KR-102961519-B1 - EXPOSURE METHOD, EXPOSURE APPARATUS, AND METHOD OF MANUFACTURING ARTICLE

KR102961519B1KR 102961519 B1KR102961519 B1KR 102961519B1KR-102961519-B1

Abstract

An exposure method for exposing a pattern of a disc to a first shot area of a substrate and exposing a pattern of a disc to a second shot area that overlaps with a part of the first shot area, comprising a first measurement process for measuring the position of an alignment mark corresponding to the first shot area and an exposure process for performing exposure based on the result measured in the first measurement process, wherein the exposure process performs position alignment of the first shot area based on the position information of the alignment mark measured in the first measurement process and performs position alignment of the second shot area using the position information of the alignment mark used for position alignment of the first shot area.

Inventors

시라오 히로아키
기지마 와타루
요네다 신고
기타가와 준
다카이 유타

Assignees

캐논 가부시끼가이샤

Dates

Publication Date: 20260508
Application Date: 20221216
Priority Date: 20220121

Claims (15)

An exposure method comprising exposing a pattern of a disc to a first shot area of a substrate, exposing a pattern of the disc to a second shot area that overlaps a part of the first shot area, and exposing a pattern of the disc to a third shot area that overlaps a part of the second shot area. A first measurement process for measuring the position of an alignment mark corresponding to the first shot area, and A second measurement process for measuring the position of an alignment mark corresponding to the third shot area, and The method includes an exposure process that performs exposure based on the results measured in the first measurement process above, and The above exposure process is characterized by performing position alignment of the first shot area based on position information of the alignment mark measured in the first measurement process, and performing position alignment of the second shot area based on position information of the alignment mark measured in the second measurement process, and performing position alignment of the second shot area using position information of the alignment mark used for position alignment of the first shot area and position information of the alignment mark used for position alignment of the third shot area.
An exposure method in which a pattern of a disc is exposed to a first shot area of a substrate, and the pattern of the disc is exposed to a second shot area that overlaps with a part of the first shot area. A first measurement process for measuring the position of an alignment mark corresponding to the first shot area, and An exposure process that performs exposure based on the results measured in the first measurement process above, and It includes a determination process for determining whether to measure the alignment mark corresponding to the second shot area, and The above exposure process is, Based on the position information of the alignment mark measured in the first measurement process, position alignment of the first shot area is performed, and In the above determination process, if it is determined that measurement of the alignment mark corresponding to the second shot area is performed, the position alignment of the second shot area is performed without using the position information used for the position alignment of the first shot area, and In the above determination process, if it is determined that measurement of the alignment mark corresponding to the second shot area is not performed, the position alignment of the second shot area is performed using the position information used for the position alignment of the first shot area, and The above-determined determination process is characterized by determining whether to perform measurement of an alignment mark group corresponding to the second shot area based on at least one of the number of substrates processed, time, and the amount of energy of the exposure light.
An exposure method according to claim 1 or 2, wherein the alignment mark used for position alignment of the first shot area and position alignment of the second shot area is an alignment mark formed in an area where the first shot area and the second shot area overlap.
An exposure method according to claim 1 or 2, wherein the exposure process exposes the substrate while controlling the position alignment between the position of the original plate and the position of the substrate based on a correction amount regarding the position alignment of the shot area.
An exposure method according to claim 1 or 2, wherein the first measurement process measures an alignment mark corresponding to the first shot area while the relative positional relationship between the measurement unit, which measures the alignment mark in the first measurement process, and the substrate is in a first position.
An exposure method according to claim 1 or 2, wherein the first measurement process measures each alignment mark of the alignment mark group corresponding to the first shot area in parallel.
An exposure method according to claim 1, wherein the alignment mark used for position alignment of the second shot area and the position alignment of the third shot area is an alignment mark formed in an area where the second shot area and the third shot area overlap.
An exposure method according to claim 1, wherein the second measurement process measures a group of alignment marks corresponding to the third shot area while the relative positional relationship between the measurement unit, which performs measurement of alignment marks in the second measurement process, and the substrate is in a second position.
An exposure method according to claim 1, wherein the second measurement process measures each alignment mark of the alignment mark group corresponding to the third shot area in parallel.
An exposure method according to claim 1 or 2, characterized in that the first shot area is an area of the same size as the second shot area.
An exposure method according to claim 1 or 2, characterized in that the first shot area is an area of a different size from the second shot area.
It has a projection optical system that irradiates light from a light source onto a disc and transfers the pattern of the disc onto a substrate, An exposure apparatus characterized by exposing the substrate using the exposure method described in claim 1 or 2.
An exposure process for obtaining an exposed substrate by exposing a substrate using the exposure method described in claim 1 or 2, and The process includes developing the above-mentioned exposure substrate to obtain a developed substrate, and A method for manufacturing an article characterized by manufacturing an article from the above-mentioned developing substrate.
delete
delete

