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KR-102961195-B1 - NOVEL COMPOSITION, PRECURSOR COMPOSITION INCLUDING THE SAME, AND PREPARING METHOD OF THIN FILM USING THE SAME

KR102961195B1KR 102961195 B1KR102961195 B1KR 102961195B1KR-102961195-B1

Abstract

The present invention relates to a precursor composition for vapor deposition capable of thin film deposition through vapor deposition, and more specifically, to a novel composition applicable to Atomic Layer Deposition (ALD) or Chemical Vapor Deposition (CVD) and having excellent reactivity, volatility, and thermal stability, a precursor composition comprising said novel composition, and a method for manufacturing a thin film using said precursor composition.

Inventors

  • 염규현
  • 문기영
  • 유대원
  • 석장현

Assignees

  • 주식회사 한솔케미칼

Dates

Publication Date
20260507
Application Date
20231219

Claims (11)

  1. A first compound represented by the following chemical formula 1 and a second compound represented by the following chemical formula 2, comprising Composition: [Chemical Formula 1] In the above chemical formula 1, R1 and R2 are each independently hydrogen, a linear or branched hydrocarbon group having 1 to 4 carbon atoms, OR 9 , or NR 10 R 11 , and R3 and R8 are, independently, hydrogen or linear or branched hydrocarbon groups having 1 to 6 carbon atoms, and R4 and R5 are, each independently, hydrogen, or a linear or branched hydrocarbon group having 1 to 3 carbon atoms, and R6 and R7 are methyl groups, and R 9 to R 11 are each independently hydrogen, or a linear or branched hydrocarbon group having 1 to 3 carbon atoms. [Chemical Formula 2] In the above chemical formula 2, R 12 and R 13 are, each independently, hydrogen, or a linear or branched hydrocarbon group having 1 to 4 carbon atoms, OR 20 , or NR 21 R 22 , and R 14 and R 19 are, independently, hydrogen or linear or branched hydrocarbon groups having 1 to 6 carbon atoms, and R 15 and R 16 are, each independently, hydrogen or a linear or branched hydrocarbon group having 1 to 3 carbon atoms, and R 17 and R 18 are methyl groups, and R 20 to R 22 are each independently hydrogen, or a linear or branched hydrocarbon group having 1 to 3 carbon atoms.
  2. In paragraph 1, R1 , R2 , R12 , and R13 are each independently selected from the group consisting of hydrogen, methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, sec-butyl group, tert-butyl group, OH group, OMe group, OEt group, O n Pr group, O i Pr group, NH2 group, NHMe group, NHEt group, NH n Pr group, NH i Pr group, NMe2 group , NMeEt group, NMe n Pr group, NMe i Pr group, NEt2 group, NEt n Pr group, NEt i Pr group, N n Pr2 group, N n Pr i Pr group, and Ni Pr2 group, Composition. (Me is methyl, Et is ethyl, n Pr is n-propyl, and i Pr is iso-propyl.)
  3. In paragraph 1, R3 , R8 , R14 , and R19 are each independently selected from the group consisting of hydrogen, methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, sec-butyl group, tert-butyl group, n-pentyl group, iso-pentyl group, neo-pentyl group, sec-pentyl group, tert-pentyl group, hexyl group, iso-hexyl group, and isomers thereof, Composition.
  4. In paragraph 1, R4 , R5 , R15 , and R16 are each independently selected from the group consisting of hydrogen, methyl group, ethyl group, n-propyl group, and iso-propyl group, Composition.
  5. In paragraph 1, R 9 to R 11 and R 20 to R 22 are each independently selected from the group consisting of hydrogen, methyl group, ethyl group, n-propyl group, and iso-propyl group, Composition.
  6. In paragraph 1, The molar ratio of the first compound to the second compound is 1:1 to 5:1, Composition.
  7. A composition comprising any one of claims 1 to 6, Precursor composition for vapor deposition.
  8. A step comprising introducing a precursor composition for vapor deposition according to claim 7 into a chamber, Method for manufacturing a thin film.
  9. In paragraph 8, The method for manufacturing the above thin film comprises atomic layer deposition (ALD) or chemical vapor deposition (CVD).
  10. In paragraph 8, The method further includes the step of injecting a compound containing oxygen (O) atoms as a reaction gas, and The above reaction gas is one or more selected from water vapor ( H₂O ), hydrogen peroxide vapor ( H₂O₂ ), oxygen ( O₂ ), a mixture of oxygen and hydrogen ( O₂ + H₂ ) , and ozone ( O₃ ). Method for manufacturing a thin film.
  11. delete

