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KR-102961432-B1 - A high gain and high frequency amplifier using a coupled line based dual-peak Gmax-core and A computing apparatus for reactance value of the coupled line

KR102961432B1KR 102961432 B1KR102961432 B1KR 102961432B1KR-102961432-B1

Abstract

A high-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line according to the present invention comprises: a first passive component connected to an input terminal, a first transistor connected to the output end of the first passive component, and a second passive component connected to the output end of the first transistor and an output terminal; and a first amplifier including a third passive component connected between the input terminal and the output terminal and connected in parallel with the first passive component, the first transistor, and the second passive component. The amplifier includes a second amplifier comprising a fourth passive component connected to an input terminal, a second transistor connected to the rear end of the fourth passive component, a fifth passive component connected to the rear end of the second transistor and an output terminal, and a sixth passive component connected between the input terminal and the output terminal and connected in parallel with the fourth passive component, the second transistor, and the fifth passive component, wherein the third passive component and the sixth passive component are spaced apart adjacently to form a coupled line.

Inventors

  • 이상국
  • 이호근

Assignees

  • 한국과학기술원

Dates

Publication Date
20260507
Application Date
20241218
Priority Date
20231218

Claims (20)

  1. A first amplifier comprising: a first passive component connected to an input terminal; a first transistor connected to the output end of the first passive component; and a second passive component connected to the output end of the first transistor and an output terminal; and a third passive component connected between the input terminal and the output terminal and connected in parallel with the first passive component, the first transistor, and the second passive component; and A second amplifier comprising a fourth passive component connected to an input terminal, a second transistor connected to the rear end of the fourth passive component, a fifth passive component connected to the rear end of the second transistor and an output terminal, and a sixth passive component connected between the input terminal and the output terminal and connected in parallel with the fourth passive component, the second transistor, and the fifth passive component. A high-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line, wherein the third passive element and the sixth passive element are spaced apart adjacently to form a coupled line.
  2. In Article 1, The above third passive element and the above sixth passive element are, High-gain and high-frequency amplifier using dual-peak Gmax-core based coupled lines spaced apart in a vertically stacked configuration.
  3. In Article 1, The above third passive element and the above sixth passive element are, High-gain and high-frequency amplifier using dual-peak Gmax-core based coupled lines spaced apart on the same plane.
  4. In Article 1, The first transistor and the second transistor are, A high-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line positioned oppositely to the adjacently spaced third passive element and the sixth passive element.
  5. In Article 1, The reactance of the above-mentioned coupling line is, Calculated through the mathematical formula 1 below, [Mathematical Formula 1] Here, X3 , CTL : reactance value of the coupled line Y 0o : Characteristic admittance of the coupled line in common-mode Y 0e : Characteristic admittance of the coupled line in differential mode θ : Electrical length (degree) of the coupled line High-gain and high-frequency amplifier using dual-peak Gmax-core based coupled line.
  6. In Article 1, The above third passive element and the above sixth passive element are, High-gain and high-frequency amplifier using dual-peak Gmax-core based coupled lines arranged so that all placement positions overlap.
  7. In Article 1, The above third passive element and the above sixth passive element are, High-gain and high-frequency amplifier using dual-peak Gmax-core based coupled lines arranged such that the positions overlap only partially.
  8. In Article 1, The above passive element is High-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line, which is a transmission line or inductor.
  9. In Article 1, The first amplifier and the second amplifier are, High-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line having a differential structure.
  10. In Article 1, The above-mentioned first passive element is A high-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line having a first reactance value capable of obtaining maximum implementable gain at a set first frequency and a second reactance value capable of obtaining maximum implementable gain at a set second frequency.
  11. In Article 1, The above second passive element is, A high-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line having a third reactance value capable of obtaining maximum implementable gain at a set first frequency and a fourth reactance value capable of obtaining maximum implementable gain at a set second frequency.
  12. In Article 1, The above third passive element is, A high-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line, having a fifth reactance value capable of obtaining maximum achievable gain at the first frequency and a sixth reactance value capable of obtaining maximum achievable gain at the second frequency, and having a characteristic impedance value and length capable of obtaining maximum gain at both the first frequency and the second frequency.
  13. In Article 1, The above-mentioned fourth passive element is A high-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line having a seventh reactance value capable of obtaining maximum implementable gain at a set first frequency and an eighth reactance value capable of obtaining maximum implementable gain at a set second frequency.
  14. In Article 1, The above-mentioned fifth passive element is, A high-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line having a ninth reactance value capable of obtaining maximum implementable gain at a set first frequency and a tenth reactance value capable of obtaining maximum implementable gain at a set second frequency.
  15. In Article 1, The above-mentioned sixth passive element is, A high-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line, having a 11th reactance value capable of obtaining maximum achievable gain at the 1st frequency and a 12th reactance value capable of obtaining maximum achievable gain at the 2nd frequency, and having a characteristic impedance value and length capable of obtaining maximum gain at both the 1st frequency and the 2nd frequency.
  16. A first amplifier comprising: a first passive component connected to an input terminal; a first transistor connected to the rear end of the first passive component; and a second passive component connected to the rear end of the first transistor and an output terminal; and a third passive component connected between the input terminal and the output terminal and connected in parallel with the first passive component, the first transistor, and the second passive component; A second amplifier comprising a fourth passive component connected to an input terminal, a second transistor connected to the rear end of the fourth passive component, a fifth passive component connected to the rear end of the second transistor and an output terminal, and a sixth passive component connected between the input terminal and the output terminal and connected in parallel with the fourth passive component, the second transistor, and the fifth passive component, wherein the third passive component and the sixth passive component are spaced apart adjacently to form a coupled line; and A calculation device for calculating the reactance value of a coupled line, comprising a calculation unit capable of calculating the reactance of the coupled line.
  17. In Article 16, The reactance of the above-mentioned coupling line is, Calculated through the mathematical formula 1 below, [Mathematical Formula 1] Here, X3 , CTL : reactance value of the coupled line Y 0o : Characteristic admittance of the coupled line in common-mode Y 0e : Characteristic admittance of the coupled line in differential mode θ : Electrical length (degree) of the coupled line A calculation device for calculating the reactance value of a combined line.
  18. In Article 16, The above third passive element and the above sixth passive element are, A computing device for calculating the reactance value of a combined line, spaced apart and arranged in a stacked form.
  19. In Article 16, The above third passive element and the above sixth passive element are, A computing device for calculating the reactance value of a coupled line, spaced apart on the same plane.
  20. In Article 18, The first amplifier and the second amplifier are, A calculation device having a differential structure that calculates the reactance value of a coupled line.

