KR-102961409-B1 - SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE ARRAY

KR102961409B1KR 102961409 B1KR102961409 B1KR 102961409B1KR-102961409-B1

Abstract

A semiconductor light-emitting device according to an embodiment of the present invention may comprise: a package body including a recess surrounded by side walls; a light-emitting diode (LED) chip disposed on a mounting surface within the recess; a lead frame installed on the package body and electrically connected to the light-emitting diode chip; a wavelength conversion layer disposed within the recess, surrounding the light-emitting diode chip, and surrounded by the side of the package body in a direction parallel to the mounting surface, and comprising a wavelength conversion material; and a transparent resin layer disposed on the wavelength conversion layer to seal the wavelength conversion layer, having sides that are open from each of the two sides of the package body located in one direction parallel to the mounting surface, and disposed on the side of the package body in the other direction parallel to the mounting surface, and comprising silicone. Accordingly, by using a semiconductor light-emitting device according to an embodiment of the present invention, a KSF phosphor can be protected from moisture outside the device, and furthermore, the image quality and brightness of an electronic device including the semiconductor light-emitting device can be improved.

Inventors

하명선
박현주
김선우
김영경

Assignees

삼성전자주식회사

Dates

Publication Date: 20260511
Application Date: 20210623

Claims (10)

Package body including a concave portion surrounded by side walls; A light-emitting diode (LED) chip disposed on the mounting surface within the above-mentioned concave portion; A lead frame installed on the above package body and electrically connected to the light-emitting diode chip; A wavelength conversion layer disposed within the above-mentioned concave portion, surrounding the light-emitting diode chip, and surrounded by the side of the package body in the direction in which it is placed within the mounting surface, and comprising a wavelength conversion material; and A semiconductor light-emitting device comprising: a transparent resin layer disposed on the wavelength conversion layer to seal the wavelength conversion layer, having sides that are open from each of the two sides of the package body located in one direction within the mounting surface, and disposed on the side of the package body in the other direction within the mounting surface.
In paragraph 1, A semiconductor light-emitting device in which the wavelength conversion layer is formed by precipitating a portion of the resin applied to the upper surface of the light-emitting diode chip, and the transparent resin layer is formed from the remaining portion of the resin.
In paragraph 1, The open side of the transparent resin layer forms a co-plane with the side of the package body and the side of the lead frame, and the lead frame is directly exposed in the co-plane of the semiconductor light-emitting device.
In paragraph 1, A semiconductor light-emitting device in which the sidewall of the concave portion in one direction in which the open sides of the transparent resin layer are located has an angle between 120° and 170° with the upper surface of the light-emitting diode chip.
A package body including a concave portion surrounded by side walls, wherein the concave portion is distinguished by a partition and includes a first concave portion and a second concave portion arranged parallel to each other in the long axis direction; A first light-emitting diode (LED) chip disposed on the mounting surface within the first concave portion; A second light-emitting diode chip disposed on the mounting surface within the second concave portion; A lead frame installed on the above package body and electrically connected to the first light-emitting diode chip and the second light-emitting diode chip; A wavelength conversion layer disposed within the first concave portion and surrounding the first light-emitting diode chip and comprising a wavelength conversion material; and A transparent resin layer disposed within the second concave portion and surrounding the second light-emitting diode chip; comprising A semiconductor light-emitting device having a first upper layer having one side open in the direction of the long axis of the package body disposed on the wavelength conversion layer, and a second upper layer having another side open in the direction of the long axis disposed on the transparent resin layer, wherein the first upper layer and the second upper layer are disposed on the side of the package body in the direction of the short axis of the package body.
In paragraph 5, A semiconductor light-emitting device wherein the first upper layer and the second upper layer are physically separated by the partition, the first upper layer comprises a wavelength conversion material constituting the wavelength conversion layer, and the second upper layer comprises silicon constituting the transparent resin layer.
In paragraph 6, A semiconductor light-emitting device in which the height of the wavelength conversion layer and the transparent resin layer is smaller than the height of the partition wall.
In paragraph 5, A semiconductor light-emitting device comprising a first upper layer and a second upper layer connected on the partition wall, wherein the connected resin layer comprises silicon constituting the transparent resin layer.
An array body comprising a package body including a plurality of recesses each enclosed by side walls and arranged in parallel in one direction, and a light-emitting diode (LED) chip disposed on each mounting surface within the plurality of recesses, and a lead frame electrically connected to the light-emitting diode chip; A wavelength conversion layer comprising a wavelength conversion material, each disposed within the plurality of concave portions, surrounding the light-emitting diode chip, and formed by the deposition of a portion of the resin applied to the upper surface of the light-emitting diode chip; and A semiconductor light-emitting device array comprising: a transparent resin layer formed from the remainder of the resin, disposed on the wavelength conversion layer to seal the wavelength conversion layer, and extending in one direction in which the plurality of concave portions are arranged.
In Paragraph 9, A semiconductor light-emitting device array in which the wavelength conversion layer is surrounded by the side of the package body at each of the plurality of concave portions, and the transparent resin layer is surrounded by the side of the package body on the wavelength conversion layer.

