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JP-7857330-B2 - Photoelectric conversion element, photoelectric conversion module, and photoelectric conversion system

JP7857330B2JP 7857330 B2JP7857330 B2JP 7857330B2JP-7857330-B2

Inventors

  • 木本 賢治

Assignees

  • シャープエネルギーソリューション株式会社

Dates

Publication Date
20260512
Application Date
20240229

Claims (19)

  1. First electrode and second electrode, A photoelectric conversion layer is provided between the first electrode and the second electrode, The device comprises a hole transport layer provided between the first electrode and the photoelectric conversion layer, or between the second electrode and the photoelectric conversion layer, The hole transport layer comprises a hole transport molecule and a Cs atom . The photoelectric conversion layer comprises a perovskite compound and contains Cs atoms. A photoelectric conversion element characterized in that the number density of Cs atoms in the photoelectric conversion layer is greater in the region close to the hole transport layer than in the region far from the hole transport layer.
  2. First electrode and second electrode, A photoelectric conversion layer is provided between the first electrode and the second electrode, The device comprises a hole transport layer provided between the first electrode and the photoelectric conversion layer, or between the second electrode and the photoelectric conversion layer, The hole transport layer comprises a hole transport molecule, a Cs atom, and a crown ether molecule. The photoelectric conversion layer comprises a perovskite compound, The photoelectric conversion element is characterized in that the crown ether molecule is a Dibenzo-21-crown-7 molecule.
  3. A photoelectric conversion element according to claim 1, The hole transport layer does not contain at least one of tBP and LiTFSI. A photoelectric conversion element characterized in that the molar ratio of the Cs atoms to the hole-transporting molecules in the hole transport layer is 0.01 or more and 1.00 or less.
  4. A photoelectric conversion element according to claim 2, The hole transport layer does not include at least one of tBP and LiTFSI . A photoelectric conversion element characterized in that the molar ratio of the Cs atoms to the hole-transporting molecules in the hole transport layer is 0.01 or more and 1.00 or less.
  5. A photoelectric conversion element according to any one of claims 1 to 4 , The photoelectric conversion element is characterized in that the photoelectric conversion layer includes one or more selected from the group consisting of Pb and Sn, and one or more selected from the group consisting of I, Br, and Cl.
  6. A photoelectric conversion element according to claim 1 or 2, A photoelectric conversion element characterized in that the molar ratio of Cs atoms to hole-transporting molecules in the hole transport layer is 0.01 or more and 1.00 or less.
  7. A photoelectric conversion element according to any one of claims 1 to 4 , The photoelectric conversion element is characterized in that the hole transporting molecule is one of spiro-OMeTAD, PTAA, P3HT, poly-TPD, and PVK.
  8. A photoelectric conversion element according to claim 1 or 3, The photoelectric conversion element is characterized in that the hole transport layer further contains crown ether molecules.
  9. A photoelectric conversion element according to claim 8 , The photoelectric conversion element is characterized in that the crown ether molecule is a Dibenzo-21-crown-7 molecule.
  10. A photoelectric conversion element according to claim 2 or 4 , A photoelectric conversion element characterized in that the molar ratio of the crown ether molecules to the Cs atoms in the hole transport layer is 0.9 or more and 1.1 or less.
  11. A photoelectric conversion element according to claim 8 , A photoelectric conversion element characterized in that the molar ratio of the crown ether molecules to the Cs atoms in the hole transport layer is 0.9 or more and 1.1 or less.
  12. A photoelectric conversion element according to claim 2 or 4 , The photoelectric conversion element is characterized in that the photoelectric conversion layer contains Cs.
  13. A photoelectric conversion element according to claim 12 , A photoelectric conversion element characterized in that the number density of Cs atoms in the photoelectric conversion layer is greater in the region close to the hole transport layer than in the region far from the hole transport layer.
  14. A photoelectric conversion element according to claim 1 or 3 , A photoelectric conversion element characterized in that, in the photoelectric conversion layer, the number density of Cs atoms in the region close to the hole transport layer is 1.2 times or more than the number density of Cs atoms in the region far from the hole transport layer.
  15. A photoelectric conversion element according to claim 12, A photoelectric conversion element characterized in that, in the photoelectric conversion layer, the number density of Cs atoms in the region close to the hole transport layer is 1.2 times or more than the number density of Cs atoms in the region far from the hole transport layer.
  16. A photoelectric conversion element according to claim 1 or 3 , A photoelectric conversion element characterized in that, in the photoelectric conversion layer, the number density of Cs atoms in the region close to the hole transport layer is 10 times or more than the number density of Cs atoms in the region far from the hole transport layer.
  17. A photoelectric conversion element according to claim 12 , A photoelectric conversion element characterized in that, in the photoelectric conversion layer, the number density of Cs atoms in the region close to the hole transport layer is 10 times or more than the number density of Cs atoms in the region far from the hole transport layer.
  18. A photoelectric conversion module having at least one photoelectric conversion element, wherein the photoelectric conversion element is the photoelectric conversion element described in any one of claims 1 to 4 .
  19. A photoelectric conversion system characterized by comprising the photoelectric conversion module and control circuit described in claim 18 .

