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JP-7856182-B2 - Semiconductor equipment

JP7856182B2JP 7856182 B2JP7856182 B2JP 7856182B2JP-7856182-B2

Inventors

  • 土持 真悟
  • 川島 崇功

Assignees

  • 株式会社デンソー

Dates

Publication Date
20260511
Application Date
20250225

Claims (9)

  1. A semiconductor element (40) having a first main electrode (40D) provided on one surface and a second main electrode (40S) provided on the back surface opposite to the first surface in the thickness direction, A substrate (50) having an insulating substrate (51), a surface metal body (52) disposed on the surface of the insulating substrate and electrically connected to the first main electrode, and a back metal body (53) disposed on the surface opposite to the surface of the insulating substrate, A bonding material (100) is interposed between the first main electrode and the surface metal body to join the first main electrode and the surface metal body, Main terminals (91, 92, 93) that form a solid-state joint (120) with the surface metal body, Equipped with, The solid-phase bonding portion is an ultrasonic bonding portion, The main terminal has a thick portion (934) which is a part that the ultrasonic tool does not contact when forming the ultrasonic joint , and a thin portion (935) which is a part that the ultrasonic tool contacts and is made thinner than the thick portion by a recess (933) that opens on the side opposite to the surface metal body side . A plurality of recesses (931) corresponding to the protrusions of the ultrasonic tool are formed on the bottom surface (933a) of the recess. Of the thin-walled portion, the thickness T3 of the portion where the recess is not provided is thinner than the thickness T2 of the surface metal body. A semiconductor device in which the thickness T1 of the thickened portion is greater than the thickness T2 of the surface metal body.
  2. The semiconductor device according to claim 1, wherein the height of the burr (932) provided on the bottom surface is shorter than the value obtained by subtracting the thickness T3 from the thickness T1.
  3. The semiconductor device according to claim 2, wherein the angle between the bottom surface and the side surface (933b) of the recess is 45 degrees or more.
  4. The semiconductor device according to claim 2, wherein the corner between the bottom surface and the side surface (933b) of the recess is R-shaped.
  5. A semiconductor device according to any one of claims 1 to 4, wherein roughened portions (936, 521) are provided on either the bonding surface between the main terminal and the surface metal body, or on either the bonding surface between the surface metal body and the main terminal.
  6. The semiconductor device according to claim 5, wherein the roughened portion is one of the following: a laser-roughened portion, a roughened plated portion, a sandblasted roughened portion, or a chemically roughened portion.
  7. The material of the insulating substrate is resin or ceramic. The semiconductor device according to any one of claims 1 to 6, wherein the thickness in the thickness direction of the plate is set in the range of 50 μm to 300 μm when resin is used as the material, and in the range of 200 μm to 500 μm when ceramic is used as the material.
  8. The semiconductor device according to any one of claims 1 to 7, wherein the back surface metal body is patterned to coincide with the front surface metal body in a plan view in the thickness direction of the plate.
  9. The semiconductor element has a plurality of pads (40P) arranged in a predetermined direction, The pad is provided with a plurality of signal terminals (94) connected via bonding wires (110), The semiconductor device according to any one of claims 1 to 8, wherein the plurality of signal terminals include portions that extend in a fan shape such that the distance from the center of the plurality of pads in the predetermined direction is equal to each other.

Description

The disclosures in this specification relate to semiconductor devices . Patent Document 1 discloses a semiconductor device. This semiconductor device comprises a substrate (insulating substrate), a semiconductor element having main electrodes on both sides, and a main terminal (external connection terminal). One of the main electrodes of the semiconductor element is connected to the surface metal body (metal foil) of the substrate via a solder layer. The main terminal is connected to the surface metal body by ultrasonic bonding or the like. The contents of the prior art documents are incorporated by reference in this specification as explanations of the technical elements. Japanese Patent Publication No. 2014-60410 This diagram shows the circuit configuration of a power conversion device to which the semiconductor device according to the first embodiment is applied.This is a perspective view showing a semiconductor device.This is a plan view showing a semiconductor device.This is a plan view showing the substrate on the drain electrode side.This is a plan view showing the substrate on the source electrode side.This is a cross-sectional view along the line VI-VI in Figure 3.This is a cross-sectional view along the line VII-VII in Figure 3.This is a perspective view showing the state in which the substrate on the drain electrode side and the lead frame are joined together.This is a plan view showing the connection structure between the substrate on the drain electrode side and the main terminal.This is an enlarged view of region X in Figure 9.This is a cross-sectional view along the line XI-XI in Figure 10.This is a plan view illustrating a modified example.This is a plan view illustrating a modified example.This is a plan view illustrating a modified example.This is a plan view illustrating a modified example.This is a cross-sectional view showing a reference example.This is a cross-sectional view showing a reference example.This is a cross-sectional view showing a reference example.This is an enlarged perspective view of the area around the junction between the main terminal and the surface metal body in the semiconductor device according to the second embodiment.This is a cross-sectional view along the line XX-XX in Figure 19.This is a cross-sectional view showing the ultrasonic bonding process.This is a cross-sectional view showing ultrasonic bonding between a main terminal and a surface metal body in a method for manufacturing a semiconductor device according to the third embodiment.This is a cross-sectional view showing an example of a semiconductor device.This is a cross-sectional view showing a modified example.This is a cross-sectional view showing the area around the junction between the main terminal and the surface metal body in a semiconductor device according to the fourth embodiment.This is a cross-sectional view showing the area around the separation portion of the back metal body in a semiconductor device according to the fifth embodiment.This is a plan view showing an example of the pattern on the back surface of the metal body. The following describes several embodiments based on the drawings. Note that in each embodiment, corresponding components are denoted by the same reference numerals, and redundant explanations may be omitted. If only a portion of the configuration is described in each embodiment, the configuration of other embodiments described earlier can be applied to the remaining parts of that configuration. Furthermore, not only are the configurations explicitly stated in the description of each embodiment possible, but configurations from multiple embodiments can also be partially combined, even if not explicitly stated, as long as there are no particular problems with the combination. The semiconductor device of this embodiment is applied, for example, to a power conversion device for a mobile body that uses a rotating electric machine as a drive source. Examples of mobile bodies include electric vehicles (BEVs), hybrid electric vehicles (HEVs), plug-in hybrid electric vehicles (PHEVs), and other electric vehicles; aircraft such as electric vertical take-off and landing aircraft and drones; ships; construction machinery; and agricultural machinery. An example of application to a vehicle will be described below. (First Embodiment) First, the general configuration of the vehicle's drive system 1 will be explained based on Figure 1. <Vehicle drive system> As shown in Figure 1, the vehicle's drive system 1 includes a DC power supply 2, a motor generator 3, and a power converter 4. The DC power supply 2 is a DC voltage source composed of a rechargeable secondary battery. The secondary battery is, for example, a lithium-ion battery or a nickel-metal hydride battery. The motor generator 3 is a three-phase AC rotating electric machine. The motor generator 3 functions as the vehicle's driving source, i.e., an electric motor. During regeneration, the motor generator 3 functions as a gen