Description

Semiconductor Light Emitting Device and Semiconductor Light Emitting Device Array The present invention relates to a semiconductor light-emitting element and a semiconductor light-emitting element array. A Light Emitting Diode (LED) refers to a semiconductor device capable of producing light of various colors using a PN junction of a compound semiconductor. LEDs have the advantages of a long lifespan, the ability to be miniaturized and lightweight, and low-voltage driving due to their strong light directionality. Additionally, LEDs are resistant to shock and vibration, require no warm-up time or complex driving, and can be packaged in various forms, allowing for application in a wide range of uses. Semiconductor light-emitting devices can undergo a primary packaging process in which phosphors and lenses are mounted on a frame, and a secondary packaging process in which multiple semiconductor light-emitting devices are mounted on a circuit board along with other devices. Meanwhile, among the phosphors used in semiconductor light-emitting devices, KSF phosphors are cheaper than other phosphors, but they have the problem of reduced reliability due to their sensitivity to moisture. FIG. 1 is a simplified perspective view of a semiconductor light-emitting element according to one embodiment of the present invention. FIGS. 2 and FIGS. 3 are cross-sectional views briefly illustrating a semiconductor light-emitting element according to one embodiment of the present invention. FIGS. 4 and FIGS. 5 are drawings for explaining the effects of a semiconductor light-emitting device according to one embodiment of the present invention. FIGS. 6a to 6c are drawings for explaining a method for manufacturing a semiconductor light-emitting device according to an embodiment of the present invention. FIGS. 7a to 7c are drawings for explaining a method for manufacturing a semiconductor light-emitting device according to an embodiment of the present invention. FIGS. 8 and 9 are cross-sectional views briefly illustrating a semiconductor light-emitting element according to one embodiment of the present invention. FIG. 10 is a simplified cross-sectional view of a semiconductor light-emitting element according to one embodiment of the present invention. FIGS. 11 and FIGS. 12 are a top view and a cross-sectional view, respectively, briefly illustrating a semiconductor light-emitting element according to one embodiment of the present invention. FIGS. 13 and FIGS. 14 are a top view and a cross-sectional view, respectively, simply illustrating a semiconductor light-emitting element according to one embodiment of the present invention. FIG. 15 is a simplified cross-sectional view of a semiconductor light-emitting element according to one embodiment of the present invention. FIG. 16 is a simplified perspective view of a semiconductor light-emitting element array according to one embodiment of the present invention. FIGS. 17 and FIGS. 18 are a top view and a cross-sectional view, respectively, briefly illustrating a semiconductor light-emitting element array according to one embodiment of the present invention. FIG. 19 is a simplified cross-sectional view of a semiconductor light-emitting device array according to one embodiment of the present invention. FIG. 20 is a simplified perspective view of a semiconductor light-emitting element array according to one embodiment of the present invention. Hereinafter, preferred embodiments of the present invention are described as follows with reference to the attached drawings. FIG. 1 is a simplified perspective view of a semiconductor light-emitting element according to one embodiment of the present invention. FIG. 2 and FIG. 3 are simplified cross-sectional views of a semiconductor light-emitting element according to one embodiment of the present invention. FIG. 2 may be a cross-sectional view in the long axis direction of a semiconductor light-emitting element (10) cut along the line I-I' of FIG. 1, and FIG. 3 may be a cross-sectional view in the short axis direction of a semiconductor light-emitting element (10) cut along the line II-II' of FIG. 1. A semiconductor light-emitting element (10) may include an upper surface in a first direction (e.g., Z direction). In the semiconductor light-emitting element (10) illustrated in FIGS. 1 to 3, the major axis direction may be a second direction (e.g., X direction), and the minor axis direction may be a third direction (e.g., Y direction). For example, the length of the semiconductor light-emitting element (10) in the second direction, which is the major axis direction, may be L1, and the length of the semiconductor light-emitting element (10) in the third direction, which is the minor axis direction, may be L2, which is smaller than L1. Additionally, the direction placed within the mounting surface refers to the direction of a straight line placed within the mounting surface and may include a second direction (X direction) and a third direction (Y directi