Description

This disclosure relates to photoelectric conversion elements, photoelectric conversion modules, and photoelectric conversion systems using perovskite compounds. Typically, the hole transport layer of a photoelectric conversion element contains Lithium Bis(trifluoromethanesulfonyl)imid (hereinafter referred to as LiTFSI) and 4-tert-Butylpyridine (hereinafter referred to as tBP) as doping materials (for example, Patent Document 1). Japanese Patent Publication No. 2017-50426 This is a schematic cross-sectional view of the photoelectric conversion element related to this disclosure.This is a schematic cross-sectional view showing a modified photoelectric conversion element.This is a plan view of the photoelectric conversion module related to this disclosure.Figure 3 is a cross-sectional view of the photoelectric conversion module shown.Figure 3 is a circuit diagram of the photoelectric conversion module.This is a schematic diagram of the photoelectric conversion system related to this disclosure.This is a schematic cross-sectional view of the light-emitting element relating to this disclosure. [First Embodiment] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. Figure 1 shows one embodiment of the present disclosure and is a schematic cross-sectional view of the photoelectric conversion element 10. As shown in Figure 1, the photoelectric conversion element 10 is formed on a substrate 20 and has a first electrode 11, an electron transport layer 12, a photoelectric conversion layer 13, a hole transport layer 14, and a second electrode 15. The first electrode 11, electron transport layer 12, photoelectric conversion layer 13, hole transport layer 14, and second electrode 15 are stacked in this order from the side closest to the substrate 20. Note that the stacking order does not necessarily have to be this order (forward structure type); the order of the electron transport layer 12 and the hole transport layer 14 may be reversed (reverse structure type). That is, the hole transport side may be on the bottom and the electron transport side on the top. In this disclosure, the electron transport layer is described as a forward structure type, but in the case of a reverse structure type, it can be replaced with the hole transport layer, as long as it does not contradict the original structure. Furthermore, the positions of the electron transport layer 12 and the hole transport layer 14 may be swapped. Also, the electron transport layer 12 is not essential in the photoelectric conversion element 10 and can be omitted. The substrate 20 is a substrate on which the photoelectric conversion element 10 is mounted. In this disclosure, the substrate 20 is not included in the description of the photoelectric conversion element 10, but it may be included in the photoelectric conversion element 10. The substrate 20 is also called a base or substrate, and may be the same as or include those. The substrate 20 may be hard and highly rigid, or it may be flexible and less rigid. The substrate 20 is preferably light-transmitting; for example, a resin film such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polyimide, or glass can be used. Note that light transmittance means that light is transmitted, but it does not exclude anything that reflects or absorbs even a little light. It is sufficient that it is provided on the light-receiving side or light-emitting side of the element and can transmit light appropriately; it can be considered synonymous with being provided on the light-receiving side or light-emitting side of the element. Therefore, it can be said that it is light-transmitting if it is provided at least on the light-receiving side of the photoelectric conversion element 10 (or the light-emitting side of the light-emitting element 10A described later). The first electrode 11 is a conductive material. Preferably, a light-transmitting conductive material is used for the first electrode 11. For example, transparent conductive materials such as aluminum-doped zinc oxide (AZO), indium zinc oxide (IZO), gallium-doped zinc oxide (GZO), tin oxide (SnO2), fluorine-doped tin oxide (FTO), and indium tin oxide (ITO) can be used. The first electrode 11 can be formed by known methods such as sputtering or vapor deposition, and the film thickness can be, for example, 30 nm to 1000 nm. The electron transport layer 12 is a layer capable of transporting electrons. It is self-evident that, as long as the photoelectric conversion element 10 (or the light-emitting element 10A described later) is functioning, the layer located on the negative electrode side of these elements will have an electron transport function, and can therefore be designated as the electron transport layer. The negative electrode side can be rephrased as the electron transport side. The electron transport layer 12 can be made of tin oxide, titanium oxide, zinc oxide, indium oxide, or mixtu