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JP-7856435-B2 - Semiconductor devices and semiconductor modules

JP7856435B2JP 7856435 B2JP7856435 B2JP 7856435B2JP-7856435-B2

Inventors

  • 大谷 欣也

Assignees

  • 新電元工業株式会社

Dates

Publication Date
20260511
Application Date
20220113

Claims (9)

  1. A first conductive member having a die pad portion, a rising portion that bends upward from the die pad portion, and an upper heat dissipation portion connected to the tip of the rising portion, A chip is placed on the die pad portion via a first conductive bonding material, A second conductive member is disposed on the chip via a second conductive bonding material, A semiconductor device comprising a first conductive member and a molded resin formed on the first conductive member to a height position that fills the surface of the second conductive member opposite to the surface on which the chip is arranged, The side of the die pad portion opposite to the side on which the chip is placed is exposed from the mold resin. At least a portion of the aforementioned upper heat dissipation section is exposed from the molded resin. The semiconductor device is characterized in that the rising portion has a stepped shape .
  2. The semiconductor device according to claim 1, characterized in that the height of the upper surface of the upper heat dissipation portion is the same as or higher than the height of the molded resin.
  3. The semiconductor device according to claim 1 or 2, characterized in that the rising portion and the upper heat dissipation portion are formed in a predetermined portion of the area surrounding the chip when viewed in plan.
  4. The second conductive member extends in a predetermined direction when viewed in plan, The semiconductor device according to claim 3, characterized in that the rising portion and the upper heat dissipation portion are located on the side opposite to the side on which the second conductive member extends relative to the chip when viewed in plan.
  5. The semiconductor device according to any one of claims 1 to 4, characterized in that the first conductive member is integrally formed.
  6. The semiconductor device according to any one of claims 1 to 5, characterized in that the mold resin is in contact with the rising portion.
  7. A semiconductor device according to any one of claims 1 to 6, characterized in that a heat sink is arranged above the molded resin and the upper heat dissipation portion via an insulating heat transfer member.
  8. A plurality of semiconductor devices according to any one of claims 1 to 7 are arranged side by side, A semiconductor module characterized in that a common heat sink is arranged above the mold resin and the upper heat dissipation portion of each of the semiconductor devices via an insulating heat transfer member.
  9. A first conductive member having a die pad portion, a rising portion that bends upward from the die pad portion, and an upper heat dissipation portion connected to the tip of the rising portion, A chip is placed on the die pad portion via a first conductive bonding material, A second conductive member is disposed on the chip via a second conductive bonding material, The first conductive member comprises a molded resin formed on the first conductive member up to a height position that fills the surface of the second conductive member opposite to the surface on which the chip is arranged, The side of the die pad portion opposite to the side on which the chip is placed is exposed from the mold resin. At least a portion of the upper heat dissipation section is provided with multiple semiconductor devices exposed from the molded resin arranged in a row. A semiconductor module characterized in that a common heat sink is arranged above the mold resin and the upper heat dissipation portion of each of the semiconductor devices via an insulating heat transfer member.

Description

This invention relates to semiconductor devices and semiconductor modules. Conventionally, semiconductor devices capable of dissipating heat from both the top and bottom surfaces are known (see, for example, Patent Document 1). Figure 9 is a cross-sectional view showing a conventional semiconductor device 900. As shown in Figure 9, the conventional semiconductor device 900 comprises a first conductive member 910, a chip 920 disposed on the first conductive member 910 via a first conductive bonding material S1 (e.g., solder), a second conductive member 930 disposed on the electrodes of the chip 920 via a second conductive bonding material S2 (e.g., solder), and a molding resin 940 that seals the first conductive member 910, the chip 920, and the second conductive member 930. The lower surface of the first conductive member 910 and the upper surface of the second conductive member 930 are exposed from the molding resin 940. In the conventional semiconductor device 900, the lower surface of the first conductive member 910 and the upper surface of the second conductive member 930 are exposed from the molded resin 940. Therefore, heat generated from the chip 920 is efficiently transferred to the outside via the first conductive member 910 or the second conductive member 930. Consequently, the semiconductor device 900 has high heat dissipation capabilities. In semiconductor modules using such semiconductor devices, it is common practice to arrange multiple semiconductor devices in a row and place a single common heat sink on top. Figure 10 is a cross-sectional view showing a conventional semiconductor module 901. In the conventional semiconductor module 901, as shown in Figure 10, multiple (two in Figure 10) conventional semiconductor devices 900a and 900b are arranged in a row, and a single common heat sink 960 is placed above the semiconductor devices 900a and 900b via insulating heat transfer members 950a and 950b (for example, insulating grease). Japanese Patent Publication No. 2021-72769 This figure shows a semiconductor device 1 according to Embodiment 1. Figure 1(a) shows a perspective view of the semiconductor device 1, and Figure 1(b) shows a cross-sectional view of the semiconductor device 1 along line A-A.This figure illustrates the manufacturing method of the semiconductor device 1 according to Embodiment 1. Figures 2(a-1) to 2(f-1) show schematic perspective views of each process, and Figures 2(a-2) to 2(f-2) show schematic cross-sectional views of each process. The area enclosed by the dashed line shows the rising portion 12 on the side X2.This is a cross-sectional view showing a semiconductor module 100 according to Embodiment 1.This is a cross-sectional view illustrating the semiconductor device 2 according to Embodiment 2. Figure 2(a) shows a cross-sectional view of the semiconductor device 2, and Figure 2(b) shows a cross-sectional view of the semiconductor device according to Comparative Example 1.This is a cross-sectional view showing a semiconductor device 3 according to modified example 1.This is a cross-sectional view showing a semiconductor device 4 according to a modified example 2.This is a cross-sectional view showing a semiconductor device 5 according to modified example 3.This is a cross-sectional view showing a semiconductor device 6 according to modified example 4.This is a cross-sectional view showing a conventional semiconductor device 900. Reference numeral 970 indicates a substrate.This is a cross-sectional view showing a conventional semiconductor module 901. The semiconductor device and semiconductor module of the present invention will be described below based on the embodiments shown in the figures. Note that the embodiments described below do not limit the invention as defined in the claims. Furthermore, not all of the elements and combinations thereof described in the embodiments are necessarily essential to the solution of the present invention. [Embodiment 1] 1. Configuration of the semiconductor device 1 according to Embodiment 1 Figure 1 is a cross-sectional view showing a semiconductor device 1 according to Embodiment 1. As shown in Figure 1(a), the semiconductor device 1 according to Embodiment 1 has a substantially rectangular shape when viewed in plan, having sides X1 and X2 and sides X3 and X4 that face each other, and comprises a molded resin 40 positioned from the center toward side X1, a die pad portion 11 positioned on the bottom surface of the molded resin 40, a flat plate-shaped first upper heat dissipation portion 13 extending toward side X2 of the molded resin 40, a flat plate-shaped second upper heat dissipation portion 14 extending toward side X3 of the molded resin 40, and a flat plate-shaped third upper heat dissipation portion 15 extending toward side X4 of the molded resin 40. A rising portion 12 (see Figure 1(b)) is formed between the molded resin 40 and the first upper heat dissipation portion 13, the second upper heat dissipation portion 14, and t