JP-7856965-B2 - Sputtering device

JP7856965B2JP 7856965 B2JP7856965 B2JP 7856965B2JP-7856965-B2

Inventors

江部明憲
近藤裕佑
筧芳治
佐藤和郎
幾原志郎
岩▲崎▼ 伸一
小川倉一

Assignees

株式会社イー・エム・ディー
地方独立行政法人大阪産業技術研究所
株式会社麗光
小川倉一

Dates

Publication Date: 20260512
Application Date: 20210430

Claims (9)

a) A first target holder and a second target holder, respectively, which hold the first target and the second target so that their surfaces face each other, b) A substrate holder provided on one side of the plasma generation region, which is the region between the first target and the second target held by the first target holder and the second target holder, respectively, c) A first main magnetic field generating unit and a second main magnetic field generating unit are provided on the opposite side of the plasma generation region with respect to the first target and on the opposite side of the plasma generation region with respect to the second target, respectively, with magnets arranged so that opposite poles face each other, and generating a first main magnetic field and a second main magnetic field on the surfaces of the first target and the second target, respectively. d) A power supply that generates an electric field within the plasma generation region by applying a predetermined potential to the first target holder and the second target holder, respectively, e) A high-frequency electromagnetic field generating unit provided on the side of the plasma generation region facing the substrate holder across the plasma generation region, which generates a high-frequency electromagnetic field within the plasma generation region, f) A plasma source gas introduction unit for introducing plasma source gas into the plasma generation region, g) The first target holder and the second target holder are provided at the substrate holder-side ends and include an auxiliary magnetic field generating unit that generates an auxiliary magnetic field that confines cations and electrons within the plasma generation region and is directed from one side of the first target holder and the second target holder to the other side, A sputtering apparatus characterized in that there are no means for generating a magnetic field at the ends of the first target holder and the second target holder on the side of the high-frequency electromagnetic field generation unit.
The sputtering apparatus according to claim 1, characterized in that the first target holder and the second target holder each hold the first target and the second target such that their surfaces are inclined and facing each other.
The sputtering apparatus according to claim 2, characterized in that the substrate holder is provided on the side with the wider spacing of the plasma generation region.
The sputtering apparatus according to any one of claims 1 to 3, characterized in that the auxiliary magnetic field generating unit comprises a first auxiliary magnet provided at the end of the first target holder closer to the substrate holder, and a second auxiliary magnet provided at the end of the second target holder closer to the substrate holder.
Either one or both of the first target holder and the second target holder is a cylindrical member that holds a cylindrical target on the side surface of a cylindrical member and is rotatable about the axis of the cylinder , The sputtering apparatus according to claim 1, characterized in that the first main magnetic field generating unit and the second main magnetic field generating unit, the one whose corresponding target holder is the cylindrical target holder, are arranged inside the cylindrical member.
Furthermore, a shielding plate is provided on the outside of the first target holder and the second target holder, and has an opening at a position facing the substrate holder. The sputtering apparatus according to claim 5, characterized in that the auxiliary magnetic field generating unit has a first auxiliary magnet and a second auxiliary magnet arranged to face each other across the opening.
The sputtering apparatus according to any one of claims 1 to 6, characterized in that the high-frequency electromagnetic field generation unit is an inductively coupled high-frequency antenna.
The sputtering apparatus according to any one of claims 1 to 7, characterized in that one of the first main magnetic field generating unit and the second main magnetic field generating unit comprises one or more permanent magnets, with one pole of the one or more first permanent magnets facing the plasma generation region, and the other comprises one or more permanent magnets, with the other pole of the one or more second permanent magnets facing the plasma generation region.
The magnitude of the magnetic flux density component extending from the substrate holder side end of one of the first target holder and the second target holder to the substrate holder side end of the other target holder is 0.03T or greater, The sputtering apparatus according to any one of claims 1 to 8, characterized in that the magnitude of the magnetic flux density component extending from the end of the first target holder and the second target holder on the high-frequency electromagnetic field generation side to the end of the other target holder on the high-frequency electromagnetic field generation side is 0.015T or less.

