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KR-102961090-B1 - Multilayer reflective film attached substrate, reflective mask blank and reflective mask, and method for manufacturing a semiconductor device

KR102961090B1KR 102961090 B1KR102961090 B1KR 102961090B1KR-102961090-B1

Abstract

[Project] To obtain a multilayer reflective film-attached substrate capable of suppressing the reduction in reflectance of the multilayer reflective film to EUV light, with respect to a multilayer reflective film-attached substrate having a structure in which a protective film of a metal-containing material is disposed. [Solution] A multilayer reflective film attached substrate having a substrate, a multilayer reflective film on the substrate, and a protective film on the multilayer reflective film, wherein the protective film has a silicon-containing layer, a first layer, a second layer, and a third layer in that order on the multilayer reflective film, and the protective film contains metal and nitrogen, and when the nitrogen content of the first layer is N1, the nitrogen content of the second layer is N2, and the nitrogen content of the third layer is N3, N2 is greater than N1 and N3.

Inventors

  • 나까가와, 마사노리
  • 스즈끼, 코따
  • 키시다, 히비끼

Assignees

  • 호야 가부시키가이샤

Dates

Publication Date
20260507
Application Date
20221026
Priority Date
20211028

Claims (19)

  1. A substrate, a multilayer reflective film on the substrate, and a protective film on the multilayer reflective film, wherein the substrate is a multilayer reflective film attached substrate, and The above protective film has, on the above multilayer reflective film, a silicon-containing layer, a first layer, a second layer, and a third layer in this order, The above protective film comprises metal and nitrogen, and A multilayer reflective film attached substrate characterized in that, when the nitrogen content of the first layer is N1, the nitrogen content of the second layer is N2, and the nitrogen content of the third layer is N3, N2 is greater than N1 and N3.
  2. In paragraph 1, When the metal content of the first layer is set to M1, the metal content of the second layer is set to M2, and the metal content of the third layer is set to M3, (M3/(N3+M3)>M1/(N1+M1)>M2/(N2+M2)) A multilayer reflective film attached substrate characterized by satisfying the relationship.
  3. In paragraph 1 or 2, A multilayer reflective film attached substrate characterized in that the first, second, and third layers satisfy the relationship N2 > N1 ≥ N3.
  4. In paragraph 1 or 2, A multilayer reflective film attached substrate characterized in that the first, second, and third layers satisfy the relationship N2>N3>N1.
  5. In paragraph 1 or 2, A multilayer reflective film attached substrate characterized in that the metal is at least one selected from ruthenium (Ru), rhodium (Rh), and iridium (Ir).
  6. In paragraph 1 or 2, A multilayer reflective film-attached substrate characterized by the above protective film further comprising at least one additive element selected from thallium (Tl), hafnium (Hf), titanium (Ti), zirconium (Zr), manganese (Mn), indium (In), gallium (Ga), bismuth (Bi), tantalum (Ta), lead (Pb), silver (Ag), aluminum (Al), vanadium (V), niobium (Nb), tin (Sn), zinc (Zn), chromium (Cr), iron (Fe), antimony (Sb), tungsten (W), molybdenum (Mo), and copper (Cu).
  7. A reflective mask blank having a substrate, a multilayer reflective film on the substrate, a protective film on the multilayer reflective film, and an absorbent film on the protective film, and The above protective film has, on the above multilayer reflective film, a silicon-containing layer, a first layer, a second layer, and a third layer in this order, The above protective film comprises metal and nitrogen, and A reflective mask blank characterized in that, when the nitrogen content of the first layer is N1, the nitrogen content of the second layer is N2, and the nitrogen content of the third layer is N3, N2 is greater than N1 and N3.
  8. In Paragraph 7, When the metal content of the first layer is set to M1, the metal content of the second layer is set to M2, and the metal content of the third layer is set to M3, (M3/(N3+M3)>M1/(N1+M1)>M2/(N2+M2)) A reflective mask blank characterized by satisfying the relationship.
  9. In Article 7 or Article 8, A reflective mask blank characterized in that the first, second, and third layers satisfy the relationship N2 > N1 ≥ N3.
  10. In Article 7 or Article 8, A reflective mask blank characterized in that the first, second, and third layers satisfy the relationship N2 > N3 > N1.
  11. In Article 7 or Article 8, A reflective mask blank characterized in that the metal is at least one selected from ruthenium (Ru), rhodium (Rh), and iridium (Ir).
  12. In Article 7 or Article 8, The above protective film is a reflective mask blank characterized by further comprising at least one additive element selected from thallium (Tl), hafnium (Hf), titanium (Ti), zirconium (Zr), manganese (Mn), indium (In), gallium (Ga), bismuth (Bi), tantalum (Ta), lead (Pb), silver (Ag), aluminum (Al), vanadium (V), niobium (Nb), tin (Sn), zinc (Zn), chromium (Cr), iron (Fe), antimony (Sb), tungsten (W), molybdenum (Mo), and copper (Cu).
  13. A reflective mask having a substrate, a multilayer reflective film on the substrate, a protective film on the multilayer reflective film, and an absorber pattern on the protective film, The above protective film has, on the above multilayer reflective film, a silicon-containing layer, a first layer, a second layer, and a third layer in this order, The above protective film comprises metal and nitrogen, and A reflective mask characterized in that, when the nitrogen content of the first layer is N1, the nitrogen content of the second layer is N2, and the nitrogen content of the third layer is N3, N2 is greater than N1 and N3.
  14. In Paragraph 13, When the metal content of the first layer is set to M1, the metal content of the second layer is set to M2, and the metal content of the third layer is set to M3, (M3/(N3+M3)>M1/(N1+M1)>M2/(N2+M2)) A reflective mask characterized by satisfying the relationship.
  15. In paragraph 13 or 14, A reflective mask characterized in that the first, second, and third layers satisfy the relationship N2 > N1 ≥ N3.
  16. In paragraph 13 or 14, A reflective mask characterized in that the first, second, and third layers satisfy the relationship N2 > N3 > N1.
  17. In paragraph 13 or 14, A reflective mask characterized in that the metal is at least one selected from ruthenium (Ru), rhodium (Rh), and iridium (Ir).
  18. In paragraph 13 or 14, A reflective mask characterized in that the protective film further comprises at least one additive element selected from thallium (Tl), hafnium (Hf), titanium (Ti), zirconium (Zr), manganese (Mn), indium (In), gallium (Ga), bismuth (Bi), tantalum (Ta), lead (Pb), silver (Ag), aluminum (Al), vanadium (V), niobium (Nb), tin (Sn), zinc (Zn), chromium (Cr), iron (Fe), antimony (Sb), tungsten (W), molybdenum (Mo), and copper (Cu).
  19. A method for manufacturing a semiconductor device characterized by having a process of performing a lithography process using an exposure device using a reflective mask described in claim 13 or 14, and forming a transfer pattern on a transfer target.

