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JP-7857512-B1 - Semiconductor equipment

JP7857512B1JP 7857512 B1JP7857512 B1JP 7857512B1JP-7857512-B1

Abstract

[Problem] To provide a logic circuit using a resistive element and a thin-film transistor fabricated using an oxide semiconductor layer with controlled electrical properties, and a semiconductor device using the logic circuit. [Solution] Silane ( SiH4 ) is applied to the oxide semiconductor layer 905 applied to the resistive element 354. Furthermore, a silicon nitride layer 910 formed by a plasma CVD method using a gas containing hydrogen compounds such as ammonia ( NH3 ) is provided in direct contact with the oxide semiconductor layer 906 applied to the thin-film transistor 355, and the silicon nitride layer 910 is provided via a silicon oxide layer 909 that functions as a barrier layer. Hydrogen is introduced into the oxide semiconductor layer 906 at a higher concentration than in the resistive element 3. The resistance of the oxide semiconductor layer 905 applied to 54 is lower than the resistance of the oxide semiconductor layer 906 applied to the thin-film transistor 355. [Selection Diagram] Figure 11

Inventors

  • 小山 潤
  • 坂田 淳一郎
  • 丸山 哲紀
  • 井本 裕己
  • 淺野 裕治
  • 肥塚 純一

Assignees

  • 株式会社半導体エネルギー研究所

Dates

Publication Date
20260512
Application Date
20260304
Priority Date
20081224

Claims (7)

