JP-7856712-B2 - Semiconductor equipment

JP7856712B2JP 7856712 B2JP7856712 B2JP 7856712B2JP-7856712-B2

Inventors

中西政晴
川本典明

Assignees

ローム株式会社

Dates

Publication Date: 20260511
Application Date: 20240902
Priority Date: 20200427

Claims (19)

Switching element and A sealing resin covering the switching element, Each comprises a first external terminal, a second external terminal, a third external terminal, and a fourth external terminal, each exposed from the sealing resin. The aforementioned switching element is The main surface and back surface of the element, which face opposite each other in the first direction, The first main electrode (source electrode/emitter electrode) is arranged on the main surface of the element, A electrode disposed on the main surface of the element, A second main electrode (drain electrode/collector electrode) is located on the back surface of the element, A temperature sensing diode having an anode and a cathode, It has a first electrode that is electrically connected to one of the anode and cathode and is positioned on the main surface of the element, The first external terminal is electrically connected to the second main electrode, The second external terminal is electrically connected to the gate electrode, The third external terminal is electrically connected to the first main electrode, The fourth external terminal is electrically connected to the first electrode, The anode is electrically connected to one of the first external terminal and the fourth external terminal, and the cathode is electrically connected to the other of the first external terminal and the fourth external terminal. The first external terminal has a wider portion in a third direction perpendicular to the first direction that is larger than the maximum dimension of the fourth external terminal in the third direction. The semiconductor device has a fourth external terminal having a bent portion that is bent such that its tip is biased to one side in the first direction .
A first conductive member that connects the first main electrode and the third external terminal, A second conductive member that connects the gate electrode and the second external terminal, The semiconductor device according to claim 1, further comprising a third conductive member that connects the first electrode and the fourth external terminal to each other.
The semiconductor device according to claim 2, wherein the first conductive member, the second conductive member, and the third conductive member are either a bonding wire or a metal plate, the bonding wire is made of either aluminum or copper, and the metal plate is made of copper.
The semiconductor device according to claim 3, further comprising a joining member for fixing the metal plate to the object to be joined.
The semiconductor device according to claim 4, wherein the bonding member is made of solder.
A semiconductor device according to any one of claims 1 to 5, wherein the connection between the first and second main electrodes is controlled on/off by applying a driving voltage between the gate electrode and the first main electrode while a potential difference is applied between the first and second main electrodes.
A semiconductor device according to any one of claims 1 to 6, further comprising a base portion that faces the back surface of the element and supports the switching element.
Switching element and A sealing resin covering the switching element, Each comprises a first external terminal, a second external terminal, a third external terminal, and a fourth external terminal, each exposed from the sealing resin. The aforementioned switching element is The main surface and back surface of the element, which face opposite each other in the first direction, The first main electrode (source electrode/emitter electrode) is arranged on the main surface of the element, A electrode disposed on the main surface of the element, A second main electrode (drain electrode/collector electrode) is located on the back surface of the element, A temperature sensing diode having an anode and a cathode, It has a first electrode that is electrically connected to one of the anode and cathode and is positioned on the main surface of the element, The first external terminal is electrically connected to the second main electrode, The second external terminal is electrically connected to the gate electrode, The third external terminal is electrically connected to the first main electrode, The fourth external terminal is electrically connected to the first electrode, The anode is electrically connected to one of the third external terminal and the fourth external terminal, and the cathode is electrically connected to the other of the third external terminal and the fourth external terminal. The first external terminal has a wider portion in a third direction perpendicular to the first direction that is larger than the maximum dimension of the fourth external terminal in the third direction. The semiconductor device has a fourth external terminal having a bent portion that is bent such that its tip is biased to one side in the first direction .
The first conductive member further connects the first main electrode and the third external terminal, The sealing resin has a first resin surface facing a second direction perpendicular to the first and third directions, The second external terminal and the fourth external terminal are exposed from the first side surface of the resin. The semiconductor device according to claim 1 or 8, wherein the first electrode is located on the first side surface of the resin, more than the connection portion between the first main electrode and the first conductive member, when viewed in the third direction.
The second external terminal and the fourth external terminal are located adjacent to each other, and the first external terminal and the third external terminal are located adjacent to each other. The semiconductor device according to claim 8, wherein the distance between the second external terminal and the fourth external terminal in the third direction is smaller than the distance between the first external terminal and the third external terminal in the third direction.
The semiconductor device according to claim 8, wherein the first external terminal, the second external terminal, and the fourth external terminal are located opposite each other with respect to the switching element in a second direction orthogonal to the first and third directions.
The device further comprises a second pad, a third pad, and a fourth pad covered with the aforementioned sealing resin, The second pad is connected to the second external terminal, The third pad is connected to the third external terminal, The fourth pad is connected to the fourth external terminal, The semiconductor device according to claim 11 , wherein the dimension of the third pad in the third direction is greater than the dimension of the second pad in the third direction and the dimension of the fourth pad in the third direction.
The semiconductor device according to claim 11 , wherein, in view of the second direction, the second external terminal and the fourth external terminal overlap with the first external terminal.
A first conductive member that connects the first main electrode and the third external terminal, A second conductive member that connects the gate electrode and the second external terminal, The semiconductor device according to claim 8, further comprising a third conductive member that connects the first electrode and the fourth external terminal to each other.
The semiconductor device according to claim 14, wherein the first conductive member, the second conductive member, and the third conductive member are either a bonding wire or a metal plate, the bonding wire is made of either aluminum or copper, and the metal plate is made of copper .
The semiconductor device according to claim 15 , further comprising a joining member for fixing the metal plate to the object to be joined.
The semiconductor device according to claim 16 , wherein the joining member is made of solder.
The semiconductor device according to claim 8 and any one of claims 10 to 17, wherein the connection between the first main electrode and the second main electrode is controlled on/off by applying a driving voltage between the gate electrode and the first main electrode while a potential difference is applied between the first main electrode and the second main electrode.
The semiconductor device according to any one of claims 8 and 10 to 17 , further comprising a base that faces the back surface of the element and supports the switching element.

