JP-7856181-B2 - Manufacturing method for semiconductor devices

Inventors

• 土持 真悟
• 川島 崇功

Assignees

• 株式会社デンソー

Dates

Publication Date

20260511

Application Date

20250225

Claims (1)

1. A step of solid-bonding main terminals (91, 92, 93) to the surface metal body of a substrate (50) having an insulating substrate (51), a surface metal body (52) disposed on the surface of the insulating substrate, and a back metal body (53) disposed on the surface opposite to the surface of the insulating substrate; A step of forming a plating film (130) on the surface metal body and the surface of the main terminal so as to cover the solid-phase bonding portion (120) of the main terminal, The process includes a step of joining the first main electrode (40) of a semiconductor element (40), which has a first main electrode (40D) provided on one surface and a second main electrode (40S) provided on the back surface opposite to the first surface in the thickness direction, and the surface metal body using a bonding material (100) after the formation of the plating film, The main terminal is a wide terminal (91, 93) having, as the overlapping region with the surface metal body in a plan view in the thickness direction of the plate, a joining region (912) that provides the solid-state joining portion, and a non-joining region (913) which is a region excluding the joining region, provided adjacent to the joining region in at least the width direction of the main terminal and located at the end of the overlapping region, wherein the width of the overlapping region is wider than the width of the joining region . A method for manufacturing a semiconductor device , comprising solid-state bonding one of the overlapping regions to the surface metal body to form a solid-state bonded portion .

Description

The disclosures in this specification relate to methods for manufacturing semiconductor devices . Patent Document 1 discloses a semiconductor device. This semiconductor device comprises a substrate (insulating substrate), a semiconductor element having main electrodes on both sides, and a main terminal (external connection terminal). One of the main electrodes of the semiconductor element is connected to the surface metal body (metal foil) of the substrate via a solder layer. The main terminal is connected to the surface metal body by ultrasonic bonding or the like. The contents of the prior art documents are incorporated by reference in this specification as explanations of the technical elements. Japanese Patent Publication No. 2014-60410 This diagram shows the circuit configuration of a power conversion device to which the semiconductor device according to the first embodiment is applied.This is a perspective view showing a semiconductor device.This is a plan view showing a semiconductor device.This is a plan view showing the substrate on the drain electrode side.This is a plan view showing the substrate on the source electrode side.This is a cross-sectional view along the line VI-VI in Figure 3.This is a cross-sectional view along the line VII-VII in Figure 3.This is a perspective view showing the state in which the substrate on the drain electrode side and the lead frame are joined together.This is a plan view showing the connection structure between the substrate on the drain electrode side and the main terminal.This is an enlarged view of region X in Figure 9.This is a cross-sectional view along the line XI-XI in Figure 10.This is a plan view illustrating a modified example.This is a plan view illustrating a modified example.This is a plan view illustrating a modified example.This is a plan view illustrating a modified example.This is a cross-sectional view showing a reference example.This is a cross-sectional view showing a reference example.This is a cross-sectional view showing a reference example.This is an enlarged perspective view of the area around the junction between the main terminal and the surface metal body in the semiconductor device according to the second embodiment.This is a cross-sectional view along the line XX-XX in Figure 19.This is a cross-sectional view showing the ultrasonic bonding process.This is a cross-sectional view showing ultrasonic bonding between a main terminal and a surface metal body in a method for manufacturing a semiconductor device according to the third embodiment.This is a cross-sectional view showing an example of a semiconductor device.This is a cross-sectional view showing a modified example.This is a cross-sectional view showing the area around the junction between the main terminal and the surface metal body in a semiconductor device according to the fourth embodiment.This is a cross-sectional view showing the area around the separation portion of the back metal body in a semiconductor device according to the fifth embodiment.This is a plan view showing an example of the pattern on the back surface of the metal body. The following describes several embodiments based on the drawings. Note that in each embodiment, corresponding components are denoted by the same reference numerals, and redundant explanations may be omitted. If only a portion of the configuration is described in each embodiment, the configuration of other embodiments described earlier can be applied to the remaining parts of that configuration. Furthermore, not only are the configurations explicitly stated in the description of each embodiment possible, but configurations from multiple embodiments can also be partially combined, even if not explicitly stated, as long as there are no particular problems with the combination. The semiconductor device of this embodiment is applied, for example, to a power conversion device for a mobile body that uses a rotating electric machine as a drive source. Examples of mobile bodies include electric vehicles (BEVs), hybrid electric vehicles (HEVs), plug-in hybrid electric vehicles (PHEVs), and other electric vehicles; aircraft such as electric vertical take-off and landing aircraft and drones; ships; construction machinery; and agricultural machinery. An example of application to a vehicle will be described below. (First Embodiment) First, the general configuration of the vehicle's drive system 1 will be explained based on Figure 1. <Vehicle drive system> As shown in Figure 1, the vehicle's drive system 1 includes a DC power supply 2, a motor generator 3, and a power converter 4. The DC power supply 2 is a DC voltage source composed of a rechargeable secondary battery. The secondary battery is, for example, a lithium-ion battery or a nickel-metal hydride battery. The motor generator 3 is a three-phase AC rotating electric machine. The motor generator 3 functions as the vehicle's driving source, i.e., an electric motor. During regeneration, the motor gene