Description

This invention relates to a sputtering apparatus that performs film formation by sputtering a target raw material with plasma and depositing it onto a substrate. Conventionally, attempts have been made to increase the density of the plasma generated near the target surface in sputtering equipment in order to increase the film deposition rate. Figure 10 shows a schematic configuration of an example of such a conventional sputtering equipment, as described in Patent Document 1. The sputtering apparatus 90 shown in Figure 10 comprises a first target holder 911 and a second target holder 912 that arrange two plate-shaped targets T1 and T2 facing each other with a wide gap between them on one side; a first main magnetic field generating unit 921 and a second main magnetic field generating unit 922, respectively, which are provided on opposite sides of targets T1 and T2 (on the back sides of the first target holder 911 and the second target holder 912) with a plasma generation region R between the first target holder 911 and the second target holder 912, and which generate a magnetic field (this magnetic field is called the "main magnetic field") near the surface of targets T1 and T2; and a substrate holder 96 arranged on the wide-spaced side of the plasma generation region R. The sputtering apparatus 90 further comprises a first auxiliary magnetic field generation unit 931 and a second auxiliary magnetic field generation unit 932. The first auxiliary magnetic field generation unit 931 consists of a first-first auxiliary magnet 9311 provided at the end of the first target holder 911 near the substrate holder 96, and a first-second auxiliary magnet 9312 provided at the end of the second target holder 912 near the substrate holder 96. It generates a first auxiliary magnetic field directed from the first-first auxiliary magnet 9311 to the first-second auxiliary magnet 9312. The second auxiliary magnetic field generation unit 932 consists of a second-first auxiliary magnet 9321 provided at the end of the first target holder 911 opposite to the substrate holder 96, and a second-second auxiliary magnet 9322 provided at the end of the second target holder 912 opposite to the substrate holder 96. It generates a second auxiliary magnetic field directed from the second-first auxiliary magnet 9321 to the second-second auxiliary magnet 9322. Furthermore, the sputtering apparatus 90 includes two grounding electrodes 98 positioned on the sides of each of the first target holder 911 and the second target holder 912, flanking them; a DC power supply 94 that generates an electric field within the plasma generation region R by applying a voltage between each of the first target holder 911 and the second target holder 912 and the grounding electrodes 98; and a plasma raw material gas supply unit 95 that supplies a plasma raw material gas (e.g., Ar gas) into the plasma generation region R. All of the components of the sputtering apparatus 90 described above, except for the DC power supply 94, are housed within the vacuum vessel 99. In this sputtering apparatus 90, plasma is generated when atoms or molecules of the plasma raw material gas supplied from the plasma raw material gas supply unit 95 to the plasma generation region R are ionized into positive ions and electrons by the electric field and main magnetic field generated within the plasma generation region R. Then, on the surfaces of targets T1 and T2, the trajectories of the positive ions are bent toward the first target holder 911 and the second target holder 912 by the main magnetic field, and the positive ions incident on the surfaces of targets T1 and T2, causing targets T1 and T2 to be sputtered. Because the surfaces of targets T1 and T2 are tilted so that they face the substrate holder 96, the sputtered particles thus generated mainly fly toward the substrate holder 96 and deposit on the surface of the substrate S held by the substrate holder 96. This creates a film on the surface of the substrate S made of the materials of targets T1 and T2. When positive ions and electrons generated within the plasma generation region R fly toward the substrate holder 96 or the opposite side, their direction of travel is bent by the Lorentz force acting on them from the first or second auxiliary magnetic field, causing them to return to the plasma generation region R. As a result, in this sputtering apparatus 90, positive ions and electrons are confined within the plasma generation region R, and the plasma density within the plasma generation region R can be increased. Japanese Patent Publication No. 2008-127582 A schematic diagram showing a first embodiment of the sputtering apparatus according to the present invention.A schematic diagram showing a second embodiment of the sputtering apparatus according to the present invention.A plan view showing the configuration for supplying high-frequency current to the inductively coupled antenna 27 of the sputtering apparatus of the second embo