KR-102961634-B1 - Methods and apparatus for mixing layers for enhanced metal reflow

Abstract

Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method for filling features on a substrate comprises: a step of depositing a first metallic material on a substrate and on a feature disposed on the substrate through a chemical vapor deposition (CVD) process at a first temperature in a first process chamber; a step of depositing a second metallic material on the first metallic material at a second temperature and a first bias power in a second process chamber to form a seed layer of the second metallic material; a step of etching the seed layer at a second bias power greater than the first bias power in a second process chamber to form an intermix layer comprising the first metallic material and the second metallic material in the feature; and a step of heating the substrate to a third temperature higher than the second temperature to cause reflow of the second metallic material.

Inventors

• 종, 란란
• 장, 푸홍
• 센, 강
• 첸, 펑
• 리, 루이
• 시에, 시안진
• 하, 태 홍
• 탕, 시안민

Assignees

• 어플라이드 머티어리얼스, 인코포레이티드

Dates

Publication Date

20260507

Application Date

20210914

Priority Date

20200915

Claims (20)

1. As a method of filling features on a substrate, A step of depositing a first metallic material on a substrate and within a feature disposed on the substrate through a chemical vapor deposition (CVD) process at a first temperature in a first process chamber, wherein the first metallic material is deposited without bias power; A step of forming a seed layer of a second metallic material by depositing the second metallic material on the first metallic material in a second process chamber at a second temperature and a first bias power, wherein the second temperature is 20 to 350 degrees Celsius; A step of etching a portion of the seed layer at a second bias power greater than the first bias power in the second process chamber to form an intermix layer comprising the first metallic material and the second metallic material within the above feature; and A step of heating the substrate to a third temperature higher than the second temperature to reflow at least a portion of the remaining portion of the second metallic material to at least partially fill the feature. A method for filling features on a substrate, including
2. In paragraph 1, A step of depositing an additional second metallic material on the seed layer at the second temperature in the second process chamber; and A step of heating the substrate to the third temperature after depositing the additional second metallic material in order to reflow the additional second metallic material. A method for charging features on a substrate, further comprising
3. In paragraph 1, A method for charging features on a substrate, wherein the first bias power and the second bias power have a frequency of 2 MHz to 200 MHz.
4. In paragraph 1, The first bias power is 5 watts to 120 watts; and The above second bias power is 120 watts to 1000 watts. A method for charging features on a substrate, at least one of which.
5. In paragraph 1, A method for charging features on a substrate, wherein the first temperature is 150 to 250 degrees Celsius.
6. In paragraph 1, A method for charging features on a substrate, wherein the third temperature is 100 to 400 degrees Celsius.
7. In paragraph 1, A method for filling features on a substrate, wherein the above-mentioned second metallic material is deposited in a PVD (physical vapor deposition) chamber.
8. In any one of paragraphs 1 through 7, A method for filling features on a substrate, wherein the second metallic material comprises copper, cobalt, or aluminum.
9. In any one of paragraphs 1 through 7, A method for filling features on a substrate, wherein the first metallic material is cobalt, tungsten, aluminum, silver, ruthenium, rhodium, iridium, or tantalum.
10. In any one of paragraphs 1 through 7, Before depositing the second metallic material on the substrate, a step of positioning the substrate at a deposition position; and Before heating the substrate, a step of positioning the substrate at an elevated heating position above the deposition position. A method for charging features on a substrate, further comprising
11. In any one of paragraphs 1 through 7, The first process chamber and the second process chamber are part of a multi-chamber processing tool, and Each of the first process chamber and the second process chamber is operably coupled to a vacuum transfer chamber, and A method for filling features on a substrate, wherein the deposition of the first metallic material and the deposition of the second metallic material are performed without vacuum breakdown.
12. In any one of paragraphs 1 through 7, A method for filling features on a substrate, wherein the thickness of the first metallic material to be deposited is less than 30 Angstroms.
13. As a non-transient computer-readable medium in which instructions are stored, When the above commands are executed, a method for filling features on a substrate is performed, and The above method comprises the method of any one of claims 1 to 7, A non-transient computer-readable medium in which commands are stored.
14. In Paragraph 13, The second metallic material is a non-transient computer-readable medium in which instructions are stored, comprising copper, cobalt, or aluminum.
15. In Paragraph 13, The above method further comprises the step of positioning the substrate at a first position before depositing the second metallic material on the substrate, a non-transient computer-readable medium storing instructions.
16. In Paragraph 13, The above method further comprises the step of positioning the substrate at a second position above a first position before heating the substrate, in a non-transient computer-readable medium storing instructions.
17. In Paragraph 13, The first process chamber and the second process chamber are part of a multi-chamber processing tool, and Each of the first process chamber and the second process chamber is a non-transient computer-readable medium storing instructions, which is operably coupled to a vacuum transfer chamber.
18. In Paragraph 13, A non-transient computer-readable medium in which instructions are stored, wherein the thickness of the first metallic material to be deposited is less than 30 Angstroms.
19. In Paragraph 13, A non-transient computer-readable medium in which instructions are stored, wherein the first metallic material is cobalt, tungsten, aluminum, silver, ruthenium, rhodium, iridium, or tantalum.
20. delete

