KR-102961570-B1 - METHOD OF TREATING SUBSTRATE AND SUBSTRATE TREATING APPARATUS PERFORMING THE SAME
Abstract
A substrate processing method may include the steps of: positioning a mask assembly, comprising a mask sheet defining at least one opening and a mask frame fixing the mask sheet, on a substrate located in the internal space of a process chamber; supplying a process gas in a plasma state to the substrate; detecting an electrical signal of the mask assembly; and determining whether arcing occurs in the mask assembly based on the detected electrical signal.
Inventors
- 서정한
- 이병춘
- 유형석
- 허성민
Assignees
- 삼성디스플레이 주식회사
Dates
- Publication Date
- 20260508
- Application Date
- 20210701
Claims (20)
- A step of positioning a mask assembly comprising a mask sheet defining at least one opening and a mask frame fixing the mask sheet on a substrate located in the internal space of a process chamber; A step of supplying a process gas in a plasma state to the above substrate; A step of detecting an electrical signal of the mask assembly using a detection sensor positioned adjacent to the mask frame; and It includes a step of determining whether arcing has occurred in the mask assembly based on the detected electrical signal, and A substrate processing method characterized in that the step of detecting the electrical signal and the step of determining whether arcing occurs are performed in real time.
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- In Article 1, A substrate processing method characterized by further including the step of stopping the supply of the process gas when it is determined that arcing has occurred in the mask assembly.
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- In Article 1, A substrate processing method characterized in that the detection sensor is a contact sensor that contacts the mask frame.
- In Article 1, A substrate processing method characterized in that the detection sensor is a non-contact sensor spaced apart from the mask frame.
- A process chamber providing an internal space where a substrate is processed; A susceptor on which the above substrate is mounted; A gas supply unit that supplies a process gas in a plasma state to the above substrate; A mask assembly comprising a mask sheet positioned on the substrate and defining at least one opening, and a mask frame for fixing the mask sheet; A detection sensor disposed adjacent to the mask frame and detecting an electrical signal of the mask assembly; and A substrate processing device comprising a determination unit that determines whether arcing occurs in the mask assembly based on the detected electrical signal.
- In Article 7, A substrate processing apparatus characterized in that the mask sheet and the mask frame each comprise a conductive material and are electrically connected to each other.
- In Article 7, A substrate processing device characterized in that the detection sensor is a contact sensor that contacts the mask frame.
- In Article 7, A substrate processing device characterized in that the detection sensor is a non-contact sensor spaced apart from the mask frame.
- In Article 7, A substrate processing apparatus characterized by the above-described susceptor comprising a body portion on which the substrate is placed, a peripheral portion located on the outside of the body portion on which the mask frame is disposed, and a protrusion portion protruding from the body portion and exposed to the outside of the process chamber.
- In Article 11, A first penetration portion is formed in the above susceptor that penetrates the periphery, the body portion, and the protrusion, and A substrate processing device characterized in that the detection sensor is positioned adjacent to the mask frame through the first penetration part.
- In Article 12, A substrate processing device characterized by including a detection line disposed inside the first penetration portion formed in the susceptor and comprising a first end connected to the detection sensor and a second end exposed to the outside of the first penetration portion.
- In Article 13, A substrate processing device characterized by the above-mentioned judgment unit being connected to the second end of the above-mentioned detection line.
- In Article 12, A substrate processing apparatus characterized by further including a support member disposed between the periphery of the susceptor and the mask frame to support the mask assembly.
- In Article 15, A second through-hole is formed in the above-mentioned support member that overlaps with the first through-hole, and A substrate processing device characterized in that the detection sensor is positioned adjacent to the mask frame through the first penetration and the second penetration.
- In Article 15, The above-mentioned support member has a lower surface that meets the first penetration portion, and A recess is formed on the lower surface of the above-mentioned support member that overlaps with the first penetration portion, and A substrate processing device characterized in that the detection sensor is positioned adjacent to the mask frame through the first penetration portion and the recess portion.
- In Article 16, A substrate processing device characterized in that the above-mentioned support member is formed of a ceramic material.
- In Article 16, A substrate processing device characterized in that the above-mentioned support member is formed of a metal material.