  1. A pixel section having multiple pixels, The pixel section has a protection circuit connected via a source line, The protection circuit is supplied with the high power potential from the wiring that is supplied with the high power potential. The protection circuit has a resistive element, The resistive element has a first oxide semiconductor layer, In a top view, the first oxide semiconductor layer has a curved shape. One terminal of the resistor element is connected to the source line. When the other terminal of the resistive element is electrically connected to the wiring, the high power supply potential is supplied to the other terminal of the resistive element. At least one of the plurality of pixels has a first transistor, a second transistor, and a light-emitting element. The first transistor has a second oxide semiconductor layer, The second transistor has a third oxide semiconductor layer, Either the source or the drain of the first transistor is connected to the source line. The source or drain of the first transistor, the other of which is connected to the gate of the second transistor, Either the source or the drain of the second transistor is connected to the first electrode of the light-emitting element. The high power supply potential is supplied to the other of the source or drain of the second transistor. Each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises In, Ga, and Zn. Semiconductor equipment.
  2. A pixel section having multiple pixels, The pixel section has a protection circuit connected via a source line, The protection circuit is supplied with the high power potential from the wiring that is supplied with the high power potential. The protection circuit has a resistive element, The resistive element has a first oxide semiconductor layer, In a top view, the first oxide semiconductor layer has a meander shape. One terminal of the resistor element is connected to the source line. When the other terminal of the resistive element is electrically connected to the wiring, the high power supply potential is supplied to the other terminal of the resistive element. At least one of the plurality of pixels has a first transistor, a second transistor, and a light-emitting element. The first transistor has a second oxide semiconductor layer, The second transistor has a third oxide semiconductor layer, Either the source or the drain of the first transistor is connected to the source line. The source or drain of the first transistor, the other of which is connected to the gate of the second transistor, Either the source or the drain of the second transistor is connected to the first electrode of the light-emitting element. The high power supply potential is supplied to the other of the source or drain of the second transistor. Each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises In, Ga, and Zn. Semiconductor equipment.
  3. A pixel section having multiple pixels, The pixel unit has a protection circuit connected via a source line, The protection circuit is supplied with the high power potential from the wiring that is supplied with the high power potential. The protection circuit has a resistive element, The resistive element has a first oxide semiconductor layer, In a top view, the first oxide semiconductor layer has a meandering shape. One terminal of the resistor element is connected to the source line. When the other terminal of the resistive element is electrically connected to the wiring, the high power supply potential is supplied to the other terminal of the resistive element. At least one of the plurality of pixels has a first transistor, a second transistor, and a light-emitting element. The first transistor has a second oxide semiconductor layer, The second transistor has a third oxide semiconductor layer, Either the source or the drain of the first transistor is connected to the source line. The source or drain of the first transistor, the other of which is connected to the gate of the second transistor, Either the source or the drain of the second transistor is connected to the first electrode of the light-emitting element. The high power supply potential is supplied to the other of the source or drain of the second transistor. Each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises In, Ga, and Zn. Semiconductor equipment.
  4. A pixel section having multiple pixels, The pixel section has a protection circuit connected via a source line, The protection circuit is supplied with the high power potential from the wiring that is supplied with the high power potential . The protection circuit has a resistive element, The resistive element has a first oxide semiconductor layer, In a top view, the first oxide semiconductor layer has a curved shape. One terminal of the resistor element is connected to the source line. When the other terminal of the resistive element is electrically connected to the wiring, the high power supply potential is supplied to the other terminal of the resistive element. At least one of the plurality of pixels has a first transistor, a second transistor, and a light-emitting element. The first transistor has a second oxide semiconductor layer, The second transistor has a third oxide semiconductor layer, Either the source or the drain of the first transistor is connected to the source line. The source or drain of the first transistor, the other of which is connected to the gate of the second transistor, Either the source or the drain of the second transistor is connected to the first electrode of the light-emitting element. The high power supply potential is supplied to the other of the source or drain of the second transistor. Each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises In, Ga, and Zn. The region of the second oxide semiconductor layer that does not overlap with the gate electrode of the first transistor has a region that is in contact with the source electrode or drain electrode of the first transistor. The region of the third oxide semiconductor layer that does not overlap with the gate electrode of the second transistor has a region that is in contact with the source electrode or drain electrode of the second transistor. Semiconductor equipment.
  5. A pixel section having multiple pixels, The pixel section has a protection circuit connected via a source line, The protection circuit is supplied with the high power potential from the wiring that is supplied with the high power potential. The protection circuit has a resistive element, The resistive element has a first oxide semiconductor layer, In a top view, the first oxide semiconductor layer has a meander shape. One terminal of the resistor element is connected to the source line. When the other terminal of the resistive element is electrically connected to the wiring, the high power supply potential is supplied to the other terminal of the resistive element. At least one of the plurality of pixels has a first transistor, a second transistor, and a light-emitting element. The first transistor has a second oxide semiconductor layer, The second transistor has a third oxide semiconductor layer, Either the source or the drain of the first transistor is connected to the source line. The source or drain of the first transistor, the other of which is connected to the gate of the second transistor, Either the source or the drain of the second transistor is connected to the first electrode of the light-emitting element. The high power supply potential is supplied to the other of the source or drain of the second transistor. Each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises In, Ga, and Zn. The region of the second oxide semiconductor layer that does not overlap with the gate electrode of the first transistor has a region that is in contact with the source electrode or drain electrode of the first transistor. The region of the third oxide semiconductor layer that does not overlap with the gate electrode of the second transistor has a region that is in contact with the source electrode or drain electrode of the second transistor. Semiconductor equipment.
  6. A pixel section having multiple pixels, The pixel section has a protection circuit connected via a source line, The protection circuit is supplied with the high power potential from the wiring that is supplied with the high power potential. The protection circuit has a resistive element, The resistive element has a first oxide semiconductor layer, In a top view, the first oxide semiconductor layer has a meandering shape. One terminal of the resistor element is connected to the source line. When the other terminal of the resistive element is electrically connected to the wiring, the high power supply potential is supplied to the other terminal of the resistive element. At least one of the plurality of pixels has a first transistor, a second transistor, and a light-emitting element. The first transistor has a second oxide semiconductor layer, The second transistor has a third oxide semiconductor layer, Either the source or the drain of the first transistor is connected to the source line. The source or drain of the first transistor, the other of which is connected to the gate of the second transistor, Either the source or the drain of the second transistor is connected to the first electrode of the light-emitting element. The high power supply potential is supplied to the other of the source or drain of the second transistor. Each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises In, Ga, and Zn. The region of the second oxide semiconductor layer that does not overlap with the gate electrode of the first transistor has a region that is in contact with the source electrode or drain electrode of the first transistor. The region of the third oxide semiconductor layer that does not overlap with the gate electrode of the second transistor has a region that is in contact with the source electrode or drain electrode of the second transistor. Semiconductor equipment.
  7. In any one of claims 1 to 6 , The protection circuit is provided between the source line drive circuit and the pixel section. Semiconductor equipment.

