KR-102961425-B1 - component for semiconductor manufacturing equipment

Abstract

A wafer placement plate (10) comprises a ceramic plate (20) in which an electrostatic electrode (22) is embedded, a power supply member insertion hole (24) provided to reach the front of the electrostatic electrode (22) from the lower surface of the ceramic plate (20), a metal power supply member (50) inserted with a margin into the power supply member insertion hole (24), a concave hole (25) provided to reach the electrostatic electrode (22) (electrode extraction part (22a)) from the bottom surface of the power supply member insertion hole (24), a first solder layer (26) filled in the concave hole (25), and a second solder layer (27) that joins the entire front end surface (50a) of the power supply member (50) with the first solder layer (26). The diameter (D1) of the opening of the concave hole (25) is smaller than the diameter (D2) of the power supply member insertion hole (24) and is equal to or larger than the diameter (D3) of the power supply member (50). The second solder layer (27) is provided so as not to reach the boundary (24a) between the bottom surface and the side of the power supply member insertion hole (24).

Inventors

• 구노 다츠야
• 이노우에 세이야

Assignees

• 엔지케이 가부시키가이샤

Dates

Publication Date

20260507

Application Date

20230706

Claims (6)

1. In a component for a semiconductor manufacturing apparatus, A ceramic plate having a wafer placement surface on its upper surface and an electrode embedded therein, and A power supply member insertion hole provided to reach the front of the electrode from the lower surface of the ceramic plate, and A power supply member inserted with clearance into the above-mentioned power supply member insertion hole, and A concave hole is provided to reach the electrode or the electrode extraction part attached to the electrode from the bottom surface of the power supply member insertion hole, wherein the diameter of the opening is smaller than the diameter of the power supply member insertion hole and is equal to or larger than the diameter of the power supply member, and A first solder layer filled in the above-mentioned concave hole, and A second solder layer formed to bond the entire end surface of the power supply member and the first solder layer, and arranged so as not to reach the boundary between the bottom surface and the side of the power supply member insertion hole. Includes, The first lead layer above contains an active metal, and The second lead layer above does not contain an active metal or has a lower content of an active metal than the first lead layer, and A semiconductor manufacturing device member, wherein the material of the bottom surface and side surface of the above-mentioned power supply member insertion hole is the same as the material of the above-mentioned ceramic plate.
2. In paragraph 1, the boundary portion is chamfered, and The above second solder layer is a member for a semiconductor manufacturing device, provided such that it does not reach the chamfered boundary portion.
3. A member for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein the edge of the end face of the power supply member is chamfered to C 0.3 or less or R 0.3 or less.
4. A member for a semiconductor manufacturing apparatus according to claim 1, wherein the interface between the first solder layer and the second solder layer is a region in which the component included in the first solder layer and the component included in the second solder layer are diffused.
5. In paragraph 1 or 2, A conductive cooling plate provided on the lower surface of the ceramic plate, and Penetrating the cooling plate in the vertical direction and communicating with the power supply member insertion hole, and the cooling plate penetration hole through which the power supply member is inserted and penetrates A component for a semiconductor manufacturing device comprising
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Description

component for semiconductor manufacturing equipment The present invention relates to a component for a semiconductor manufacturing apparatus. In semiconductor manufacturing devices, components for semiconductor manufacturing devices, such as ceramic heaters for heating wafers or electrostatic chucks for adsorbing and holding wafers, are employed. Patent Document 1 discloses a structure for bonding a power supply member to an electrode embedded in a ceramic plate in a component for this type of semiconductor manufacturing device. Specifically, a power supply member insertion hole is provided to reach the front of the electrode from the lower surface of the ceramic plate, and a concave receiving portion is provided to reach the electrode extraction portion attached to the electrode from the bottom surface of the power supply member insertion hole. A first metal disc is received in the receiving portion. The first metal disc is bonded to the electrode extraction portion by a first solder layer. The power supply member is inserted into the power supply member insertion hole with a clearance. A second solder layer containing a second metal disc is provided between the front end surface of the power supply member and the first metal disc. The second solder layer is provided to cover the entire bottom surface of the power supply member insertion hole (i.e., to reach the boundary between the bottom surface and the side of the power supply member insertion hole). Additionally, the second solder layer is provided to come into contact with the entire front end surface of the power supply member and to run up the side of the power supply member (Fig. 3 of Patent Document 1). Alternatively, the second solder layer is provided to come into contact with the central part of the front end surface of the power supply member but not with the outer periphery (Figs. 4 and 5 of Patent Document 1). FIG. 1 is a cross-sectional view showing the schematic configuration of a wafer placement table (10). Figure 2 is a partial enlarged view of Figure 1. FIG. 3 is an explanatory diagram of the process of joining a power supply member (50) to an electrostatic electrode (22). FIG. 1 is a cross-sectional view showing the schematic configuration of the wafer placement table (10) of the present embodiment (a cross-sectional view when the wafer placement table (10) is cut from a plane including the central axis of the wafer placement table (10)), and FIG. 2 is a partial enlarged view of FIG. 1 (an enlarged view within the border indicated by a two-dot dashed line). In addition, in the following description, up and down, left and right, and front and back may be used, but up and down, left and right, and front and back are merely relative positional relationships. A wafer placement table (10) is an example of a component for a semiconductor manufacturing device used to process a wafer (W). As shown in FIG. 1, the wafer placement table (10) comprises a ceramic plate (20), a cooling plate (30), a bonding layer (40), and a power supply member (50). The ceramic plate (20) is a disc-shaped member having a wafer placement surface (20a) on its upper surface. The ceramic plate (20) is formed from a ceramic-containing material. The ceramic-containing material is a material in which ceramic is the main component, and may also contain components derived from the sintering aid (e.g., rare earth elements, etc.) or unavoidable components in addition to ceramic. The main component refers to a material that accounts for 50 mass% or more of the total. Examples of ceramics include alumina or aluminum nitride. An electrostatic electrode (22) is embedded in the ceramic plate (20). The electrostatic electrode (22) is formed from a material containing a metal, such as W, Mo, WC, or MoC. For the metal used in the electrostatic electrode (22), it is preferable that the coefficient of thermal expansion be close to the coefficient of thermal expansion of the ceramic plate (20). In order to make the coefficient of thermal expansion of the electrostatic electrode (22) close to the coefficient of thermal expansion of the ceramic plate (20), the ceramic contained in the ceramic plate (20) may be included in the electrostatic electrode (22). The electrostatic electrode (22) is a single-pole electrostatic electrode in the form of a disc or a mesh. The layer of the ceramic plate (20) above the electrostatic electrode (22) functions as a dielectric layer. A DC power source (62) for electrostatic adsorption is connected to the electrostatic electrode (22) through a power supply member (50). The cooling plate (30) is a disc-shaped member having a refrigerant flow path (32) through which a refrigerant can circulate inside. The refrigerant flow path (32) is formed in a single stroke from one end to the other so as to extend evenly across the entire surface of the ceramic plate (20) when viewed in a planar view. The one end and the other end of the refrigerant flow path (32) are con