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JP-7857112-B2 - Radiation detector

JP7857112B2JP 7857112 B2JP7857112 B2JP 7857112B2JP-7857112-B2

Inventors

  • 水谷 文昭

Assignees

  • キヤノン株式会社

Dates

Publication Date
20260512
Application Date
20220214

Claims (17)

  1. A first component for detecting radiation, A second member located around the first member, A third member having a first opening that overlaps with at least a portion of a first region projected onto the first member in a plan view including the first member and the second member, The system includes a fourth member having a second opening that overlaps with at least a portion of the first region in the plan view, and having a higher thermal conductivity than the third member, The first member includes a plurality of pixels for forming an image based on the radiation, The second component includes peripheral circuits including a signal processing circuit and input/output terminals. The first member and the second member are in contact with each other or have an integral structure. The third member has a structure in which a penetrating portion is positioned in a third region that overlaps with the fourth member, outside the second region where the second member is projected in the plan view. The aforementioned through-hole is connected to the fourth member, connected to the second member by a heat-conducting member, and has a higher thermal conductivity than the third member . A detector characterized by the following features .
  2. The aforementioned radiation is an electron beam, The detector according to claim 1 , characterized in that the region formed by the first aperture is a vacuum.
  3. The detector according to claim 1 or 2 , characterized in that the first member has a thickness of at least 10 μm or more and 100 μm or less.
  4. The detector according to claim 3 , characterized in that the first member has a thickness of at least 25 μm or more and 75 μm or less in some part.
  5. The detector according to any one of claims 1 to 4 , characterized in that the heat conducting member is a conductor and is connected to a ground electrode and fixed at a constant potential.
  6. The detector according to any one of claims 1 to 5 , characterized in that the heat conducting member is a heat conducting wire or bonding wire, and its material is gold, silver, copper, aluminum, or an alloy thereof.
  7. The detector according to any one of claims 1 to 6 , characterized in that the heat conductive member is connected to a wiring layer included in the semiconductor layer of the second member.
  8. The detector according to any one of claims 1 to 7 , characterized in that the surface of the second member to which each of the heat conductive members is connected and the surface of the through portion are at the same height.
  9. The detector according to any one of claims 1 to 8 , characterized in that the through-hole is made of a thermal conductor or conductive material and comprises at least a portion of gold, tungsten, copper, titanium, tantalum, aluminum, ruthenium, or carbon graphite.
  10. The first region, the second region, and the third region each have a rectangular outer perimeter in the plan view, The detector according to any one of claims 1 to 9 , characterized in that the through portion is located on the outer circumference of two of the four outer circumferences of the third region that are closer in distance to the outer circumference of the first region.
  11. The detector according to any one of claims 1 to 10 , characterized in that the third member is a printed circuit board or a ceramic substrate.
  12. The detector according to any one of claims 1 to 11 , characterized in that the second member, the third member, and the fourth member are each connected to other members by adhesive, grease, gel, solder, or die bond material.
  13. The detector according to any one of claims 1 to 12, characterized in that the third member is detachably connected to the fourth member, or the fourth member is detachably connected to other members on the side opposite to the third member with respect to the fourth member.
  14. The detector according to any one of claims 1 to 13 , characterized in that the second member is connected to the third member or the fourth member.
  15. The detector according to any one of claims 1 to 14 , characterized in that the first member includes silicon, germanium, or cadmium.
  16. A detector according to any one of claims 1 to 15 , A radiation source that generates the aforementioned radiation, A radiation detection device having a detector and a control unit for controlling the radiation source.
  17. A detector according to any one of claims 1 to 15 , A detection system having a processing circuit for processing signals from the detector.

Description

This invention relates to a radiation detector. In detectors using CMOS image sensors and the like, the semiconductor layer capable of directly detecting electrons may experience a decrease in detection accuracy when electrons penetrate deep into the layer, leading to crosstalk and the generation of secondary electrons. To suppress this decrease in detection accuracy, thinning the semiconductor layer is effective. Patent Document 1 discloses a detector structure in which the detection region is thinner than the surrounding region. Patent Document 2 discloses a detector structure equipped with a mechanical support layer to easily provide a thinned structure. Furthermore, Patent Document 3 discloses a structure in which a thermal conductor is connected to the back surface of the detector, improving cooling performance by increasing the surface area of the thermal conductor while ensuring the strength of the detector. Japanese Patent Publication No. 2019-087640International Publication No. 2019/078291Japanese Patent Publication No. 2013-182923 This is a plan view configuration diagram of the detector according to the first embodiment.This is a cross-sectional view of the detector according to the first embodiment.This is a plan view configuration diagram of the detector according to the first embodiment.This is a cross-sectional view of the detector according to the first embodiment.This is a cross-sectional view of the detector according to the second embodiment.This is a cross-sectional view of the detector according to the third embodiment.This is a cross-sectional view of the detector according to the fourth embodiment.This is a cross-sectional view of the detector according to the fifth embodiment.This is a cross-sectional view of a detector according to a modified example of the fifth embodiment.This is a cross-sectional view of a detector according to a modified example of the fifth embodiment.This is a cross-sectional view of the detector according to the sixth embodiment.This is a plan view configuration diagram of the detector according to the seventh embodiment.This is a plan view configuration diagram of the detector according to the seventh embodiment.This is a cross-sectional view of the detector according to the eighth embodiment.This is a schematic diagram of the radiation imaging device according to the ninth embodiment.This is a schematic diagram of the photoelectric conversion device according to the 10th embodiment. The following description will refer to the drawings to explain embodiments for carrying out the present invention, but this invention is not limited to the following embodiments. In the following description and drawings, common reference numerals are used for components common to multiple drawings. Therefore, common components will be explained by referring to multiple drawings, and explanations of components with common reference numerals will be omitted as appropriate. Alternatively, multiple embodiments will be described, but explanations will be omitted where one embodiment may be the same as another embodiment. <First Embodiment> A first embodiment of the present invention will be described below with reference to Figures 1A to 2A. Figures 1A, 1B, and 1C show the configuration diagrams of the detector 1 according to this embodiment. Figure 1A shows a top view of the detector 1 as seen from the top side. Figure 1B shows a cross-sectional view of the detector 1 along the line A-A' in Figure 1A. Figure 1C shows a bottom view of the detector 1 as seen from the bottom side. Figure 2A shows an enlarged cross-sectional view of the right side portion of the detector 1 in Figure 1B. As shown in Figures 1A, 1B, and 1C, the detector 1 comprises a first member 13, a second member 14, a third member 21, a fourth member 22, a heat conductive member 30, and a through-hole 31. The detector 1 is an image sensor incorporating a semiconductor layer 15 that includes a first member 13 for detecting radiation and a second member 14 for processing the detected signal. The first member 13 and the second member 14 are composed of a semiconductor layer 15. The semiconductor layer 15 is preferably a single-crystal layer of silicon, germanium, or the like, but it may also be a polycrystalline layer. Furthermore, it is desirable that the first member 13 and the second member 14 have an integrated structure manufactured from a semiconductor substrate. The planar shapes of the first member 13 and the second member 14 and their positional relationship are not particularly limited, but for example, the second member 14 is located around the first member 13 and is provided to have a rectangular annular planar shape around the first member 13, which has a rectangular planar shape. In a planar view including both the first member 13 and the second member 14, the region onto which the first member 13 is projected is defined as the first region 10, and the region onto which the second member 14 is projected i