Description

The present invention is a drive circuit composed of an element formed using a metal oxide exhibiting semiconductor properties. This invention relates to semiconductor devices that utilize the said drive circuit. Note that a semiconductor device refers to any device that can function by utilizing semiconductor properties; display devices, semiconductor circuits, and electronic devices are all considered semiconductor devices. Metal oxides exist in a wide variety of forms and are used in various applications. Indium oxide is a well-known material and is used as a transparent electrode material required in liquid crystal displays and other applications. Some metal oxides exhibit semiconductor properties. These semiconductor-like metal oxides are a type of compound semiconductor. A compound semiconductor is a semiconductor formed by the ionic bonding of two or more atoms. Generally, metal oxides are insulators. However, depending on the combination of elements that make up the metal oxide, it is known that the electrostatic attraction is weak, resulting in semiconductor properties. For example, among metal oxides, tungsten oxide, tin oxide, indium oxide, and zinc oxide are known to exhibit semiconductor properties. Thin-film transistors using a transparent semiconductor layer composed of such metal oxides as the channel-forming region have been disclosed (Patent Documents 1 to 4). Non-patent document 1). By the way, metal oxides are known not only as monocrystalline oxides but also as multicrystalline oxides. For example, InGaO3 (ZnO) m (m: natural number), which has a homologous phase, is a known material. Non-Patent Documents 2 to 4). Furthermore, it has been confirmed that the above-mentioned In-Ga-Zn oxides can be applied as channel formation regions for thin-film transistors (Patent Document 5, Non-Patent Documents 5 and 6). Japanese Unexamined Patent Publication No. 198861/1986Japanese Patent Application Publication No. 8-264794Special Publication No. 11-505377Japanese Patent Publication No. 2000-150900Japanese Patent Publication No. 2004-103957 M. W. Prins, K. O. Grosse-Holz, G. Muller, J. F. M. Cillessen, J. B. Giesbers, R. P. Weening, and R. M. Wolf, "A ferroelectric transparent thin-film transistor", Appl. Phys. Lett. , 17 June 1996, Vol. 68 p. 3650-3652M. Nakamura, N. Kimizuka, and T. Mohri, "The Phase Relations in the In2O3-Ga2ZnO4-ZnO System at 1350°C", J. Solid State Chem. , 1991, Vol. 93, p. 298-315N. Kimizuka, M. Isobe, and M. Nakamura, “Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m=3,4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m=7,8,9, and 16) in the In2O3-ZnGa2O4-ZnO System", J. Solid State Chem. , 1995, Vol. 116, p. 170-178Masaki Nakamura, Noboru Kimizuka, Naohiko Mohri, and Mitsumasa Isobe, "Synthesis and Crystal Structure of Homologous Phase, InFeO3(ZnO)m (m: natural number) and its Isomorphic Compounds," Solid State Physics, 1993, Vol. 28, No. 5, pp. 317-327.K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor”, SCIENCE, 2003, Vol. 300, p. 1269-1272K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide "Semiconductors", NATURE, 2004, Vol. 432 p. 488-492 This figure shows an example of a semiconductor device configuration.This is a block diagram showing an example configuration of a drive circuit.(A) and (B) are circuit diagrams showing one example configuration of the drive circuit.This figure shows an example of a timing chart for a drive circuit.This is a circuit diagram showing one example configuration of a drive circuit.This is a circuit diagram showing one example configuration of a drive circuit.This is a block diagram showing an example configuration of a drive circuit.This is a layout diagram showing one example configuration of a drive circuit.This is a layout diagram showing one example configuration of a drive circuit.This is a layout diagram showing one example configuration of a drive circuit.(A) to (C) are diagrams showing an example configuration of a drive circuit.(A) and (B) are diagrams showing an example configuration of a drive circuit.(A) and (B) are diagrams showing an example configuration of a drive circuit.(A) and (B) are diagrams showing an example configuration of a drive circuit.(A) to (C) are diagrams showing an example of the manufacturing process for the drive circuit.(A) to (C) are diagrams showing an example of the manufacturing process for the drive circuit.This figure shows an example of a drive circuit configuration.(A) to (C) are diagrams showing an example of the manufacturing process for the drive circuit.(A) and (B) are diagrams showing examples of the manufacturing process for drive circuits.(A) and (B) are circuit diagrams showing an example configuration of a drive circuit, and