Description

Novel composition, precursor composition including the same, and method of preparing a thin film using the same The present invention relates to a novel composition capable of thin film deposition through vapor deposition, a precursor composition comprising the novel composition, and a method for manufacturing a thin film using the precursor composition. As semiconductor devices become more highly integrated and miniaturized, it is becoming increasingly important to form metal and metal oxide thin films of uniform thickness for application in various technologies such as microelectronics, magnetic information storage, and catalysts. Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD) is used to fabricate metal and metal oxide thin films. In particular, ALD enables the formation of desired thin films by sequentially injecting and removing reactive materials into a chamber, allows for easy compositional control, and can form films of uniform thickness. Furthermore, ALD offers excellent step coverage, which is advantageous for growing thin films uniformly on complex and sophisticated devices. Precursors play a crucial role in the fabrication of thin films using atomic layer deposition, requiring high volatility, high thermal stability, and high reactivity within the chamber. To date, precursor development has been ongoing using various ligands, and known representative ligands include halogens, alkoxides, cyclopentadienes, beta-diketonates, amides, and amidinates. However, most known precursors are solid compounds, have low volatility or stability, or can cause problems such as impurity contamination during thin film deposition; therefore, there is a need for the development of novel precursors with superior properties that overcome these drawbacks. In particular, silicon dioxide ( SiO₂ ) has been used as the gate dielectric material for transistors until now, but as the size of semiconductor devices has recently become increasingly smaller, problems such as tunneling current leakage, increased power dissipation, and heat generation have become serious. Therefore, there is a need to develop new materials with high dielectric constant to replace SiO₂ dielectrics, and research on oxide semiconductors is actively underway as a promising candidate. Indium gallium oxide (IGO) is a ternary n-type oxide semiconductor that exhibits good channel mobility and excellent light transmittance, making it highly useful for transparent thin film transistors (TFTs). Furthermore, indium gallium oxide displays a resistance change of a second order of magnitude between its amorphous structure, which exhibits high resistance, and its cubic structure, which exhibits low resistance. Due to these characteristics, it is considered a suitable material for Phase Change Memory (PCM) devices that can be operated at low power. FIG. 1(a) is a graph showing the change in deposition rate according to the change in precursor injection time in the preparation of the indium gallium oxide film of Preparation Example 1 of the present invention, FIG. 1(b) is a graph showing the change in deposition rate according to the change in reaction gas injection time in the preparation of the indium gallium oxide film of Preparation Example 2 of the present invention, and FIG. 1(c) is a graph showing the change in deposition rate according to the change in process temperature in the preparation of the indium gallium oxide film of Preparation Example 3 of the present invention. Figure 2 is a graph showing the NMR measurement results of a composition in which the ratio of DMION to DMGON of the present embodiment is 3:1. Figure 3 is a graph showing the results of thermogravimetric analysis (TGA) of a composition in which the ratio of DMION to DMGON of the present embodiment is 3:1. Figure 4 is a graph and table showing the results of measuring the XPS depth profile of an indium gallium oxide film with a thickness of 20 nm deposited at a process temperature of 310 ℃. Figure 5 is a graph and table showing the results of X-ray diffractometry (XRD) analysis of an indium gallium oxide film deposited using a composition in which the ratio of DMION to DMGON of the present embodiment is 3:1 at process temperatures of 100 ℃ and 310 ℃. Figure 6 is a graph and table showing the results of X-ray reflectometry (XRR) analysis of an indium gallium oxide film deposited using a composition with a DMION to DMGON ratio of 3:1 according to the present embodiment at process temperatures of 100 ℃ and 310 ℃. Figure 7(a) is a transmission electron microscope (TEM) image of an indium gallium oxide film prepared in a trench structure with an aspect ratio of 40:1 and deposited at a process temperature of 310 ℃, and Figure 7(b) is a photograph showing the mapping results of the indium gallium oxide film through energy dispersive X-ray spectrometry (EDS). The operation and effects of the invention will be described in more detail below through specific embodiments. However, the