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JP-7856933-B2 - Method for manufacturing a laminate and laminate

JP7856933B2JP 7856933 B2JP7856933 B2JP 7856933B2JP-7856933-B2

Inventors

  • 中川 智尋
  • 大向 吉景
  • 細田 一輝
  • 並川 敬

Assignees

  • ダイキン工業株式会社

Dates

Publication Date
20260512
Application Date
20250305
Priority Date
20240329

Claims (20)

  1. A method for manufacturing a laminate containing two silicon substrates, (a) preparing a first silicon substrate having a first conductive region on at least a portion of its surface and a second silicon substrate having a second conductive region on at least a portion of its surface, and (b) joining the surface of the first silicon substrate including the first conductive region to the second silicon substrate with an adhesive layer, The first silicon substrate has a first activated region provided by activating at least a portion of the surface including the first conductive region, The adhesive layer is provided on at least a portion of the first activated region and at least a portion of the second conductive region. The adhesive layer has a first reaction product derived from a first organic material, The first reaction product is present at least on the surface facing the first activation region and is capable of reacting with the first activation region. The thickness of the adhesive layer is 10 nm or less. A method for manufacturing a conductive laminate.
  2. The manufacturing method according to claim 1, wherein the first conductive region includes a metal.
  3. The manufacturing method according to claim 2, wherein the metal in the first conductive region is at least one selected from the group consisting of Cu, Co, Fe, Al, W, Ru, and Hf.
  4. The manufacturing method according to claim 1, wherein the surface of the first conductive region is exposed.
  5. The manufacturing method according to claim 1, wherein at least a portion of the surface of the first conductive region is in contact with the adhesive layer.
  6. The manufacturing method according to claim 1, wherein the adhesive layer is formed from two or more layers.
  7. The first activation region is provided in at least a portion of the first conductive region and at least a portion of the first silicon substrate. The first conductive region includes at least one selected from the group consisting of Cu, Co, Fe, Al, W, Ru, and Hf. The adhesive layer is in contact with the first activated region, The thickness of the adhesive layer is 5 nm or less. The manufacturing method according to claim 1.
  8. The adhesive layer is provided on a second activated region, which is formed by activating at least a portion of the surface of the second silicon substrate facing the second conductive region, and contains a second reaction product derived from a second organic material. A method for manufacturing a laminate according to claim 1.
  9. The manufacturing method according to claim 8, wherein the second conductive region includes a metal.
  10. The manufacturing method according to claim 9 , wherein the metal in the second conductive region is at least one selected from the group consisting of Cu, Co, Fe, Al, W, Ru, and Hf.
  11. The manufacturing method according to claim 8, wherein the surface of the second conductive region is exposed.
  12. The manufacturing method according to claim 8, wherein at least a portion of the surface of the second conductive region is in contact with the adhesive layer.
  13. The manufacturing method according to claim 1, wherein a gap is provided between the first silicon substrate and the second silicon substrate that is in contact with both the first activated region and the second conductive region.
  14. The manufacturing method according to claim 1 , wherein the thickness of the adhesive layer is 5 nm or less.
  15. The first activation region is provided in at least a portion of the first conductive region and at least a portion of the first silicon substrate. The second activation region is provided in at least a portion of the second conductive region and at least a portion of the second silicon substrate. The first conductive region and the second conductive region each include at least one selected from the group consisting of Cu, Co, Fe, Al, W, Ru, and Hf. The adhesive layer is in contact with the first activated region and the second activated region. The thickness of the adhesive layer is 5 nm or less. The manufacturing method according to claim 8.
  16. A first silicon substrate having a first conductive region on at least a portion of its surface, A second silicon substrate located on the side having the first conductive region, An adhesive layer located between the first silicon substrate and the second silicon substrate, which bonds the surface of the first silicon substrate having the first conductive region to the second silicon substrate, It has, A laminate having conductivity between the first silicon substrate and the second silicon substrate, At least a portion of the surface of the first silicon substrate including the first conductive region has an activated first activated region, The second silicon substrate has a second conductive region on at least a portion of its surface, The adhesive layer is provided on at least a portion of the first activated region and at least a portion of the second conductive region, and has a first reaction product derived from the first organic material. The first reaction product is present at least on the surface facing the first activation region and is capable of reacting with the first activation region. A laminate in which the thickness of the adhesive layer is 10 nm or less.
  17. The laminate according to claim 16, wherein the thickness of the adhesive layer is 5 nm or less.
  18. The laminate according to claim 16, wherein the adhesive layer consists of two or more layers.
  19. The thickness of the adhesive layer is 5 nm or less. The adhesive layer adheres the surface having the first conductive region to the surface having the second conductive region. The laminate according to claim 16.
  20. The laminate according to claim 16, wherein the conductivity measured in the adhesive layer disposed on the first silicon substrate is in the range of 1.0 × 10⁻² to 5.0 × 10² pA.