Description

A high gain and high frequency amplifier using a coupled line based dual-peak Gmax-core and a computing apparatus for calculating the reactance value of the coupled line The present invention relates to a design technology for a dual-peak high-gain amplifier using a coupled line-based embedding network. When implementing a differential amplifier using a conventional dual-peak Gmax core that uses a long transmission line with a length of more than 1/4 wavelength as a parallel element, a disadvantage arises in that the size of the amplifier becomes very large. Since the differential structure is implemented by using two Gmax cores that use a transmission line with a length of more than 1/4 wavelength, the problem of the amplifier becoming very large occurs. FIG. 1 is a block diagram illustrating a high-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line according to one embodiment of the present invention. FIG. 2 is a diagram showing the reactance values of passive components included in an amplifier according to one embodiment of the present invention. FIG. 3 is a diagram illustrating a high-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line according to an embodiment of the present invention. FIG. 4 is a diagram illustrating the compact size of a high-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line according to one embodiment of the present invention. FIG. 5 is a graph illustrating the compact size of a high-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line according to one embodiment of the present invention. FIG. 6 is a graph illustrating the frequency-dependent gain values of a high-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line according to one embodiment of the present invention. FIG. 7 is a block diagram illustrating a calculation device for calculating the reactance value of a high-frequency amplifier and a coupled line according to another embodiment of the present invention. Embodiments of the present invention are described below with reference to the attached drawings so that those skilled in the art can easily implement them. However, the present invention may be embodied in various different forms and is not limited to the embodiments described herein. Furthermore, in order to clearly explain the present invention in the drawings, parts unrelated to the explanation have been omitted, and similar parts throughout the specification are denoted by similar reference numerals. Throughout the specification, when a part is described as "including" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. Furthermore, terms such as "part," "unit," and "module" as used in the specification refer to a unit that processes at least one function or operation, and this may be implemented in hardware, software, or a combination of hardware and software. Figure 1 is a block diagram illustrating a high-gain and high-frequency amplifier using a dual-peak Gmax-core based coupled line. Referring to FIG. 1, a high-gain and high-frequency amplifier (100) using a dual-peak Gmax-core based coupled line includes a first amplifier (110) and a second amplifier (120). For example, the first amplifier and the second amplifier may have a differential structure. The first amplifier (110) may include a first passive element (111), a first transistor (112), a second passive element (113), and a third passive element (114). The first passive element (111) is connected to an input terminal and may have a first reactance value that can obtain a maximum achievable gain at a set first frequency and a second reactance value that can obtain a maximum achievable gain at a second frequency. The first transistor (112) can be connected to the rear end of the first passive component (111). The first transistor (112) may include a first terminal connected to the first passive element (111), a second terminal connected to the second passive element (113), and a third terminal connected to ground. The second passive element (113) is connected to the output terminal and the rear end of the first transistor and may have a third reactance value that can obtain a maximum achievable gain at a set first frequency and a fourth reactance value that can obtain a maximum achievable gain at a second frequency. The third passive element (114) can be connected between the input terminal and the output terminal. The third passive element (114) can be connected in parallel with the first passive element (111), the first transistor (112), and the second passive element (113). The third passive element (114) may have a fifth reactance value that can obtain a maximum achievable gain at a first frequency and a sixth reactance value that can obtain a maximum achievable gain at a second frequency. The first passive