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JP-7857455-B2 - Processing method, method for manufacturing a semiconductor device, processing apparatus, and program

JP7857455B2JP 7857455 B2JP7857455 B2JP 7857455B2JP-7857455-B2

Inventors

  • 宮田 翔馬
  • 中谷 公彦
  • 早稲田 崇之
  • 橋本 良知

Assignees

  • 株式会社KOKUSAI ELECTRIC

Dates

Publication Date
20260512
Application Date
20250213

Claims (20)

  1. (a) A step of forming a first adsorption suppression layer on the first surface by supplying a first precursor to a substrate having a first surface and a second surface, (b) A step of supplying a reactant to the substrate to form an adsorption promoting layer on the second surface, (c) A step of forming a second adsorption-inhibiting layer on the surface of the adsorption-promoting layer by supplying a second precursor having a molecular structure different from the first precursor to the substrate, The process involves supplying a film-forming material to the substrate after (d ) and ( c) has been performed to form a film on the first surface, (f) Before performing (a), a step of reducing the adsorption sites on the first surface, A processing method having the following characteristics.
  2. (d) The processing method according to claim 1, wherein the action of the film-forming material neutralizes the action of the first adsorption-suppressing layer, thereby forming the film on the first surface.
  3. The processing method according to claim 1, further comprising the step of removing the first adsorption suppression layer and disabling the effect of the first adsorption suppression layer after performing (e ) and ( c) and before performing (d).
  4. The processing method according to any one of claims 1 to 3, wherein the adsorption suppression effect of the first adsorption suppression layer is weaker than the adsorption suppression effect of the second adsorption suppression layer under the same conditions.
  5. The processing method according to any one of claims 1 to 3, wherein the first adsorption suppression layer is more easily desorbed than the second adsorption suppression layer under the same conditions.
  6. The processing method according to any one of claims 1 to 3, wherein the reactivity between the film-forming material and the first adsorption-suppressing layer is higher than the reactivity between the film-forming material and the second adsorption-suppressing layer under the same conditions.
  7. (b) The treatment method according to any one of claims 1 to 3, wherein an oxygen-containing layer is formed as the adsorption-promoting layer.
  8. (b) The processing method according to claim 7, wherein the oxygen-containing layer is deposited on the second surface.
  9. (b) The treatment method according to claim 7, wherein the second surface is oxidized.
  10. The processing method according to claim 7, wherein the thickness of the adsorption-promoting layer is 0.5 nm or more and 10 nm or less.
  11. The processing method according to any one of claims 1 to 3 , wherein in (f), the formation of a second adsorption suppression layer on the first surface is suppressed by reducing the adsorption sites on the first surface in (c).
  12. (f) The processing method according to any one of claims 1 to 3 , wherein the substrate is annealed at a temperature of 200°C or more and 500°C or less.
  13. The processing method according to any one of claims 1 to 3, wherein the adsorption site on the first surface includes an OH termination.
  14. (d) In the first surface, a film made of a different material from the adsorption promoting layer is formed. The processing method according to any one of claims 1 to 3, further comprising the step of removing the adsorption-promoting layer and the second adsorption-inhibiting layer on the second surface by exposing the film on the first surface and the adsorption-promoting layer and the second adsorption-inhibiting layer on the second surface to an etching substance after performing (g) and (d).
  15. (b) In the second surface, a silicon oxide layer is formed as the adsorption promoting layer. (d) In the first surface, a silicon carbide film is formed as the film. (g) The treatment method according to claim 14, wherein hydrogen fluoride is used as the etching substance.
  16. The processing method according to claim 14, further comprising the step of modifying the film on the first surface after performing (h) and (g) to change it into a film with a different material from the aforementioned film.
  17. The processing method according to claim 15, further comprising the step of oxidizing the film on the first surface after performing (h) and (g) to change it into a silicon oxide film.
  18. The processing method according to any one of claims 1 to 3, wherein the first surface includes an oxygen-containing film, and the second surface includes a film different from the oxygen-containing film.
  19. The processing method according to any one of claims 1 to 3, wherein the first surface comprises at least one of a silicon oxide film, a silicon acid carbide film, and an aluminum oxide film, and the second surface comprises at least one of a silicon film, a silicon nitride film, and a metal film.
  20. (a) A step of forming a first adsorption suppression layer on the first surface by supplying a first precursor to a substrate having a first surface and a second surface, (b) A step of supplying a reactant to the substrate to form an adsorption promoting layer on the second surface, (c) A step of forming a second adsorption-inhibiting layer on the surface of the adsorption-promoting layer by supplying a second precursor having a molecular structure different from the first precursor to the substrate, The process involves supplying a film-forming material to the substrate after (d ) and ( c) has been performed to form a film on the first surface, (f) Before performing (a), a step of reducing the adsorption sites on the first surface, A method for manufacturing a semiconductor device having