Description

This invention relates to a method for manufacturing a laminate and to a laminate itself. In the field of semiconductor technology, for example, Patent Document 1 has explored a method for joining two silicon substrates by providing an adhesive layer between them. International Publication No. 2023/276638 A schematic cross-sectional view showing a portion of the laminate in the first embodiment is shown.A schematic cross-sectional view showing a portion of the laminate in the first embodiment is shown.A schematic cross-sectional view showing a portion of the laminate in the first embodiment is shown.A schematic cross-sectional view showing a portion of the laminate in the second embodiment is shown.A schematic cross-sectional view showing a portion of the laminate in a modified example is shown. Embodiments of this disclosure will be described in detail below with reference to the drawings, but this disclosure is not limited to these embodiments. <First Embodiment> Figures 1A, 1B, and 1C are schematic cross-sectional views showing a portion of the cross-section of the laminate 40 in the first embodiment. As shown in Figures 1A, 1B, and 1C, the laminate 40 has a first silicon substrate 10 and a second silicon substrate 20. As shown in Figures 1A and 1C, an adhesive layer 30 is located between the first silicon substrate 10 and the second silicon substrate 20. As shown in Figures 1A and 1C, the first conductive region 15 and the second conductive region 25 are joined via the adhesive layer 30. As shown in Figures 1A to 1C, the laminate 40 can be obtained by a manufacturing method that includes the following steps. (a) preparing a first silicon substrate 10 having a first conductive region 15 on at least a portion of its surface and a second silicon substrate 20, and (b) joining the surface of the first silicon substrate 10 on the side of the first conductive region 15 and the second silicon substrate 20 with an adhesive layer 30, The adhesive layer 30 contains a first reaction product derived from a first organic material that can react with the first activated region 15a, which is provided by activating at least a portion of the surface of the first silicon substrate 10 that includes the first conductive region 15. By having the above configuration, a new substrate can be provided. The following describes each step. In the following, "on the first silicon substrate 10" may refer to a state where the substrate is in direct contact with the first silicon substrate 10, or a state where other layers are included on top of the first silicon substrate 10, unless otherwise specified. The same applies to other substrates, layers, and regions. [Step a] A first silicon substrate 10 having a first conductive region 15 on at least a portion of its surface, and a second silicon substrate 20 are prepared. (First and second silicon substrates 10, 20) The first and second silicon substrates 10 and 20 (hereinafter collectively referred to simply as "silicon substrates") may be any silicon-based substrate (or base material), and may consist solely of silicon, or may contain any other suitable substance in addition to silicon. Examples of such other substances include dopants and impurities that may inevitably be present, metals (e.g., electrodes, wiring, vias, etc.), and oxides, nitrides and/or carbides of silicon, etc. (e.g., dielectric layers, insulating layers, protective layers, etc.). The first silicon substrate 10 and the second silicon substrate 20 may have the same configuration or different configurations. In one embodiment, the first silicon substrate 10 and the second silicon substrate have the same configuration. In another embodiment, the first silicon substrate 10 and the second silicon substrate have different configurations. The first silicon substrate 10 may have a first bonding portion on its surface. The second silicon substrate 20 may have a second bonding portion on its surface. The first and second bonding portions are collectively referred to simply as "bonding portions." (1st, 2nd joint) In this embodiment, the joint portion may be any portion containing silicon oxide (hereinafter also referred to as the "silicon oxide portion"). The silicon oxide portion may consist of silicon oxide, or it may contain any other suitable substance in addition to silicon oxide. Examples of such other substances include dopants and impurities that may inevitably be present. The joint can be formed, for example, by oxidizing (i.e., surface treating) the entire surface or a portion of the surface of the silicon substrate (typically, one of two opposing surfaces of the silicon substrate). That is, the first joint may cover the entire surface of the first silicon substrate 10 (typically, one of two opposing surfaces of the first silicon substrate 10) or a portion of it. The second joint may cover the entire surface of the second silicon substrate 20 (typically, one of two opposing surfaces of the second silicon substrate 20)