JP-7856826-B2 - Semiconductor laser device

Inventors

• 山口 敦司
• 坂本 晃輝

Assignees

• ローム株式会社

Dates

Publication Date

20260511

Application Date

20250619

Priority Date

20181205

Claims (10)

1. Semiconductor laser element, A switching element having a gate electrode, a source electrode, and a drain electrode, A second conductive portion on one side of the first direction in which the switching element is arranged, The device comprises a third conductive portion on one side of the first direction in which the semiconductor laser element is arranged, The second conductive portion and the third conductive portion are spaced apart in a second direction intersecting the first direction. The second conductive portion has a second recess that is recessed on the side opposite to the side on which the third conductive portion is located relative to the second conductive portion in the second direction, The third conductive portion has a third convex portion that protrudes to the other side in the second direction, The third convex portion and the second concave portion overlap in the second viewing direction. A semiconductor laser device in which at least a portion of the semiconductor laser element is arranged on the third protrusion.
2. The material includes a substrate that supports the second conductive portion and the third conductive portion from the other side in the first direction, The substrate has a substrate recess located on one side in the second direction with respect to the third conductive portion and recessed on the other side in the second direction, The third conductive portion has a third recess that is recessed to the other side in the second direction, The semiconductor laser apparatus according to claim 1, wherein the substrate recess and the third recess overlap with the second recess, the third protrusion and the semiconductor laser element in the second view.
3. It comprises two of the aforementioned semiconductor laser elements, The semiconductor laser apparatus according to claim 1 or 2, wherein at least a portion of each of the two semiconductor laser elements is arranged on the third protrusion.
4. A first conductive portion spaced apart from the second conductive portion and the third conductive portion, A semiconductor laser apparatus according to any one of claims 1 to 3, comprising one or more second wires connecting the source electrode and the first conductive portion.
5. The semiconductor laser apparatus according to claim 4, comprising a diode that allows current to flow from the third conductive portion to the first conductive portion.
6. The semiconductor laser element is covered with a light-transmitting resin, The semiconductor laser apparatus according to claim 2, wherein a portion of the light-transmitting resin is filled into the recess of the substrate.
7. The semiconductor laser apparatus according to claim 5, wherein the diode is disposed on the first conductive portion.
8. The device comprises two capacitors, each electrically connected to the second conductive portion and the third conductive portion, The semiconductor laser apparatus according to any one of claims 1 to 6, wherein in a third direction intersecting the first and second directions, the semiconductor laser element is located between the two capacitors.
9. A semiconductor laser apparatus according to any one of claims 1 to 8, comprising one or more first wires connected to the source electrode and the semiconductor laser element.
10. A fourth conductive portion spaced apart from the second conductive portion and the third conductive portion, A semiconductor laser apparatus according to any one of claims 1 to 9, comprising the gate electrode and a third wire connected to the fourth conductive portion.

Description

This disclosure relates to a semiconductor laser device. A system using LiDAR (Light Detection and Ranging, Laser Imaging Detection and Ranging) has been proposed for three-dimensional distance measurement used in automobiles and other applications (for example, Patent Document 1). The semiconductor laser device used as the light source for LiDAR emits pulsed laser light with a pulse width of several tens of nanoseconds or less. Therefore, the time rate of change of the current increases, and losses due to the inductance component within the semiconductor laser device increase. Japanese Patent Publication No. 2018-128432 This is a plan view of a main part of a semiconductor laser device according to the first embodiment of this disclosure.This is a bottom view showing a semiconductor laser device according to the first embodiment of this disclosure.This is a cross-sectional view along the line III-III in Figure 1.This is a cross-sectional view along the line IV-IV in Figure 1.This is a cross-sectional view along the line V-V in Figure 1.This is a cross-sectional view along the line VI-VI in Figure 1.This is a cross-sectional view along the line VII-VII in Figure 1.This is a circuit diagram showing a laser system including a semiconductor laser device according to the first embodiment of this disclosure.This is a circuit diagram showing a first modified example of a laser system including a semiconductor laser device according to the first embodiment of this disclosure.This is a circuit diagram showing a second modified example of a laser system including a semiconductor laser device according to the first embodiment of this disclosure.This is a plan view of a main part showing a first modified example of a semiconductor laser device according to the first embodiment of this disclosure.This is a bottom view showing a first modified example of a semiconductor laser device according to the first embodiment of this disclosure.This is a plan view of a main part showing a second modified example of a semiconductor laser device according to the first embodiment of this disclosure.This is a bottom view showing a second modified example of a semiconductor laser device according to the first embodiment of this disclosure.This is a plan view of a main part showing a third modified example of a semiconductor laser device according to the first embodiment of this disclosure.This is a bottom view showing a third modified example of a semiconductor laser device according to the first embodiment of this disclosure.This is a plan view of a main part showing a fourth modified example of a semiconductor laser device according to the first embodiment of this disclosure.This is a bottom view showing a fourth modified example of a semiconductor laser device according to the first embodiment of this disclosure.This is a plan view of a main part showing a fifth modified example of a semiconductor laser device according to the first embodiment of this disclosure.This is a bottom view showing a fifth modified example of a semiconductor laser device according to the first embodiment of this disclosure.This is a plan view of a main part of a semiconductor laser device according to a second embodiment of the present disclosure.This is a bottom view showing a semiconductor laser device according to a second embodiment of this disclosure.This is a plan view of a main part showing a first modified example of a semiconductor laser device according to a second embodiment of the present disclosure.This is a bottom view of a main part showing a first modified example of a semiconductor laser device according to a second embodiment of this disclosure.This is a cross-sectional view along the line XXV-XXV in Figure 23.This is a plan view of a main part showing a second modified example of a semiconductor laser device according to a second embodiment of the present disclosure.This is a bottom view of a main part showing a second modified example of a semiconductor laser device according to the second embodiment of this disclosure.This is a plan view of a main part showing a third modified example of a semiconductor laser device according to the second embodiment of this disclosure.This is a bottom view of a main part showing a third modified example of a semiconductor laser device according to the second embodiment of this disclosure.This is a plan view of a main part of a semiconductor laser device according to a third embodiment of the present disclosure.This is a bottom view showing a semiconductor laser device according to the third embodiment of this disclosure.This is a plan view of a main part showing a first modified example of a semiconductor laser device according to the third embodiment of this disclosure.This is a bottom view showing a first modified example of a semiconductor laser device according to the third embodiment of this disclosure.This is a plan view of a main part of a semiconductor laser device according to the fourth emb