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KR-102961666-B1 - Substrate processing device and method for adjusting processing conditions

KR102961666B1KR 102961666 B1KR102961666 B1KR 102961666B1KR-102961666-B1

Abstract

A substrate processing device for processing a substrate comprises a heat processing unit for performing heat treatment on a substrate, an imaging unit for imaging the substrate, and a control unit, wherein the control unit is configured to execute an adjustment process for adjusting the conditions of processing the substrate, and the adjustment process comprises: a pre-exposure imaging process for controlling the imaging unit so that an unexposed adjustment substrate having a resist film formed thereon is imaged; a heat treatment process for controlling the heat processing unit so that heat treatment is performed on the adjustment substrate, which has undergone uniform exposure treatment in which each area of the substrate surface is exposed with a constant amount of exposure after the pre-exposure imaging process; a post-heating imaging process for controlling the imaging unit so that the adjustment substrate is imaged after the heat treatment process; a temperature distribution estimation process for estimating the in-plane temperature distribution of the adjustment substrate during the heat treatment based on the imaging result from the pre-exposure imaging process and the imaging result from the post-heating imaging process; and the result of the estimation of the in-plane temperature distribution of the adjustment substrate Based on this, it includes a heat treatment condition determination process for determining the processing conditions of the above heat treatment.

Inventors

  • 타도코로 마사히데
  • 에노모토 마사시
  • 야마무라 켄타로

Assignees

  • 도쿄엘렉트론가부시키가이샤

Dates

Publication Date
20260508
Application Date
20200710
Priority Date
20190719

Claims (15)

  1. As a substrate processing device for processing substrates, A heat treatment unit that performs heat treatment on a substrate, and An imaging unit that images a substrate, and Having a control unit, The above control unit is configured to execute an adjustment process that adjusts the conditions for processing on the substrate, and The above adjustment process is, A pre-exposure imaging process for controlling the imaging unit so that an unexposed adjustment substrate having a resist film formed thereon is imaged, and A heat treatment process for controlling the heat treatment unit so that the heat treatment is performed on the adjustment substrate, which has undergone uniform exposure treatment in which each area of the substrate surface is exposed to a constant amount of exposure after the above-mentioned pre-exposure imaging process, and After the above heat treatment process, a post-heating imaging process for controlling the imaging unit so that the adjustment substrate is imaged, and A temperature distribution estimation process for estimating the in-plane temperature distribution of the adjustment substrate during heat treatment based on the imaging result in the imaging process before exposure and the imaging result in the imaging process after heating, and The process includes a heat treatment condition determination process for determining the heat treatment conditions based on the estimation result of the in-plane temperature distribution of the above-mentioned adjustment substrate, and The above-mentioned pre-exposure imaging process and the above-mentioned post-heating imaging process each acquire an image for each of a plurality of different wavelengths, and A substrate processing apparatus that, in the above temperature distribution estimation process, selects one of the above different plurality of wavelengths according to the film thickness of the above resist film and estimates the in-plane temperature distribution of the above adjustment substrate during heat treatment based on the above captured image for the selected wavelength.
  2. In Article 1, A substrate processing device having an exposure unit that performs uniform exposure processing, which is different from an external exposure device that performs exposure processing during actual processing.
  3. In Article 1, A substrate processing device in which the above uniform exposure treatment is performed by an external exposure device that performs exposure treatment during actual processing.
  4. In Article 1, A substrate processing device in which the above constant exposure amount is less than the exposure amount during actual processing.
  5. delete
  6. In Article 1, Having a developing unit that performs developing processing on a substrate, The above adjustment process is, A developing process that controls the developing processing unit so that the developing process is performed on the adjusting substrate after the above heat treatment process, and After the above development processing process, a post-development imaging process that controls the imaging unit so that the adjustment substrate is imaged, and A film thickness distribution estimation process for estimating the in-plane distribution of the film thickness of the resist film after the development process on the adjustment substrate based on the imaging result in the imaging process after the above development, and A substrate processing apparatus comprising a process for determining development processing conditions, which determines the processing conditions of the development processing based on the estimation result of the in-plane distribution of the above film thickness.
  7. In Article 1, A removal unit having a removal process for removing the resist film on a substrate, The above adjustment process is, A removal process for controlling the removal unit so that the resist film formed on the adjustment substrate is removed, and After the above removal process, a post-removal imaging process that controls the imaging unit so that the adjustment substrate is imaged, and A substrate processing apparatus comprising a determination process for determining whether to reuse the adjustment substrate based on the imaging result in the imaging process after the above removal.
  8. In Article 1, The above control unit is, A substrate processing apparatus configured to initiate the adjustment processing based on the result of estimating the line width of a resist pattern formed on a substrate during actual processing.
  9. In Article 1, The above control unit is, A substrate processing apparatus configured to initiate an adjustment process for processing conditions of a processing portion of a substrate based on the image result of a processing portion of a substrate during actual processing.
  10. In Article 1, The above heat treatment unit is, A heating plate on which a substrate is placed, and A cover body covering a substrate on the above-mentioned heating plate, and A substrate processing device having a temperature control mechanism for adjusting the temperature of the above-mentioned cover.
  11. As a method for adjusting processing conditions for adjusting processing conditions for a substrate, A pre-exposure imaging process for imaging an unexposed adjustment substrate having a resist film formed thereon, and A uniform exposure process that, after the above-mentioned pre-exposure imaging process, performs a uniform exposure treatment on the adjustment substrate to expose each region of the substrate surface with a constant amount of exposure, and A heat treatment process for performing heat treatment on the adjustment substrate after the above uniform exposure process, and After the above heat treatment process, a post-heating imaging process for imaging the adjustment substrate, and A temperature distribution estimation process for estimating the in-plane temperature distribution of the adjustment substrate during heat treatment based on the imaging result in the imaging process before exposure and the imaging result in the imaging process after heating, and The process includes a heat treatment condition determination process for determining the treatment conditions during the heat treatment based on the estimation result of the in-plane temperature distribution of the above-mentioned adjustment substrate, and The above-mentioned pre-exposure imaging process and the above-mentioned post-heating imaging process each acquire an image for each of a plurality of different wavelengths, and The above temperature distribution estimation process is a method for adjusting processing conditions, wherein one of the above different plurality of wavelengths is selected according to the film thickness of the above resist film, and the in-plane temperature distribution of the above adjustment substrate during heat treatment is estimated based on the above captured image for the selected wavelength.
  12. In Article 11, A method for adjusting processing conditions, wherein the above constant exposure amount is less than the exposure amount during actual processing.
  13. delete
  14. In Article 11, After the above heat treatment process, a developing process for performing a developing process on the above adjustment substrate, and, After the above-mentioned development processing process, a post-development imaging process for imaging the adjustment substrate, and A film thickness distribution estimation process for estimating the in-plane distribution of the film thickness of the resist film after the development process on the adjustment substrate based on the imaging result in the imaging process after the above development, and A process for determining development conditions that determines the processing conditions of the development process based on the estimation result of the in-plane distribution of the above film thickness. A method for adjusting processing conditions, including
  15. In Article 11, A removal process in which the resist film formed on the above-mentioned adjustment substrate is removed, and After the above removal process, a post-removal imaging process in which the adjustment substrate is imaged, and A determination process for determining whether to reuse the adjustment substrate based on the imaging result in the imaging process after the above removal. A method for adjusting processing conditions, including

