JP-WO2025041580-A5 -

Dates

Publication Date

20260511

Application Date

20240805

Description

For example, to reduce the grinding amount on both sides of wafer W1 , the grinding amount of the central part of the first surface Wa of wafer W1 (= T10 - Tc11 ) is made smaller than the grinding amount of the first surface Wa of wafer W2 (= T20 - T21 ). Similarly, the grinding amount of the central part of the second surface Wb of wafer W1 (= Tc11 - Tc12 ) is also made smaller than the grinding amount of the first surface Wa of wafer W2 (= T21 - T22 ). In this case, the grinding time on both sides of wafer W1 is balanced, and the grinding on both sides is easier to control. Furthermore, for example, when reducing the amount of grinding on one side of wafer W1 , the amount of grinding in the central part of the first surface Wa of wafer W1 (= T10 - Tc11 ) is made smaller than the amount of grinding in the first surface Wa of wafer W2 (= T20 - T21 ). Also, the amount of grinding in the central part of the second surface Wb of wafer W1 (= Tc11 - Tc12 ) is made the same as the amount of grinding in the first surface Wa of wafer W2 (= T21 - T22 ). In this case, the amount of wear on the grinding wheel 102 that grinds the first surface Wa of wafer W1 can be reduced. Here, the target thickness of the central part of the first surface Wa of wafer W1 after grinding is Tc 11 , and the target thickness of the outer periphery is Te 11. Also, the target thickness of the first surface Wa of wafer W2 after grinding is T 21. In this embodiment, the target thickness Tc 11 of the central part of wafer W1 after grinding is made larger than the target thickness T 21 of wafer W2 after grinding. As a result, the target thickness Te 11 of the outer periphery of wafer W1 after grinding is also larger than the target thickness T 21 of wafer W2 after grinding.