JP-7856660-B2 - Substrate support and substrate processing apparatus

JP7856660B2JP 7856660 B2JP7856660 B2JP 7856660B2JP-7856660-B2

Inventors

加藤誠人

Assignees

東京エレクトロン株式会社

Dates

Publication Date: 20260511
Application Date: 20220817
Priority Date: 20220215

Claims (18)

A base that is electrically connected to at least one power supply, A first dielectric portion is placed on the base and has a substrate support surface, The base comprises a second dielectric portion having a ring support surface, which is arranged to surround the first dielectric portion on the base, The first dielectric part is, A first heat transfer gas diffusion space for supplying heat transfer gas toward the substrate support surface, A first electrode is positioned above the first heat transfer gas diffusion space, such that it overlaps vertically with at least a portion of the first heat transfer gas diffusion space, It has a conductive part inside which it electrically connects the first electrode and the base, The second dielectric part is A second heat transfer gas diffusion space for supplying heat transfer gas toward the ring support surface, A substrate support having, inside, a second electrode positioned above the second heat transfer gas diffusion space so as to overlap vertically with at least a portion of the second heat transfer gas diffusion space, and electrically connected to a power supply that outputs a voltage common to the base.
The substrate support according to claim 1, wherein the first electrode and the second electrode are arranged in the same plane.
The first dielectric part is, The substrate support according to claim 1 or 2, further comprising a bias electrode for a substrate disposed above the first electrode.
The first dielectric part is, The substrate support according to claim 1 or 2 , further comprising an electrostatic electrode for the substrate disposed above the first electrode.
The second dielectric part is, The substrate support according to claim 1 or 2 , further comprising a ring-type electrostatic electrode positioned above the second electrode.
The substrate support according to claim 1 or 2 , wherein the second electrode is a bias electrode for a ring supported on the ring support surface.
The substrate support according to claim 1 or 2 , wherein a plurality of the conductive portions are arranged along the circumferential direction of the first dielectric portion.
The substrate support according to claim 7, wherein the plurality of conductive portions are arranged at equal intervals along the circumferential direction of the first dielectric portion.
Plasma processing chamber and A plasma processing apparatus comprising a substrate support disposed within the plasma processing chamber, The aforementioned substrate support is, A base that is electrically connected to at least one power supply, A first dielectric portion is placed on the base and has a substrate support surface, The base comprises a second dielectric portion having a ring support surface, which is arranged to surround the first dielectric portion on the base, The first dielectric part is, A first heat transfer gas diffusion space for supplying heat transfer gas toward the substrate support surface, A first electrode positioned above the first heat transfer gas diffusion space, It has a conductive part inside which it electrically connects the first electrode and the base, The second dielectric part is A second heat transfer gas diffusion space for supplying heat transfer gas toward the ring support surface, A plasma processing apparatus having inside a second electrode positioned above the second heat transfer gas diffusion space and electrically connected to a power supply that outputs a voltage common to the base.
The plasma processing apparatus according to claim 9, further comprising an edge ring placed on the ring support surface.
The plasma processing apparatus according to claim 10, wherein the second electrode is the bias electrode for edge ringing.
The plasma processing apparatus according to claim 10 or 11, wherein the area of the ring support surface of the second dielectric portion is smaller than the area of the lower surface of the edge ring supported by the ring support surface.
The plasma processing apparatus according to any one of claims 9 to 11 , wherein the first electrode and the second electrode are arranged in the same plane.
The first dielectric part is, The plasma processing apparatus according to any one of claims 9 to 11 , further comprising a substrate bias electrode disposed above the first electrode.
The first dielectric part is, The plasma processing apparatus according to any one of claims 9 to 11 , further comprising an electrostatic electrode for a substrate disposed above the first electrode.
The second dielectric part is The plasma processing apparatus according to any one of claims 9 to 11 , further comprising a ring-shaped electrostatic electrode positioned above the second electrode.
The plasma processing apparatus according to any one of claims 9 to 11 , wherein a plurality of the conductive portions are arranged along the circumferential direction of the first dielectric portion.
The plasma processing apparatus according to claim 17, wherein the plurality of conductive parts are arranged at equal intervals along the circumferential direction of the first dielectric part.

Description

This disclosure relates to a substrate support and a substrate processing apparatus. Patent Document 1 discloses a mounting stand having a substrate mounting surface on which a substrate is placed and an edge ring mounting surface on which an edge ring is placed. A gas supply pipe is provided inside the mounting stand described in Patent Document 1, and a heat transfer gas such as helium gas is supplied through this gas supply pipe between the back surface of the substrate and the substrate mounting surface, and between the back surface of the edge ring and the edge ring mounting surface. Japanese Patent Publication No. 2021-141277 This is a diagram illustrating an example configuration of a plasma processing system.This is a block diagram of a computer that can implement various embodiments.This is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus.This is a cross-sectional view showing a schematic configuration of the substrate support part according to the embodiment.This is an explanatory diagram of the capacitance in a conventional substrate support structure.This is an explanatory diagram of the capacitance in the substrate support portion according to the embodiment. In the semiconductor device manufacturing process, various plasma treatments such as etching, film deposition, and diffusion are performed on a semiconductor substrate (hereinafter simply referred to as "substrate") supported by a substrate support in a chamber. In these plasma treatments, it is crucial to appropriately control the substrate temperature during processing in order to obtain highly uniform in-plane processing results for the substrate being treated. The substrate temperature during plasma processing is controlled, for example, by creating a gas supply space inside the substrate support that supports the substrate to be processed, and supplying heat transfer gas between the back surface of the substrate and the substrate support surface. However, when a gas supply space is formed inside the substrate support in this manner, a potential difference may be generated within the gas supply space when high-frequency power is applied to the substrate support during plasma processing. As a result, there is a risk that abnormal discharge may occur within the gas supply space. The technology described herein has been developed in view of the above circumstances and suppresses the occurrence of abnormal discharge in the gas diffusion space formed inside the substrate support during plasma treatment of a substrate. Hereinafter, the substrate processing apparatus and substrate support according to this embodiment will be described with reference to the drawings. In this specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant explanations will be omitted. <Plasma Processing System> First, a plasma processing system according to one embodiment will be described with reference to Figure 1. Figure 1 is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support section 11, and a plasma generation section 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply section 20, which will be described later, and the gas outlet is connected to an exhaust system 40, which will be described later. The substrate support section 11 is located in the plasma processing space and has a substrate support surface for supporting a substrate and a ring support surface for supporting an edge ring. The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-resonance plasma), helicon wave excited plasma (HWP), or surface wave plasma (SWP), etc. Furthermore, various types of plasma generation units may be used, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a