Description

Substrate processing device and method for adjusting processing conditions The present disclosure relates to a substrate processing apparatus and a method for adjusting processing conditions. Patent Document 1 discloses a substrate processing method for uniformly forming a resist pattern of a desired line width on a wafer. In this substrate processing method, the film thickness distribution of a resist film formed on a wafer is obtained before exposure in an exposure device. Then, pattern exposure is performed on the wafer on which the resist film is formed. Next, a heat treatment is performed on the resist film after the pattern exposure. Subsequently, the film thickness distribution of the resist film after the heat treatment is obtained, and film thickness difference data is calculated from the film thickness distribution before exposure and the film thickness distribution after the heat treatment. Next, by referring to a line width correlation data table, a line width (estimated line width) corresponding to the film thickness difference data is calculated within the plane of the wafer. If the calculated estimated line width is non-uniform within the plane of the wafer, a second heat treatment is performed on the resist film. The conditions for this heat treatment are set so that the heating temperature of the region with a large estimated line width is higher than the heating temperature of other regions. Then, a development process is performed on the resist film that has undergone the second heat treatment. FIG. 1 is a plan view showing a schematic configuration of a substrate processing system according to a first embodiment. FIG. 2 is a front view showing a schematic configuration of a substrate processing system according to a first embodiment. FIG. 3 is a rear view showing a schematic configuration of a substrate processing system according to a first embodiment. Figure 4 is a cross-sectional view showing a schematic configuration of the development processing unit. Figure 5 is a cross-sectional view showing a schematic configuration of the development processing unit. Figure 6 is a cross-sectional view showing a schematic configuration of a heat treatment unit. Figure 7 is a cross-sectional view showing a schematic configuration of a heat treatment unit. Figure 8 is a plan view showing a schematic configuration of the heating plate of the heat treatment unit. Figure 9 is a cross-sectional view showing a schematic configuration of a defect inspection unit. FIG. 10 is a cross-sectional view showing a schematic configuration of a defect inspection unit. Figure 11 is a flowchart illustrating the adjustment of processing conditions for PEB processing. Figure 12 is a conceptual diagram of a temperature distribution estimation method. Figure 13 is a flowchart illustrating a method for obtaining a calibration curve for wafer temperature during PEB processing. FIG. 14 is a flowchart illustrating the adjustment of processing conditions according to the second embodiment. FIG. 15 is a flowchart illustrating a method for obtaining a calibration curve for the film thickness of a resist film after development and a correction curve for determining development conditions. FIG. 16 is a front view showing a schematic internal configuration of a substrate processing device according to a third embodiment. FIG. 17 is a cross-sectional view showing a schematic configuration of a heat treatment unit having a substrate processing device according to a fourth embodiment. FIG. 18 is a front view showing a schematic internal configuration of a substrate processing device according to a fifth embodiment. In the photolithography process for the manufacturing process of semiconductor devices, etc., a series of treatments is performed to form a predetermined resist pattern on a semiconductor wafer (hereinafter referred to as "wafer"). The series of treatments includes, for example, a resist coating treatment in which a resist liquid is supplied onto the wafer to form a resist film, and an exposure treatment in which the resist film is exposed to light in a predetermined pattern. Furthermore, the series of treatments includes a heat treatment (Post Exposure Bake (PEB) treatment) to promote a chemical reaction within the resist film after exposure, and a development treatment in which the exposed resist film is developed. The wafer temperature during PEB processing has a significant impact on the linewidth of the resist pattern ultimately formed on the wafer. Furthermore, it is required that the linewidth of the resist pattern be formed uniformly within the plane. Accordingly, a heat treatment device for performing PEB processing is provided with multiple heating zones, and each heating zone is capable of setting a different temperature. In setting the temperature of each heating zone, conventionally, a series of resist pattern formation processes were performed on a test wafer, the line width of the resist pattern was measure