KR-102961585-B1 - SEMICONDUCTOR WAFERS PROCESSING DEVICE

Abstract

A semiconductor wafer processing device according to one embodiment of the present invention comprises: a tank filled with a solution required for a process; a heating unit for etching or heating the solution in a primary manner; a plurality of quartz tubes for supplying the solution heated in a primary manner from the heating unit to each semiconductor wafer; a tube heating unit located in each quartz tube for heating the solution heated in a primary manner in a secondary manner; and a control unit for controlling the temperature of the solution supplied from the quartz tube to the semiconductor wafer.

Inventors

• 권재현
• 성택영
• 천성우

Assignees

• 에스아이콘 주식회사

Dates

Publication Date

20260507

Application Date

20240328

Claims (5)

1. In a semiconductor wafer processing apparatus, A tank filled with the solution required for the process; A heating unit that heats the above solution in the first step; A plurality of quartz tubes comprising a plurality of straight sections extending in a straight line and at least one curved section located between the straight sections and formed by bending, wherein the solution heated first from the heating unit is supplied to each semiconductor wafer; A tube heating unit positioned at each straight section of the quartz tube to heat the quartz tube, thereby heating the solution heated in the first step to a second step; Temperature sensors located at the discharge portion of the quartz tube and at each bending section of the quartz tube; and It includes a control unit that controls the temperature of the solution supplied from the above quartz tube to the semiconductor wafer, and The above tube heating unit includes a conductive film coated on the quartz tube, electrode terminals located at both ends of the conductive film, and a power supply unit electrically connected to the electrode terminals to supply voltage to the electrode terminals. A semiconductor wafer processing apparatus in which the above-described control unit controls each tube heating unit based on the length of the quartz tube and the temperature of the solution received by the temperature sensor, thereby setting the heating temperature of the plurality of tube heating units differently for each quartz tube and the daily section, and setting the heating temperature of the tube heating unit to increase as it moves further away from the heating unit to sequentially heat the solution, and controlling the temperature of the solution at the discharge part of the quartz tube to correspond to a set temperature set for each wafer.
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Description

Semiconductor Wafer Processing Device The present invention relates to an apparatus for processing semiconductor wafers. Typically, semiconductor devices are manufactured by performing processes such as deposition, ion implantation, photolithography, and etching. As semiconductor devices undergo miniaturization and high integration, micro-contamination caused by impurity particles or various contaminants generated during the aforementioned processes significantly affects product yield and reliability; therefore, all wafers must always be maintained in a clean state during the processes. Therefore, etching or cleaning technology can be considered the most fundamental technology in semiconductor manufacturing, and it is an essential process that bridges the gaps between semiconductor processes. Generally, strong acids such as hydrochloric acid, sulfuric acid, phosphoric acid, and hydrofluoric acid can be used as solutions for etching or cleaning in the wafer manufacturing process. In addition, an SC-1 solution containing ammonia water and hydrogen peroxide can also be used. A wafer can be etched or cleaned by immersing the wafer in a reservoir containing a strong acidic solution or by spraying the strong acidic solution onto the wafer through a spray nozzle. In this case, there are instances where a solution at a temperature higher than room temperature is required for an active reaction. To achieve this, the chuck holding the wafer can be heated, or a solution such as hydrogen peroxide can be added to increase the temperature by utilizing the exothermic reaction with the acidic solution, which can then be used in the etching or cleaning process. However, heating the chuck is inefficient due to the complex structure and the heating of the wafer, and there is a problem in that it is difficult to control the temperature accurately when the temperature is raised by mixing a solution such as hydrogen peroxide with a solution for etching or cleaning. FIG. 1 is a schematic diagram of a semiconductor wafer processing apparatus according to one embodiment of the present invention. FIG. 2 is an exemplary diagram of a quartz tube and a tube heating unit according to one embodiment of the present invention. Embodiments of the present invention are described below with reference to the attached drawings to enable those skilled in the art to easily implement the invention. However, the present invention may be embodied in various different forms and is not limited to the embodiments described herein. Furthermore, in order to clearly explain the present invention in the drawings, parts unrelated to the explanation have been omitted, and similar parts throughout the specification are denoted by similar reference numerals. Throughout this specification, when a part is described as being "connected" to another part, this includes not only cases where they are "directly connected" but also cases where they are "electrically connected" with other elements interposed between them. Furthermore, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components, and it should be understood that this does not preclude the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof. The following examples are detailed descriptions to aid in understanding the present invention and are not intended to limit the scope of the present invention. Accordingly, inventions within the same scope that perform the same function as the present invention will also fall within the scope of the present invention. The present invention relates to a semiconductor wafer processing apparatus (100). FIG. 1 is a schematic diagram of a semiconductor wafer processing apparatus (100) according to one embodiment of the present invention, and FIG. 2 is an exemplary diagram of a quartz tube (130) and a tube heating unit (140) according to one embodiment of the present invention. A semiconductor wafer processing device (100) may include a device for heating a solution for etching or cleaning a semiconductor wafer and supplying the heated high-temperature solution to a plurality of semiconductor wafers (W). Additionally, as shown in FIG. 1, the semiconductor wafer processing device (100) may be configured such that a solution is supplied to at least one semiconductor wafer (W) located within a single chamber (C) through a quartz tube (130). However, it is not limited to this, and may be configured such that a wafer is provided in each of a plurality of chambers (C), and a solution is supplied to each of the plurality of chambers through a quartz tube (130). A semiconductor wafer processing device (100) includes a tank (110), a heating unit (120), a plurality of quartz tubes (130), a tube heating unit (140), and a control unit (not shown). The tank (110) is filled with a solution