Description

Multilayer reflective film attached substrate, reflective mask blank and reflective mask, and method for manufacturing a semiconductor device The present invention relates to a reflective mask used in the manufacture of semiconductor devices, etc., and to a substrate with a multilayer reflective film attached and a reflective mask blank used to manufacture the reflective mask. Furthermore, the present invention relates to a method for manufacturing a semiconductor device using the reflective mask. In response to the increasing demand for higher density and precision of ultra-LSI devices in recent years, EUV lithography, an exposure technology using extreme ultraviolet (hereinafter referred to as EUV) light, has been proposed. A reflective mask comprises a multilayer reflective film formed on a substrate for reflecting exposure light, and an absorber pattern formed on the multilayer reflective film, which is a patterned absorber film for absorbing exposure light. The light image reflected by the multilayer reflective film is transferred onto a semiconductor substrate (transfer target), such as a silicon wafer, through a reflective optical system. As a substrate with a reflective layer attached for manufacturing a reflective mask used in EUV lithography, there is, for example, the EUV lithography substrate with a reflective layer attached described in Patent Documents 1 and 2. Patent Documents 1 and 2 describe a substrate with a reflective layer attached for EUV lithography in which a reflective layer that reflects EUV light and a protective layer that protects the reflective layer are formed in this order on the substrate. Patent Document 1 describes a substrate with a reflective layer attached for EUV lithography, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer is formed between the reflective layer and the protective layer. Furthermore, Patent Document 1 describes the following: that is, the intermediate layer consists of a first layer and a second layer. The first layer contains 0.5 to 25 at% nitrogen and 75 to 99.5 at% Si. The second layer contains 60 to 99.8 at% Ru, 0.1 to 10 at% nitrogen, and 0.1 to 30 at% Si. The total film thickness of the first layer and the second layer is 0.2 to 2.5 nm. The first layer constituting the intermediate layer is formed on the reflective layer side, and the second layer is formed on the first layer. The protective layer does not substantially contain Si. Patent document 2 describes a substrate with a reflective layer attached for EUV lithography, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing 0.5 to 25 at% nitrogen and 75 to 99.5 at% Si is formed between the reflective layer and the protective layer. FIG. 1 is a schematic cross-sectional view showing an example of a substrate with a multilayer reflective film attached according to the present embodiment. FIG. 2 is a schematic cross-sectional view showing an example of a reflective mask blank of the present embodiment. FIG. 3 is a schematic cross-sectional view showing another example of a reflective mask blank of the present embodiment. FIG. 4 is a schematic cross-sectional view showing an example of a method for manufacturing a reflective mask according to the present embodiment. Figure 5 is a schematic diagram showing an example of an EUV exposure device. Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Furthermore, the following embodiments are forms intended to specifically explain the present invention and are not intended to limit the scope of the present invention. FIG. 1 is a schematic cross-sectional view showing an example of a multilayer reflective film attached substrate (90) of the present embodiment. The multilayer reflective film attached substrate (90) shown in FIG. 1 is provided with a multilayer reflective film (2) and a protective film (3) on a substrate (1). The protective film (3) has a silicon-containing layer (32), a first layer (34), a second layer (36), and a third layer (38) in that order on the multilayer reflective film (2). In addition, the multilayer reflective film attached substrate (90) may further have other thin films, such as a back-side conductive film (5). FIG. 2 is a schematic cross-sectional view showing an example of a reflective mask blank (100) of the present embodiment. The reflective mask blank (100) shown in FIG. 2 has a multilayer reflective film (2), a protective film (3), and an absorbent film (4) on a substrate (1). The reflective mask blank (100) may have a back conductive film (5). In addition, the substrate (90) with the multilayer reflective film attached may further have other thin films, such as a resist film (11). FIG. 3 is a schematic cross-sectional view showing another example of a r