- In Article 7, A substrate processing apparatus characterized by further including a control unit that communicates with the above-mentioned judgment unit and stops the supply of the process gas when it is determined that arcing has occurred in the mask assembly.
Description
Method of treating a substrate and substrate treating apparatus performing the same The present invention relates to a substrate processing method and a substrate processing apparatus for performing the same. More specifically, the present invention relates to a substrate processing method for detecting arcing occurring in a process in the display field and a substrate processing apparatus for performing the same. The Plasma Enhanced Chemical Vapor Deposition (PECVD) process is widely used in the display field because it allows for the deposition of semiconductor and dielectric thin films over a large area at a relatively low cost and at low temperatures. In this process, a mask assembly is used to ensure that only the deposition area on the substrate is exposed to a process gas in a plasma state. Accordingly, an anode, cathode, organic film, pixel, etc., having a predetermined pattern or shape can be formed on the substrate. However, arcing may occur due to a high voltage difference between the mask assembly and the area around the mask assembly. In the past, sensors were used to detect arcing, but in high-capacity PECVD processes, the detection of arcing is performed at a distance from the mask assembly, which leads to a problem of reduced accuracy. Accordingly, a new method and a new device are required to detect arcing occurring in the above mask assembly. FIG. 1 is a drawing showing a substrate processing apparatus according to one embodiment of the present invention. FIG. 2 is a plan view showing a mask assembly included in the substrate processing device of FIG. 1. Figure 3 is an enlarged view showing an example of area 'A' of Figure 1. Figure 4 is an enlarged view showing another example of area 'A' in Figure 2. Figure 5 is a drawing showing a susceptor included in the substrate processing device of Figure 1. FIG. 6 is a drawing showing an example of a support member included in the substrate processing device of FIG. 1. FIG. 7 is a drawing showing another example of a support member included in the substrate processing device of FIG. 1. FIG. 8 is a flowchart illustrating a substrate processing method according to one embodiment of the present invention. Hereinafter, a substrate processing method and a substrate processing apparatus according to embodiments of the present invention will be described in detail with reference to the attached drawings. FIG. 1 is a drawing showing a substrate processing apparatus according to one embodiment of the present invention. Referring to FIG. 1, the substrate processing device (1000) according to one embodiment of the present invention may include a process chamber (100), a susceptor (200), a gas supply unit (300), a mask assembly (400), a detection sensor (500), a support member (600), a detection line (700), a judgment unit (800), and a control unit (900). The process chamber (100) can define an internal space (110). That is, the process chamber (100) can provide an internal space (110) where a substrate (10) is processed. The gas supply unit (300) can supply process gas in a plasma state to the substrate (10). The gas supply unit (300) may include a shower head assembly that converts raw materials such as source gas, reaction gas, and reduction gas into process gas in a plasma state. The shower head assembly may be provided with an electrode structure. By high-frequency power applied to the electrode structure, the raw materials are converted into plasma, and a plasma deposition process on the substrate (10) can be performed. The susceptor (200), the gas supply unit (300), the mask assembly (400), the detection sensor (500), the support member (600), and the detection line (700) may be placed in the internal space (110) provided by the process chamber (100). However, a part of the susceptor (200) and a part of the detection line (700) may be exposed to the outside of the process chamber (100). Additionally, the judgment unit (800) and the control unit (900) may be placed outside the process chamber (100). FIG. 2 is a plan view showing a mask assembly included in the substrate processing device of FIG. 1. Referring to FIGS. 1 and 2, the mask assembly (400) may include a mask sheet (410) and a mask frame (420). The mask sheet (410) is positioned on the substrate (10) and can define at least one opening (413). For example, the mask sheet (410) may be a flat plate having a rectangular shape. The mask frame (420) can be combined with the mask sheet (410) to fix the mask sheet (410). For example, the mask frame (420) can fix the mask sheet (410) by having a left frame, a right frame, an upper frame, and a lower frame positioned around the mask sheet (410). That is, the mask frame (420) can surround the mask sheet (410) on a flat surface. The mask sheet (410) and the mask frame (420) may each include a conductive material. Accordingly, the mask frame (420) may be electrically connected to the mask sheet (410). Figure 3 is an enlarged view showing an example of area