KR-102961488-B1 - Control apparatus for supplying multi room and hot temperature mixture gas into drying zone for wafer

Abstract

The present invention relates to a multi-room temperature and high temperature mixed gas supply control device for a semiconductor substrate drying device, wherein a first gas supply pipe and a second gas supply pipe are formed separately on one side of a wafer cleaning and drying device; nitrogen gas is supplied to the first gas supply pipe and a first heater is installed to control the temperature of the nitrogen gas and supply nitrogen gas to the drying zone of the wafer cleaning and drying device; nitrogen gas is supplied to the second gas supply pipe and a second heater is installed to control the temperature of the nitrogen gas and supply nitrogen gas to an IPA tank in which liquid IPA is stored to form IPA gas or IPA bubble gas and supply it to the drying zone (20); thereby controlling the supply of room temperature or high temperature nitrogen gas from the first gas supply pipe to the drying zone, or supplying a mixed gas in which IPA gas or IPA bubble gas is mixed with the nitrogen gas. This has the effect of controlling defects in the substrate that occur during the drying and cleaning processes by selectively supplying one or a mixed gas of drying gas and IPA gas to the drying zone for manufacturing semiconductor substrates during the semiconductor device manufacturing process, and controlling the temperature to room temperature or high temperature, thereby selectively supplying room temperature and high temperature depending on the surface condition and film condition of the substrate. In addition, by adopting a control device that easily and selectively applies the gas temperature supplied to the drying zone, it has the effect of simplifying equipment operation. In addition, by selectively and easily applying IPA gas in gaseous or bubbly form to the drying zone, it has the effect of rapidly supplying it to the quality shape of the substrate.

Inventors

• 박기환
• 백기정

Assignees

• 주식회사 앤아이윈

Dates

Publication Date

20260507

Application Date

20240813

Claims (5)

1. In a wafer cleaning and drying apparatus, A first gas supply pipe (50) and a second gas supply pipe (60) are formed separately on one side; Nitrogen gas is supplied to the first gas supply pipe (50), and a first heater (51) is installed to control the temperature of the nitrogen gas and supply nitrogen gas to the drying zone (20) of the wafer cleaning and drying device; Nitrogen gas is supplied to the second gas supply pipe (60), and a second heater (61) is installed to control the temperature of the nitrogen gas, and nitrogen gas is supplied to an IPA tank (70) in which liquid IPA is stored to form IPA gas or IPA bubble gas, and is formed to be supplied to the drying zone (20); Control to supply ambient or high temperature nitrogen gas from the first gas supply pipe (50) to the above drying zone (20), or The above nitrogen gas is supplied with a mixed gas in which IPA gas or IPA bubble gas is mixed; When supplying room temperature or high temperature nitrogen gas, the first heater (51) is controlled to be OFF or ON; When supplying IPA gas at room temperature or high temperature or bubbly IPA gas, the second heater (61) is controlled to be OFF or ON; The gas discharged from the IPA tank (70) is connected to the first gas supply pipe (50) to form a mixed gas, and the mixed gas passes through a third heater (52) formed in the first gas supply pipe (50), and the third heater (52) is controlled to be ON or OFF in response to a preset condition; The above wafer cleaning and drying device is A cleaning zone (10) is provided at the bottom where cleaning water is supplied, and a drying zone (20) is formed integrally on the upper part of the cleaning zone (10). A hinge portion (31) is formed on the rear end surface of the drying zone (20), and a dome cover (30) mounted on the hinge portion (31) is erected vertically when the drying zone (20) is opened, and is rotated 90° to form a horizontally formed integrated substrate cleaning and drying device (200) to seal the drying zone (20); As a first embodiment, Room temperature nitrogen gas is supplied exclusively to the drying zone (20); As a second embodiment, A mixed gas consisting of room temperature nitrogen gas and room temperature IPA gas is supplied to the drying zone (20); As a third embodiment, There are cases where a mixed gas consisting of high-temperature nitrogen gas and high-temperature IPA bubble gas is supplied to the drying zone (20), or a mixed gas consisting of room-temperature nitrogen gas and high-temperature IPA bubble gas is supplied to the drying zone (20); As a fourth embodiment, High-temperature nitrogen gas is supplied exclusively to the drying zone (20); The above four types of embodiments relate to the operation of the gas and each heater when applying room temperature and high temperature gases to the drying zone, and are characterized by being configured to increase drying capacity by selectively applying the temperature according to the substrate condition of the cleaning process in the cleaning zone (10), or by selectively applying nitrogen gas alone or a mixed gas of nitrogen gas and IPA gas.
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Description