Description

This disclosure relates to semiconductor devices. Patent Document 1 discloses an example of a switching device (semiconductor device) equipped with a switching element such as a MOSFET. The switching element has a drain electrode, a gate electrode, and a source electrode. The semiconductor device disclosed in the document has three terminals (gate terminal, source terminal, and drain terminal). The gate terminal is a terminal for inputting an electrical signal to the gate electrode. A current converted based on this electrical signal flows from the source electrode through the source terminal to the outside, and a current converted based on this electrical signal flows towards the drain electrode through the drain terminal. In the semiconductor device described in Patent Document 1 above, the presence or absence of failure, lifespan, and reliability are closely related to the operating temperature; therefore, accurately knowing the junction temperature of the semiconductor element is required. When the semiconductor element is a MOSFET, the junction temperature can be measured using the body diode inside the switching element and a thermal resistance meter. For example, using a thermal resistance meter, after applying the drive voltage to the switching element, current is passed through the body diode, and the voltage is measured with the thermal resistance meter to estimate the junction temperature. However, while measuring junction temperature using the thermal resistance meter described above is suitable for laboratory use, it could not be performed under actual operating conditions of semiconductor devices (when the switching elements are driven). Japanese Patent Publication No. 2019-121745 This is a perspective view showing a semiconductor device according to the first embodiment.Figure 1 is a plan view of the semiconductor device A1 shown in Figure 1.This is a cross-sectional view along the line III-III in Figure 2.This is a cross-sectional view along the line IV-IV in Figure 2.This is a cross-sectional view along the line V-V in Figure 2.This figure shows the circuit configuration of the semiconductor device according to the first embodiment.This is a plan view showing a modified example of the semiconductor device according to the first embodiment.This is a plan view showing a modified example of the semiconductor device according to the first embodiment.This is a plan view showing a semiconductor device according to the second embodiment.This is a cross-sectional view along the line X-X in Figure 9.This is a cross-sectional view along the line XI-XI in Figure 9.This is a plan view showing a semiconductor device according to the third embodiment.This is a cross-sectional view along the line XIII-XIII in Figure 12.This is a plan view showing a semiconductor device according to the fourth embodiment.This is a cross-sectional view along the line XV-XV in Figure 14.This is a plan view showing a semiconductor device according to the fifth embodiment.Figure 12 is a plan view showing a modified example of the semiconductor device.This is a cross-sectional view along the line XVIII-XVIII in Figure 17. Preferred embodiments of this disclosure will be described below with reference to the drawings. Figures 1 to 5 show a semiconductor device according to the first embodiment of this disclosure. The semiconductor device A1 of this embodiment comprises a switching element 1, a lead frame 2, a gate wire 52, a source wire 53, a first wire 61, a second wire 62, and a sealing resin 7. Figure 1 is a perspective view of semiconductor device A1. Figure 2 is a plan view of semiconductor device A1. Figure 3 is a cross-sectional view along line III-III in Figure 2. Figure 4 is a cross-sectional view along line IV-IV in Figure 2. Figure 5 is a cross-sectional view along line V-V in Figure 2. In Figure 2, the sealing resin 7 is transparent and is indicated by dashed lines. For ease of understanding, the thickness direction of semiconductor device A1 is defined as the first direction z, the vertical direction in the plan view (Figure 2) perpendicular to the first direction z is defined as the second direction y, and the horizontal direction in the plan view (Figure 2) perpendicular to both the first direction z and the second direction y is defined as the third direction x. Note that the term "up and down" in the following explanation is used for ease of explanation and does not limit the installation orientation of semiconductor device A1 in this disclosure. Switching element 1 is a switching element made of Si or SiC as its base material, and is the element that realizes the switching function that semiconductor device A1 is supposed to perform. Examples of switching element 1 include SiC-MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), SiC-Bipolar Transistor, SiC-JFET (Junction Field Effect Transistor), and SiC-IGBT (Insulated Gate Bipolar Transistor). In this embodiment, the case where switching element 1 is a