KR-102961123-B1 - DISPLAY DEVICE

Abstract

A display device is provided. The display device comprises a substrate, a transparent electrode disposed on one surface of the substrate, a reflective electrode disposed on the transparent electrode, a transistor disposed on the reflective electrode, and a light-emitting element disposed between the transparent electrode and the reflective electrode, wherein the transistor overlaps with the light-emitting element.

Inventors

• 전형일
• 김민우
• 박성국
• 송대호
• 양병춘
• 최진우

Assignees

• 삼성디스플레이 주식회사

Dates

Publication Date

20260507

Application Date

20201118

Claims (20)

1. Substrate; A transparent electrode disposed on one surface of the above substrate; A reflective electrode disposed on the transparent electrode above; A transistor disposed on the above-mentioned reflective electrode; and A light-emitting element disposed between the transparent electrode and the reflective electrode, comprising The above transistor overlaps with the above light-emitting element, and The above transistor is a display device comprising a transistor electrode in contact with the reflection electrode and a semiconductor layer between the reflection electrode and the transistor electrode.
2. In Article 1, The above light-emitting element is, First semiconductor layer; A second semiconductor layer disposed on the first semiconductor layer; and A display device further comprising a contact electrode disposed between the transparent electrode and the first semiconductor layer.
3. In Article 2, The above contact electrode is a display device that contacts the above transparent electrode.
4. In Article 2, The above contact electrode is a display device comprising the same material as the above transparent electrode.
5. In Article 2, The above contact electrode is a display device comprising at least one of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), and ZTO (zinc tin oxide).
6. In Article 2, A display device in which the first semiconductor layer is electrically connected to the transparent electrode and the second semiconductor layer is electrically connected to the reflective electrode.
7. In Article 1, The above transparent electrode is a display device comprising at least one of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), and ZTO (zinc tin oxide).
8. In Article 1, A display device in which the width of the reflection electrode is greater than the width of the light-emitting element.
9. In Article 8, The above-mentioned reflective electrode is a display device that covers the above-mentioned light-emitting element.
10. In Article 1, A display device further comprising a planarization layer surrounding the light-emitting element.
11. In Article 10, The above planarization layer is a display device disposed between the transparent electrode and the reflective electrode.
12. In Article 11, The above-mentioned reflective electrode is a display device that is directly disposed on the planarization layer.
13. In Article 1, The above transistor is a display device further comprising a gate electrode between the semiconductor layer and the transistor electrode.
14. delete
15. In Article 1, The above substrate includes a display area where the light-emitting element is placed, and a non-display area excluding the display area. A display device further comprising a pad portion disposed in the above-mentioned display area.
16. In Article 15, The above pad portion is a display device that overlaps with the above reflective electrode.
17. In Article 1, A display device further comprising a low-resistance conductive layer disposed on the above-mentioned transparent electrode.
18. In Article 17, The above low-resistance conductive layer is a display device having a mesh shape.
19. In Article 1, A color conversion layer disposed on the other side of the substrate and overlapping with the light-emitting element; and A display device further comprising a color filter layer disposed on the color conversion layer.
20. In Article 19, A display device further comprising a light-blocking pattern surrounding the color conversion layer or the color filter layer.

Description

Display Device {DISPLAY DEVICE} The present invention relates to a display device. With the recent rise in interest in information displays, research and development on display devices is continuously being carried out. FIGS. 1 and FIGS. 2 are a perspective view and a cross-sectional view showing a light-emitting element according to one embodiment. FIG. 3 is a plan view showing a display device according to one embodiment. FIG. 4 is a cross-sectional view showing a display device according to one embodiment. FIG. 5 is a cross-sectional view showing a pixel according to one embodiment. FIG. 6 is a cross-sectional view showing a display device according to another embodiment. FIG. 7 is a cross-sectional view showing a display device according to another embodiment. FIGS. 8 to 13 are cross-sectional views of the process steps of a method for manufacturing a display device according to one embodiment. The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various different forms. These embodiments are provided to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. The terms used herein are for describing the embodiments and are not intended to limit the invention. In this specification, the singular form includes the plural form unless specifically stated otherwise. As used herein, "comprises" and/or "comprising" do not exclude the presence or addition of one or more other components, steps, actions, and/or elements to the mentioned components, steps, actions, and/or elements. Where it is stated that one component is "connected," "combined," or "joined" to another component, it should be understood that the component may be directly connected or joined to the other component, but that another component may be "interposed" between the components, or that each component may be "connected," "combined," or "joined" through another component. When elements or layers are referred to as being on another element or layer, this includes cases where another layer or element is interposed directly on or in the middle of another element. Throughout the specification, the same reference numerals refer to the same components. Although terms such as "first," "second," etc., are used to describe various components, it goes without saying that these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, it goes without saying that the first component mentioned below may also be the second component within the technical scope of the present invention. Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. FIGS. 1 and FIGS. 2 are a perspective view and a cross-sectional view showing a light-emitting element according to one embodiment. Referring to FIGS. 1 and 2, the light-emitting element (LD) may include a first semiconductor layer (11), an active layer (12), a second semiconductor layer (13), a contact electrode (14), and/or an insulating film (INF). As an example, the light-emitting element (LD) may be composed of a laminate in which the first semiconductor layer (11), the active layer (12), and the second semiconductor layer (13) are sequentially stacked along one direction. The light-emitting element (LD) may be provided in a columnar shape extending along one direction. The light-emitting element (LD) may have one end and the other end along one direction. One of the first and second semiconductor layers (11, 13) may be disposed at one end of the light-emitting element (LD), and the other of the first and second semiconductor layers (11, 13) may be disposed at the other end of the light-emitting element (LD). The light-emitting element (LD) may be a light-emitting element manufactured into a pillar shape through an etching method or the like. In this specification, the term "pillar shape" encompasses rod-like shapes or bar-like shapes with an aspect ratio greater than 1, such as cylindrical pillars or polygonal pillars, and the shape of the cross-section is not particularly limited. The light-emitting element (LD) can have a size small enough to be on a nanometer scale to a micrometer scale. For example, the light-emitting element (LD) can each have a diameter (D) (or width) and/or length (L) in the range of nanometer scale to micrometer scale. However, the size of the light-emitting element (LD) is not limited to this, and the size of the light-emitting element (LD) can be varied depending on the design conditions of various devices that utilize the light-emitting device using the l