Control apparatus for supplying multi-room and hot temperature mixture gas into drying zone for semiconductor substrate drying apparatus The present invention provides a multi-room temperature and high temperature mixed gas supply control device for a semiconductor substrate drying apparatus, and more specifically, a multi-room temperature and high temperature mixed gas supply control device that selectively supplies a drying gas and an IPA gas as one or a mixed gas to a drying zone for manufacturing a semiconductor substrate during a semiconductor device manufacturing process, controls the temperature to room temperature or high temperature, and selectively supplies room temperature and high temperature according to the surface condition and film condition of the substrate to control defects in the substrate that occur during the drying process and cleaning process. In general, wafer cleaning and wafer drying processes are essential not only for semiconductor manufacturing but also for the manufacturing of liquid crystal displays (LCDs) and wafer substrates. Typically, the wafer cleaning process uses a cleaning bath, while the wafer drying process uses a dryer. The wafer cleaning process is a process for removing contaminants such as particles, metallic impurities, and native oxides generated during previous processes. It involves filling a cleaning tank with a cleaning solution, placing the wafer into the cleaning solution to remove these contaminants first, and then rinsing it using pure water or the like. After the cleaning process is completed, the wafer is transferred to a dryer to remove any pure water or moisture present on the wafer, and then a drying process is performed. In this way, the wafer cleaning process and the wafer drying process were previously carried out in separate devices. Spin dryers and Kimmon dryers are widely used as dryers for drying wafers. A wafer drying device using a rotary dryer utilizes centrifugal force generated by the rotation of a rotating plate. However, there is a risk that the wafer may be damaged by the physical force generated as the wafer rotates, and there is also a problem of contaminating the wafer due to particles generated from the mechanical parts caused by the rotation of the rotating plate. A wafer drying device using a Kimon dryer is equipped with a steam generator to heat a polar organic solvent, isopropyl alcohol (IPA), to over 200°C to vaporize it, thereby substituting the pure water or moisture present on the wafer surface with isopropyl alcohol vapor (IPA vapor), and drying the wafer using heated nitrogen (hot N2). These conventional technologies are manufactured and supplied by selecting only one temperature from room temperature or high temperature gas in the drying zone, and thus cannot actively control the surface or film condition occurring on the semiconductor substrate, which has the problem of not being able to control defects that occur during the drying process. FIG. 1 is a schematic diagram showing a multi-room temperature and high temperature mixed gas supply control device in the drying zone of a separable substrate cleaning and drying device according to the present invention. FIG. 2 is a schematic diagram showing a multi-room temperature and high temperature mixed gas supply control device in the drying zone of an integrated substrate cleaning and drying device according to the present invention. FIG. 3 is a schematic diagram showing a first embodiment of a multi-room temperature and high temperature mixed gas supply control device in the drying zone of a substrate cleaning and drying device according to the present invention. FIG. 4 is a schematic diagram showing a second embodiment of a multi-room temperature and high temperature mixed gas supply control device in the drying zone of a substrate cleaning and drying device according to the present invention. FIG. 5 is a schematic diagram showing a third embodiment of a multi-room temperature and high temperature mixed gas supply control device in the drying zone of a substrate cleaning and drying device according to the present invention. FIG. 6 is a schematic diagram showing a fourth embodiment of a multi-room temperature and high temperature mixed gas supply control device in the drying zone of a substrate cleaning and drying device according to the present invention. FIG. 7 is a schematic diagram showing the operation sequence of the integrated substrate cleaning and drying device of FIG. 2. Fig. 8 is a schematic diagram showing the principle of the Marangoni Dry. Before describing various embodiments of the present invention in detail, it will be understood that the application is not limited to the details of the configuration and arrangement of components described in the following detailed description or illustrated in the drawings. The present invention may be embodied and practiced in other embodiments and may be carried out in various ways. Furthermore, it will be understoo