KR-102961763-B1 - Systems and methods for removing aluminum-containing films

Abstract

Exemplary etching methods may include the step of flowing a halogen-containing precursor into a substrate processing area of a semiconductor processing chamber. The halogen-containing precursor may be characterized by a gas density of about 5 g/L or more. The methods may include the step of contacting a substrate contained in the substrate processing area with the halogen-containing precursor. The substrate may define an exposed area of an aluminum-containing material. The contact may produce an aluminum halide material. The methods may include the step of flowing an etchant precursor into the substrate processing area. The methods may include the step of contacting the aluminum halide material with the etchant precursor. The methods may include the step of removing the aluminum halide material.

Inventors

• 쿠이, 젠지앙
• 왕, 안추안
• 레디, 로한 풀리고루
• 첸, 시아오린

Assignees

• 어플라이드 머티어리얼스, 인코포레이티드

Dates

Publication Date

20260507

Application Date

20210907

Priority Date

20200911

Claims (20)

1. As an etching method, A step of flowing a halogen-containing precursor into a substrate processing area of a semiconductor processing chamber - the halogen-containing precursor is characterized by a gas density of 5 g/L or more -; A step of contacting a substrate housed in the substrate processing area with the halogen-containing precursor - the substrate defines an exposed area of an aluminum-containing material, and the contacting step generates an aluminum halide material -; A step of flowing an etchant precursor into the substrate processing area; A step of contacting the above aluminum halide material with the above etchant precursor; and A step of removing the aluminum halide material to expose a layer of semiconductor material beneath the aluminum halide material. Includes, An etching method comprising plasma effluents of a fluorine-containing precursor, wherein the above halogen-containing precursor comprises the above halogen-containing precursor.
2. delete
3. delete
4. In paragraph 1, The above aluminum-containing material is an etching method comprising aluminum oxide.
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6. In paragraph 1, The above etching method is an etching method performed at a temperature of 300 ℃ or higher.
7. In paragraph 1, The above etching method is an etching method performed at a pressure of 0.1 Torr or higher.
8. In Paragraph 7, The above etching method is an etching method performed at a pressure of 50 Torr or less.
9. In paragraph 1, An etching method further comprising a pretreatment performed before flowing the halogen-containing precursor, wherein the pretreatment comprises the step of contacting the substrate with a plasma comprising one or more of oxygen, hydrogen, or nitrogen.
10. In paragraph 1, An etching method further comprising a post-processing step performed subsequently to the above etching method, wherein the post-processing step comprises contacting the substrate with a plasma comprising one or more of oxygen, hydrogen, or nitrogen.
11. As an etching method, A step of forming a plasma of a treatment precursor containing one or more of oxygen, hydrogen, or nitrogen to generate treatment plasma effluents; A step of flowing the above-mentioned processing plasma effluents into a substrate processing area of a semiconductor processing chamber; A step of contacting a substrate housed in the substrate processing area with the processing plasma effluents - wherein the substrate defines an exposed area of the aluminum-containing material, and the processing plasma effluents are configured to remove residues from the surface of the aluminum-containing material -; A step of flowing a first halogen-containing material into the substrate processing area of the semiconductor processing chamber; A step of contacting the above substrate with the above first halogen-containing material; A step of flowing a second halogen-containing precursor into the substrate processing area of the semiconductor processing chamber; and Step of removing the aluminum-containing material to expose a layer of semiconductor material beneath the aluminum-containing material Includes, An etching method in which the first halogen-containing material comprises plasma effluents of a fluorine-containing precursor.
12. In Paragraph 11, The above second halogen-containing precursor comprises boron trichloride, in an etching method.
13. In Paragraph 11, An etching method further comprising the step of stopping the plasma formation before flowing the first halogen-containing material.
14. In Paragraph 11, The above etching method is an etching method performed at a temperature of 300 ℃ or higher.
15. In Paragraph 11, The above etching method is an etching method performed at a pressure of 0.1 Torr or higher.
16. In Paragraph 11, An etching method further comprising a post-processing step performed subsequently to the above etching method, wherein the post-processing step comprises contacting the substrate with a plasma comprising one or more of oxygen, hydrogen, or nitrogen.
17. As an etching method, A step of flowing a fluorine-containing precursor into a substrate processing area of a semiconductor processing chamber - the fluorine-containing precursor is characterized by a gas density of 5 g/L or more -; A step of contacting a substrate housed in the substrate processing area with the fluorine-containing precursor - the substrate defines an exposed area of the aluminum-containing material -; A step of flowing a chlorine-containing precursor into the substrate processing area of the semiconductor processing chamber; A step of contacting the above substrate with the above chlorine-containing precursor; A step of removing the aluminum-containing material to expose a layer of semiconductor material beneath the aluminum-containing material; A step of forming a plasma of a treatment precursor containing one or more of oxygen, hydrogen, or nitrogen to generate treatment plasma effluents; and A step of contacting the above substrate with the above processing plasma effluents Includes, An etching method comprising plasma effluents of the fluorine-containing precursor.
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20. In Paragraph 17, The above etching method is an etching method performed at a temperature of 300°C or higher and at a pressure of 0.1 Torr or higher.

