer film forming composition according to claim 1, wherein X is represented by the following formula (2). (In formula (2), X1 represents a monovalent non-aromatic hydrocarbon group having at least one halogen atom. X2 represents -O-CO- *1 (*1 represents a bond with X1 ), -NR- (R represents a monovalent organic group having 1 to 12 carbon atoms), or -S-. * represents a bond.)
  3. The resist underlayer film forming composition according to claim 2, wherein X1 is an alkyl group having 1 to 12 carbon atoms and having at least one halogen atom.
  4. The resist underlayer film forming composition according to claim 1, wherein the number of constituent atoms of Y is 5 to 30.
  5. The resist underlayer film forming composition according to claim 1, wherein Y comprises a carbon atom and at least one of a nitrogen atom and an oxygen atom.
  6. The resist underlayer film forming composition according to claim 1, wherein Y is represented by the following formula (11) or (12). (In equations (11) and (12), * represents a coupling.)
  7. The resist underlayer film forming composition according to claim 1, wherein the number of halogen atoms in X is 1 to 5.
  8. The resist underlayer film forming composition according to claim 1, wherein, in the compound represented by formula (1), when Y is the central part of the compound, at least one of the halogen atoms of X is located at the terminal end of the compound.
  9. The resist underlayer film forming composition according to claim 1, wherein the halogen atom is a fluorine atom or an iodine atom.
  10. The resist underlayer film forming composition according to claim 1, further comprising a crosslinking agent.
  11. The resist underlayer film forming composition according to claim 1, further comprising an acid generator.
  12. A resist underlayer film is a fired product of a coated film comprising the resist underlayer film forming composition described in any one of claims 1 to 11.
  13. A step of forming a resist underlayer film by applying the resist underlayer film forming composition according to any one of claims 1 to 11 onto a semiconductor substrate and baking it, The process of applying a resist onto the resist underlayer film and baking it to form a resist film, A step of exposing the semiconductor substrate coated with the resist underlayer film and the resist film, The process involves developing the resist film after exposure and patterning the resist film, A method for manufacturing a semiconductor substrate having a patterned resist film, including the following.
  14. A step of forming a resist underlayer film on a semiconductor substrate, comprising the resist underlayer film forming composition according to any one of claims 1 to 11, A step of forming a resist film on the resist underlayer film, A step of forming a resist pattern by irradiating the resist film with light or an electron beam and then developing it, A step of forming a patterned resist underlayer film by etching the resist underlayer film through the formed resist pattern, A process of processing a semiconductor substrate with the patterned resist underlayer film, A method for manufacturing a semiconductor device, including the method described above.

Description

This invention relates to a resist underlayer film forming composition that can be used in lithography processes in semiconductor manufacturing, particularly in state-of-the-art lithography processes (ArF, EUV, EB, etc.). Furthermore, the invention relates to a method for manufacturing a semiconductor substrate with a resist pattern applied to a resist underlayer film obtained from the resist underlayer film forming composition, and a method for manufacturing a semiconductor device. Conventionally, microfabrication using lithography with resist compositions has been performed in the manufacturing of semiconductor devices. This microfabrication method involves forming a thin film of a photoresist composition on a semiconductor substrate such as a silicon wafer, irradiating it with an active light such as ultraviolet light through a mask pattern on which the device pattern is drawn, developing the film, and then etching the substrate using the resulting photoresist pattern as a protective film, thereby forming fine irregularities on the substrate surface corresponding to the photoresist pattern. In recent years, with the increasing integration density of semiconductor devices, the active light used has also evolved. In addition to the conventionally used i-line (wavelength 365 nm), KrF excimer laser (wavelength 248 nm), and ArF excimer laser (wavelength 193 nm), the practical application of EUV light (wavelength 13.5 nm) or EB (electron beam) is being considered for cutting-edge microfabrication. Consequently, poor resist pattern formation due to influence from the semiconductor substrate has become a major problem. Therefore, in order to solve this problem, methods of providing a resist underlayer film between the resist and the semiconductor substrate are being widely investigated. Patent Document 1 discloses a lithography underlayer film forming composition containing a naphthalene ring having a halogen atom. Patent Document 2 discloses a halogenated anti-reflective film. Patent Document 3 discloses a resist underlayer film forming composition. International Publication No. 2006/003850Special Publication No. 2005-526270International Publication No. 2020/111068 <Resist Underlayer Film Forming Composition> The resist underlayer film forming composition of the present invention comprises a compound represented by the following formula (1) and a solvent. The resist underlayer film forming composition may also contain other components such as crosslinking agents and acid generators. <<<Compound represented by formula (1)>> (In formula (1), X independently represents a halogen atom or a monovalent organic group having at least one halogen atom. Y represents an n-valent group. n represents an integer from 2 to 6.) <<<X>>> Examples of halogen atoms include fluorine atoms, chlorine atoms, bromine atoms, and iodine atoms, but fluorine atoms or iodine atoms are preferred. The halogen atom in the compound represented by formula (1) may be of one type or multiple types, but it is preferable to have only one type because it makes it easier to manufacture the compound represented by formula (1). n is preferably an integer between 2 and 5, and more preferably an integer between 3 and 4. The number of carbon atoms in the monovalent organic group of X is not particularly limited, but is preferably 1 to 50, more preferably 1 to 30, and particularly preferably 3 to 20. The number of halogen atoms in X is not particularly limited; it may be 1 or 2 or more, but 1 to 5 is preferred, and 1 to 3 is more preferred. The multiple X values may be the same or different, but it is preferable that they be the same in that the compound represented by formula (1) is easy to produce. X may or may not have an aromatic hydrocarbon ring. Examples of aromatic hydrocarbon rings include benzene rings, naphthalene rings, and anthracene rings. Preferably, at least one of the halogen atoms in X is bonded to a carbon atom that is not a carbon atom constituting an aromatic hydrocarbon ring. Examples of such carbon atoms include those constituting an alkyl group. X is preferably represented by the following formula (2). (In formula (2), X1 represents a monovalent hydrocarbon group having at least one halogen atom. X2 represents -O-CO- *1 (*1 represents a bond with X1 ), -NR- (R represents a monovalent organic group having 1 to 12 carbon atoms), or -S-. * represents a bond.) The number of carbon atoms in the hydrocarbon group of X1 is not particularly limited, but is preferably 1 to 20, more preferably 1 to 12, and particularly preferably 1 to 6. Examples of hydrocarbon groups in X1 include aromatic hydrocarbon groups and non-aromatic hydrocarbon groups. X1 is preferably an alkyl group having 1 to 12 carbon atoms and having at least one halogen atom, and more preferably an alkyl group having 1 to 6 carbon atoms and having at least one halogen atom. An alkyl group having 1 to 12 carbon atoms and containing at least one halogen atom is, in other words, an