JP-7856713-B2 - High-pressure vapor-phase hydrogen oxide supply device, and high-pressure substrate processing apparatus and method utilizing the same.

Inventors

• イ シヒョン
• イム グンヨン
• ミン ビンホン
• ユン ヘソン

Assignees

• エイチピエスピ カンパニー リミテッド

Dates

Publication Date

20260511

Application Date

20240904

Priority Date

20230921

Claims (15)

1. The step of reacting hydrogen gas with oxygen gas, A step to obtain hydrogen oxide generated at a first pressure, A step of converting the generated hydrogen oxide into treated gas phase hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure, A high-pressure substrate processing method comprising the step of reacting the aforementioned treated gas phase hydrogen oxide with a substrate to be processed in a processing chamber.
2. The step of converting the generated hydrogen oxide into treated gas phase hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure is as follows: The high-pressure substrate processing method according to claim 1, further comprising the step of injecting an auxiliary gas into the processing chamber in addition to the gas-phase hydrogen oxide obtained from the generated hydrogen oxide so that the gas-phase hydrogen oxide obtained from the generated hydrogen oxide in the processing chamber reaches a second pressure.
3. The step of converting the generated hydrogen oxide into treated gas phase hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure is as follows: The step of obtaining liquid-phase hydrogen oxide from the generated hydrogen oxide, The steps include pressurizing the liquid phase hydrogen oxide, The high-pressure substrate processing method according to claim 1, further comprising the step of vaporizing the pressurized liquid-phase hydrogen oxide to obtain the processed gas-phase hydrogen oxide.
4. An internal chamber formed to house a processing gas containing hydrogen oxide in the processing phase and having a processing pressure higher than atmospheric pressure, and a substrate to be processed by the processing gas, An outer chamber is formed to house the inner chamber and contain a protective gas having a protective pressure set in relation to the processing pressure, A generation module is formed to generate hydrogen oxide having a generation pressure lower than the processing pressure by reacting hydrogen gas and oxygen gas, A high-pressure substrate processing apparatus, comprising: a conversion module formed to pressurize the generated hydrogen oxide and convert it into the processed gas phase hydrogen oxide having the processing pressure;
5. The aforementioned conversion module is The high-pressure substrate processing apparatus according to claim 4, further comprising an auxiliary gas line formed by injecting an auxiliary gas into the internal chamber in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide, so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the internal chamber reaches the processing pressure.
6. The aforementioned conversion module is The high-pressure substrate processing apparatus according to claim 4, comprising a vaporization heater formed to vaporize liquid-phase hydrogen oxide obtained from the generated hydrogen oxide to generate the treated gas-phase hydrogen oxide.
7. Either the generation module or the conversion module is: The high-pressure substrate processing apparatus according to claim 6, further comprising a water tank formed to contain liquid-phase hydrogen oxide obtained from the generated hydrogen oxide and communicating with the vaporization heater.
8. The aforementioned conversion module is The high-pressure substrate processing apparatus according to claim 7, further comprising a pump disposed between the water tank and the vapor heater, and formed to pressurize and pump the liquid-phase hydrogen oxide obtained from the generated hydrogen oxide toward the internal chamber.
9. The aforementioned conversion module is A discharge line is formed to discharge unreacted gases from the water tank, which are hydrogen gas and oxygen gas that have not participated in the reaction. The high-pressure substrate processing apparatus according to claim 7, further comprising an injection line formed to inject a purge gas into the water tank for purging the unreacted gas.
10. The system further includes a heating module positioned within the external chamber to heat the processing gas to a processing temperature, The aforementioned vaporization heater is The high-voltage substrate processing apparatus according to claim 6, which is disposed within the external chamber.
11. A generation module is formed to generate hydrogen oxide having a generation pressure lower than the processing pressure for processing the substrate in a high-pressure substrate processing apparatus by reacting hydrogen gas and oxygen gas, The system includes a conversion module formed to pressurize the generated hydrogen oxide and convert it into treated gas phase hydrogen oxide having the processing pressure, The aforementioned processing pressure is A high-pressure vapor-phase hydrogen oxide supply device for high-pressure substrate processing equipment, operating at a pressure higher than atmospheric pressure.
12. The aforementioned conversion module is A high-pressure gaseous hydrogen oxide supplying device for a high-pressure substrate processing apparatus according to claim 11, further comprising an auxiliary gas line formed in the processing chamber where the substrate to be processed is placed, to inject an auxiliary gas in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide into the processing chamber so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the processing chamber reaches the processing pressure.
13. The aforementioned conversion module is A high-pressure vapor-phase hydrogen oxide supply device for a high-pressure substrate processing apparatus according to claim 11, comprising a vaporization heater formed to vaporize the liquid-phase hydrogen oxide obtained from the generated hydrogen oxide to generate the processed vapor-phase hydrogen oxide.
14. Either the generation module or the conversion module is: A high-pressure vapor-phase hydrogen oxide supply device for a high-pressure substrate processing apparatus according to claim 13, further comprising a water tank formed to contain liquid-phase hydrogen oxide obtained from the generated hydrogen oxide and communicating with the vaporization heater.
15. The aforementioned conversion module is A high-pressure vapor-phase hydrogen oxide supplying device for a high-pressure substrate processing apparatus according to claim 14, further comprising a pump disposed between the water tank and the vaporization heater, which is formed to pressurize and pump the liquid-phase hydrogen oxide obtained from the generated hydrogen oxide toward the processing chamber in the high-pressure substrate processing apparatus where the substrate to be processed is placed.