Description

Methods and apparatus for mixing layers for enhanced metal reflow [0001] The embodiments of the present disclosure generally relate to semiconductor processing of semiconductor substrates. [0002] Semiconductor devices, such as integrated circuits (ICs), generally have electronic circuit elements, such as transistors, diodes, and resistors, that are fabricated integrally on a single body of semiconductor material (e.g., a wafer or a substrate). Various circuit elements are connected via conductive connectors to form a complete circuit that can contain millions of individual circuit elements. Interconnects provide electrical connections between the various electronic elements of an integrated circuit and form connections between circuit elements and the device's external contact elements (e.g., pins) to connect the integrated circuit to other circuits. Interconnects can be configured across multiple layers and connected within or between layers by trenches/vias. As the demand for increasingly smaller form factors continues, interconnects must also be scaled down to enable smaller form factors of semiconductor devices. Trenches/vias having 3nm node structures and node structures exceeding this pose difficulties during formation due to their small sizes. Reflow processes are often used as a method to fill trenches/vias. However, the inventors have discovered that conventional reflow processes can leave voids in trenches/vias for smaller form factors of semiconductor devices. [0003] Accordingly, the inventors have provided improved methods and apparatus for filling features on a substrate. [0004] Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method for filling features on a substrate comprises: a step of depositing a first metallic material on a substrate and in a feature disposed on the substrate by a chemical vapor deposition (CVD) process at a first temperature in a first process chamber; a step of depositing a second metallic material on the first metallic material at a second temperature and a first bias power in a second process chamber to form a seed layer of the second metallic material; a step of etching the seed layer at a second bias power greater than the first bias power in a second process chamber to form an intermix layer comprising the first metallic material and the second metallic material in the feature; and a step of heating the substrate to a third temperature higher than the second temperature to cause reflow of the second metallic material in the feature. [0005] In some embodiments, a method for filling features on a substrate comprises: a step of depositing a first metallic material into features on a substrate through a chemical vapor deposition (CVD) process at a first temperature in a first process chamber; a step of depositing a copper-containing material on the first metallic material through a physical vapor deposition (PVD) process at a second temperature and a first bias power in a second process chamber to form a seed layer; a step of etching the seed layer at a second bias power greater than the first bias power to form a mixed layer containing the copper-containing material and the first metallic material within the features; and a step of heating the substrate to a third temperature higher than the second temperature to reflow the copper-containing material on the substrate. [0006] In some embodiments, instructions are stored in a non-transient computer-readable medium, and when these instructions are executed, a method for filling features on a substrate is performed, the method comprising: a step of depositing a first metallic material on a substrate and in a feature disposed on the substrate through a chemical vapor deposition (CVD) process at a first temperature in a first process chamber; a step of depositing a second metallic material on the first metallic material at a second temperature and a first bias power in a second process chamber to form a seed layer of the second metallic material; a step of etching the seed layer at a second bias power greater than the first bias power in a second process chamber to form a mixed layer comprising the first metallic material and the second metallic material in the feature; and a step of heating the substrate to a third temperature higher than the second temperature to cause reflow of the second metallic material in the feature. [0007] Other and additional embodiments of the present disclosure are described below. [0008] Embodiments of the present disclosure, briefly summarized above and discussed in more detail below, may be understood by reference to exemplary embodiments of the present disclosure illustrated in the accompanying drawings. However, since the accompanying drawings illustrate only typical embodiments of the present disclosure, they should not be construed as limiting the scope, as the present disclosure may allow for other equally valid embodiments. [0009] FI