Description

Systems and methods for removing aluminum-containing films Cross-reference regarding related applications This application claims the benefit and priority thereto of U.S. Official Application No. 17/018,229, filed on September 11, 2020, with the title of the invention "SYSTEMS AND METHODS FOR ALUMINUM-CONTAINING FILM REMOVAL," the contents of which are incorporated herein by reference for all purposes. The present technology relates to semiconductor processes and equipment. More specifically, the present technology relates to selectively etching aluminum-containing structures. Integrated circuits are made possible by processes that create complexly patterned material layers on substrate surfaces. Creating patterned material on a substrate requires controlled methods for removing the exposed material. Chemical etching is used for various purposes, including transferring a photoresist pattern into underlying layers, thinning layers, or thinning the lateral dimensions of features already present on the surface. Often, it is desirable to have an etching process that etches one material faster than another, for example, to facilitate the pattern transfer process. Such an etching process is referred to as selective for the first material. As a result of the diversity of materials, circuits, and processes, etching processes with selectivity for various materials have been developed. Etching processes can be referred to as wet or dry based on the materials used in the process. For example, wet etching can preferentially remove some oxide dielectrics compared to other dielectrics and materials. However, wet processes may have difficulty penetrating some constrained trenches and, in some cases, may deform the remaining material. Dry etching, generated from localized plasmas formed within the substrate processing area, can penetrate more constrained trenches and exhibit less deformation of the delicate remaining structures. However, localized plasmas can damage the substrate by generating electric arcs during discharge. Therefore, improved systems and methods that can be used to produce high-quality devices and structures are required. These and other needs are addressed by the present technology. Exemplary etching methods may include the step of flowing a halogen-containing precursor into a substrate processing area of a semiconductor processing chamber. The halogen-containing precursor may be characterized by a gas density of about 5 g/L or more. The methods may include the step of contacting a substrate contained in the substrate processing area with the halogen-containing precursor. The substrate may define an exposed area of an aluminum-containing material. The contact may produce an aluminum halide material. The methods may include the step of flowing an etchant precursor into the substrate processing area. The methods may include the step of contacting the aluminum halide material with the etchant precursor. The methods may include the step of removing the aluminum halide material. In some embodiments, the halogen-containing precursor may include a transition metal, and the etchant precursor may be a chlorine-containing precursor or may include a chlorine-containing precursor. The halogen-containing precursor may include tungsten or niobium. The aluminum-containing material may be aluminum oxide or may include aluminum oxide. The etching method may be a plasma-free etching process. The etching method may be performed at a temperature of about 300 °C or higher. The etching method may be performed at a pressure of about 0.1 Torr or higher. The etching method may be performed at a pressure of about 50 Torr or lower. The methods may include a pretreatment performed before flowing the halogen-containing precursor. The pretreatment may include a step of contacting the substrate with a plasma containing one or more of oxygen, hydrogen, or nitrogen. The methods may include a posttreatment performed following the etching method. The posttreatment may include a step of contacting the substrate with a plasma containing one or more of oxygen, hydrogen, or nitrogen. Some embodiments of the present technology may include etching methods. The methods may include the step of forming a plasma of a treatment precursor comprising one or more of oxygen, hydrogen, or nitrogen to generate treatment plasma effluents. The methods may include the step of flowing the treatment plasma effluents into a substrate treatment area of a semiconductor processing chamber. The methods may include the step of contacting a substrate contained in the substrate treatment area with the treatment plasma effluents. The substrate may define an exposed area of an aluminum-containing material. The treatment plasma effluents may be configured to remove residues from the surface of the aluminum-containing material. The methods may include the step of flowing a first halogen-containing material into a substrate treatment area of a semiconductor processing cha