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JP-7856959-B2 - Small-volume UHV ion trap package and method for forming it.

JP7856959B2JP 7856959 B2JP7856959 B2JP 7856959B2JP-7856959-B2

Inventors

  • キム ジュンサン
  • フレイセン ヘルト
  • インレック イスマイル
  • ノエル トム
  • アイヴォリー メーガン
  • カト アレクサンダー
  • ヒューズ スティーヴ

Assignees

  • デューク ユニバーシティ
  • コールドクアンタ インコーポレイテッド

Dates

Publication Date
20260512
Application Date
20210709
Priority Date
20210709

Claims (12)

  1. It is an ion trap system, An ion trap placed on a chip carrier, An enclosure that seals the ion trap in the first chamber, The enclosure comprises a plurality of piece parts including the chip carrier and the housing, the piece parts of the plurality of piece parts are joined by a plurality of seals consisting of UHV seals, and at least one of the plurality of seals comprises at least one of a welded joint and a brazed joint. The first chamber has a pressure of 10⁻¹⁰ Torr or less. The first chamber has an internal volume of 10 cm³ or less. The ion trap system has an operating temperature of -50°C or higher. In a UHV chamber, which is an environmental chamber capable of maintaining a pressure of 10⁻⁹ Torr or less , the piece parts of the enclosure are joined using only the UHV seal, and the enclosure is sealed while the first chamber has a pressure of 10⁻⁹ Torr or less. All of the aforementioned piece parts are sealed with the UHV seal only. The ion trap system does not use a cryostat, vacuum valve, or pinch-off tube. An ion trap system characterized by the following features.
  2. It also features an ablation oven, The ion trap system according to claim 1.
  3. The aforementioned plurality of piece parts include a first window, The ion trap system according to claim 2.
  4. The first window includes a single-crystal material that suppresses the diffusion of low-molecular-weight gas through the window. The ion trap system according to claim 3.
  5. The enclosure includes a first surface which is activated to adsorb gas molecules, The ion trap system according to claim 1.
  6. (1) further comprising a getter material and (2) an ion pump, The ion trap system according to claim 1.
  7. It is an ion trap system, An ion trap placed on a chip carrier, An enclosure comprising a plurality of piece parts including the chip carrier and housing, which seals the ion trap in the first chamber, Multiple seals, each made of a UHV seal, join the multiple piece parts together. An ion pump joined to the enclosure via a first UHV seal, Equipped with, At least one of the plurality of seals includes at least one of a welded joint and a brazed joint, The first chamber has a pressure of 10⁻¹⁰ Torr or less. The aforementioned ion trap system does not use a cryo-adsorption pump. The ion trap system is configured to enable an operating temperature of -50°C or higher. In a UHV chamber, which is an environmental chamber capable of maintaining a pressure of 10⁻⁹ Torr or less , the piece parts of the enclosure are joined using only the UHV seal, and the enclosure is sealed while the first chamber has a pressure of 10⁻⁹ Torr or less. All of the aforementioned piece parts are sealed with the UHV seal only. The ion trap system does not use a cryostat, vacuum valve, or pinch-off tube. An ion trap system characterized by the following features.
  8. The ion trap system according to claim 7, wherein the first chamber has an internal volume of 10 cm³ or less.
  9. It also features an ablation oven, The ion trap system according to claim 7.
  10. The enclosure further includes a first window joined to the enclosure in a second UHV seal, the second UHV seal includes at least one of a welded joint and a brazed joint. The ion trap system according to claim 9.
  11. The window includes a single-crystal material that suppresses the diffusion of low-molecular-weight gases through the window. The ion trap system according to claim 10.
  12. The enclosure includes a first surface which is activated to adsorb gas molecules, The ion trap system according to claim 7.

Description

[Description of federally funded research] This invention was developed with government support under Federal License No. W911NF16-1-0082, granted by the United States Army Research Laboratory. The government reserves certain rights in this invention. [Cross-reference with related applications] This application is a continuation-in-part application of the concurrently pending U.S. Patent Application No. 16/913,932 (Agent No. 525-015US2), filed on 26 March 2018, which is a divisional application of the U.S. Patent Application No. 15/935,312 (Agent No. 525-015US1) (current U.S. Patent No. 10,755,913), filed on 26 March 2018, claiming the interests of the U.S. Provisional Application No. 62/533,927 (Agent No. DU5308PROV), filed on 18 July 2017. Each of these documents is incorporated herein by reference as if described in detail. Furthermore, this application also claims the interests of U.S. Provisional Patent Application No. 63/049,842 (Agent Reference Number: DU7191PROV), filed on 9 July 2020, which is incorporated herein by reference as if it were described in detail herein. This disclosure relates to quantum computing in general, and more specifically, to an ion trap housing capable of supporting an ultra-high vacuum environment. Systems using atomic ions are one of the primary physical platforms for practical quantum computers due to their long coherence time, complete connectivity between qubits, and high-fidelity gate operations. However, unlike solid-state based qubits, an integrated approach to extending trapped ion systems is not yet clear. Many novel ideas for designing complex trapped ion systems have been outlined in order to build practical trapped ion quantum computing systems. Captured ion experiments ultimately rely on the absence of collision events with background gas molecules, whether using conventional linear pole traps or microfabricated surface traps, to provide better qubit separation and reliable high-fidelity gates. Critically, the pressure in the ultra-high vacuum (UHV) region (<1 * 10⁻¹¹ Torr) must be kept low enough to minimize ion-chain reordering events and ion losses from the trap. Furthermore, high-fidelity gates are required for quantum computing, which inevitably necessitates excellent optics-mechanical robustness and stability of scalable captured ion quantum computers. To properly utilize these transitions for qubit manipulation and readout, the optical frequency of the laser driving the near-resonant processes should be stabilized within the range of 10⁻¹⁰ . In many cases, quantum logic gates are driven by Raman transitions where two far-detuned non-co-propagating beams with precise frequency differences intersect at the ion's position. Variations in the beam path and beam pointing of these Raman beams cause variations in the optical phase and intensity at the ion, resulting in an imperfect gate. To avoid these problems, the ion capture system and the optical elements used to deliver the laser beam must be stable against environmental noise such as temperature fluctuations, airflow, and mechanical vibrations. This is a block diagram of an exemplary ion trap system as described in this disclosure.This is a schematic diagram of a top view of an ion trap package according to an exemplary embodiment.This is a schematic diagram of a cross-sectional view of an ion trap package according to an exemplary embodiment.This figure shows the operation of a method suitable for forming an ion trap package, according to an exemplary embodiment.This is a block diagram of the UHV assembly system as disclosed herein.This figure shows the operation of the method for monitoring pressure within an ion trap system according to the present disclosure.This figure shows a simulation of the double well potential according to this disclosure.This figure plots the positions of trapped ions between wells in a double-well potential as a function of time, according to the present disclosure.This figure shows the operation of another method for monitoring pressure within an ion trap system according to the present disclosure.This figure shows the first and second chain configurations used to estimate the collision energy of the six-ion chain in Method 700.This figure shows a histogram of the time intervals between ion rearrangement events. The following is merely an explanation of the principles of this disclosure. Therefore, those skilled in the art will understand that they can devise various configurations that embody the principles of this disclosure, although not explicitly described or illustrated herein, and that fall within the spirit and scope of this disclosure. Furthermore, all examples and conditional statements described herein are expressly intended solely for educational purposes to help readers understand the principles of this disclosure and the concepts introduced by the inventors (one or multiple) to advance the art, and should be construed as not being limited to such specifically de