Description

This disclosure relates to processing methods, methods for manufacturing semiconductor devices, processing apparatuses, and programs. As semiconductor devices scale, processing dimensions are becoming smaller and processes are becoming more complex. Achieving fine and complex processing requires repeated high-precision patterning processes, leading to increased costs in semiconductor device manufacturing. Recently, selective growth has attracted attention as a method that offers high precision and cost reduction. Selective growth is a technique for selectively growing a film on the surface of a desired substrate from two or more exposed substrates on the substrate surface (see, for example, Patent Document 1). Japanese Patent Publication No. 2021-27067 Figure 1 is a schematic diagram of a vertical processing furnace of a substrate processing apparatus preferably used in one embodiment of the present disclosure, and shows the processing furnace 202 portion in a vertical cross-sectional view.Figure 2 is a schematic diagram of a vertical processing furnace of a substrate processing apparatus preferably used in one embodiment of the present disclosure, and shows the processing furnace 202 portion in a cross-sectional view along line A-A in Figure 1.Figure 3 is a schematic configuration diagram of a controller 121 of a substrate processing apparatus preferably used in one embodiment of the present disclosure, and is a block diagram showing the control system of the controller 121.Figures 4(a) to 4(e) are schematic cross-sectional views showing the surface portion of a wafer at each step in the selective growth process of the first embodiment of this disclosure. Figure 4(a) is a schematic cross-sectional view showing the surface portion of a wafer with a silicon oxide film (SiO film) as the first substrate and a silicon nitride film (SiN film) as the second substrate exposed. Figure 4(b) is a schematic cross-sectional view showing the surface portion of a wafer after step A has been performed to form a first adsorption suppression layer on the surface of the SiO film. Figure 4(c) is a schematic cross-sectional view showing the surface portion of a wafer after step B has been performed to form an adsorption promotion layer on the surface of the SiN film. Figure 4(d) is a schematic cross-sectional view showing the surface portion of a wafer after step C has been performed to form a second adsorption suppression layer on the surface of the adsorption promotion layer. Figure 4(e) is a schematic cross-sectional view showing the surface portion of a wafer after step D has been performed from the state in Figure 4(d) to form a film on the surface of the SiO film.Figures 5(a) to 5(f) are schematic cross-sectional views showing the surface portion of the wafer at each step in the selective growth process of the second embodiment of the present disclosure. Figures 5(a) to 5(d) are similar to Figures 4(a) to 4(d). Figure 5(e) is a schematic cross-sectional view showing the surface portion of the wafer after step E has been performed to remove the first adsorption suppression layer from the surface of the SiO film. Figure 5(f) is a schematic cross-sectional view showing the surface portion of the wafer after step D has been performed from the state in Figure 5(e) to form a film on the surface of the SiO film.Figures 6(a) to 6(f) are schematic cross-sectional views showing the surface portion of the wafer at each step in the selective growth process of the second embodiment of this disclosure. Figures 6(a) to 6(d) are similar to Figures 4(a) to 4(d). Figure 6(e) is a schematic cross-sectional view showing the surface portion of the wafer after the effect of the first adsorption suppression layer has been neutralized by performing step E from the state shown in Figure 6(d). Figure 6(f) is a schematic cross-sectional view showing the surface portion of the wafer after a film has been formed on the surface of the SiO film by performing step D from the state shown in Figure 6(e).Figures 7(a) to 7(f) are schematic cross-sectional views showing the surface portion of the wafer at each step in the selective growth of Modification 1 of the present disclosure. Figure 7(a) is a schematic cross-sectional view showing the surface portion of the wafer with the SiO film as the first substrate and the SiN film as the second substrate exposed, and showing the adsorption sites on the surface of the SiO film. Figure 7(b) is a schematic cross-sectional view showing the surface portion of the wafer after the number of adsorption sites on the surface of the SiO film has been reduced by performing step F from the state in Figure 7(a). Figure 7(c) is a schematic cross-sectional view showing the surface portion of the wafer after the first adsorption suppression layer has been formed on the surface of the SiO film by performing step A from the state in Figure 7(b). Figures 7(d) to 7(f) are similar to Figures 4(c) to 4(e).Figures 8(a) to 8(f) are sch