Description

Exposure method, exposure apparatus, and method of manufacturing article The present invention relates to an exposure method, an exposure apparatus, and a method for manufacturing an article. In the manufacture of liquid crystal panels or organic EL displays, an exposure device is used to expose a substrate (glass substrate) coated with a photosensitive material to a pattern of a base plate (mask) through a projection optical system. In recent years, the demand for large-area panels has increased, and consequently, there is a demand for a larger area of the region exposed by the exposure device. Japanese Patent Publication No. 2015-12258 discloses an exposure method called so-called connected exposure, in which parts of adjacent shot areas are exposed so that they overlap, and a large area of exposure area can be exposed. Figure 1 is a schematic diagram showing the configuration of an exposure device. Figure 2 is a diagram showing the arrangement of an alignment scope and an off-axis scope. FIG. 3 is a drawing showing the arrangement of the shot area in the first embodiment. Figure 4 is a flowchart illustrating the determination process of a shot area that omits measurement. FIG. 5 is a flowchart showing the flow of the exposure treatment in the first embodiment. Figure 6 is a diagram showing the arrangement of two shot areas. Figure 7 is a diagram showing the arrangement of four or more shot areas. FIG. 8 is a flowchart showing the flow of the exposure treatment in the second embodiment. Hereinafter, preferred embodiments of the present invention will be described in detail based on the accompanying drawings. In addition, in each drawing, the same reference numerals are used for identical components, and redundant descriptions are omitted. <First Embodiment> The configuration of the exposure device in the present embodiment is described. The exposure device in the present embodiment is a device used in the lithography process when manufacturing devices such as semiconductor devices or flat panel displays (FPDs). The exposure device forms a latent image pattern in the shot area of the substrate by transferring the pattern of the original plate (mask) onto a substrate coated with resist. The exposure device in the present embodiment illuminates the pattern of the original plate and transfers the pattern of the original plate to a plurality of areas on the substrate through a projection optical system. In the present embodiment, a step-and-scan type exposure device is described, but it is not limited thereto and may also be other exposure methods such as a step-and-repeat type. FIG. 1 is a schematic diagram illustrating the configuration of an exposure device (100) in the present embodiment. In the present embodiment, a coordinate system is defined by defining the plane on which the substrate (60) is loaded as the XY plane and the direction perpendicular to the XY plane as the Z direction. Additionally, a coordinate system is defined by defining the scanning direction of the disc (30) and the substrate (60) as the Y direction and the direction perpendicular to the Y direction within the XY plane as the X direction. The exposure device (100) has a plate stage (31) for loading a plate (30), a substrate stage (61) for loading a substrate (60), an illumination optical system (10) for illuminating the plate (30), and a projection optical system (40) for projecting a pattern of the plate (30) onto the substrate (60). Additionally, the exposure device (100) has a slit imaging system (20), a reflector (32, 62), a laser interferometer (33, 63), an X-blocking plate (50), a control unit (70), an alignment scope (80), and an off-axis scope (81). The plate (30) and the substrate (60) are positioned at positions that are optically approximately conjugate (the object surface and the top surface of the projection optical system (40)) through the projection optical system (40). A slit imaging system (20) for shaping the exposure light is disposed between the illumination optical system (10) and the plate stage (31). Additionally, an X-shaping plate (50) for sequentially exposing (hereinafter referred to as linked exposure) the pattern of the plate (30) to different areas of the substrate (60) so that parts of each overlap when scanning the substrate (60) is disposed between the projection optical system (40) and the substrate stage (61). The X-shaping plate (50) serves as a shielding plate for controlling the amount of exposure in the overlapping areas exposed by linked exposure. The control unit (70) controls the operation of each part of the exposure device (100). The illumination optical system (10) is composed of a light source unit, such as an ultra-high pressure mercury lamp or an LED light source not shown, a wavelength selection filter, a lens group, a shutter, etc. The illumination optical system (10) irradiates light of a wavelength suitable for exposure to a slit imaging system (20). The slit imaging system (20) ha