Description

This invention relates to a high-pressure substrate processing apparatus and method, and a high-pressure vapor-phase hydrogen oxide supply device used therein. Generally, various processes are performed on the semiconductor substrate during the manufacturing process of semiconductor devices. Examples of these processes include oxidation, nitriding, ion implantation, and vapor deposition. There are also hydrogen or deuterium heat treatment processes to improve the interface properties of the semiconductor device. The aforementioned manufacturing process is broadly divided into a vacuum process and a high-pressure process, depending on the pressure of the gas acting on the substrate. The former involves a pressure lower than atmospheric pressure, while the latter involves a pressure higher than atmospheric pressure. Because the two processes have different characteristics and properties, what is not a problem in one process may cause a major problem in the other. For example, when using water vapor in wet oxidation, unlike the vacuum process, impurities can become a major problem in the high-pressure process. The aforementioned background technology is technical information possessed by the inventor for the purpose of deriving embodiments of the present invention, or acquired during the derivation process, and does not necessarily constitute prior art that was disclosed to the general public before the filing of this application. This is a conceptual diagram of a high-voltage substrate processing apparatus according to one embodiment of the present invention.This is a block diagram illustrating the control configuration of the high-voltage substrate processing apparatus shown in Figure 1.Figure 2 is a conceptual diagram showing the generation module.This is a conceptual diagram showing a generation module and a conversion module according to another embodiment of the present invention.Figure 4 is a cross-sectional view showing the water tank.This is a conceptual diagram showing a generation module and a conversion module according to another embodiment of the present invention.This is a flowchart illustrating a high-pressure substrate processing method according to yet another embodiment of the present invention.This flowchart shows a specific example of a process related to the first step in Figure 6.This flowchart shows other specific processing examples related to the first step in Figure 6. Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The present invention is not limited to the embodiments disclosed below, but can be modified in various ways and implemented in a variety of different forms. However, these embodiments are provided to ensure a complete disclosure of the invention and to fully inform those in the ordinary skill of its scope. Therefore, the present invention should be understood to include not only the embodiments disclosed below, but also all modifications, equivalents, or substitutions that fall within the technical spirit and scope of the invention, as well as the substitution or addition of components from one embodiment to another. The accompanying drawings are intended solely to facilitate understanding of the embodiments disclosed herein and should not be understood as limiting the technical ideas disclosed herein, including all modifications, equivalents, or substitutions that fall within the concept and technical scope of the present invention. While components in the drawings may be exaggerated in size or thickness for ease of understanding, this should not be interpreted as restricting the scope of protection of the present invention. The terms used herein are solely for the purpose of describing specific examples and embodiments and are not intended to limit the invention. Furthermore, singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "includes" and "constitute" are intended to specify the existence of features, figures, stages, operations, components, parts, or combinations thereof described herein. That is, terms such as "includes" and "constitute" in this specification should be understood as not preemptively excluding the possibility of the existence or addition of one or more other features, figures, stages, operations, components, parts, or combinations thereof. Terms including ordinal numbers, such as "first," "second," etc., can be used to describe various components, but the components are not limited by such terms. These terms are used solely for the purpose of distinguishing one component from others. When one component is described as being "connected" or "linked" to another component, it should be understood that while it may be directly connected or linked to the other component, there may also be other components in between. Conversely, when one component is described as being "directly connected" or "dire