Search

KR-102961784-B1 - LIGHT EMITTING ELEMENT, MANUFACTURING METHOD OF LIGHT EMITTING ELEMENT AND DISPLAY DEVICE INCLUDING LIGHT EMITTING ELEMENT

KR102961784B1KR 102961784 B1KR102961784 B1KR 102961784B1KR-102961784-B1

Abstract

According to one embodiment of the present invention, a light-emitting element may be provided, comprising: a first semiconductor layer including a first type of semiconductor; a second semiconductor layer including a second type of semiconductor different from the first type; and an active layer disposed between the first semiconductor layer and the second semiconductor layer, the active layer including a first active region in which a first well layer is disposed and a second active region in which a second well layer is disposed; wherein the first well layer has a first bandgap and the second well layer has a second bandgap smaller than the first bandgap, at least a portion of the first active region is disposed between the second active region and the second semiconductor layer, and the distance between the second active region and the second semiconductor layer is at least 0.1 times the distance between the first semiconductor layer and the second semiconductor layer.

Inventors

  • 이승아
  • 박후근
  • 송영진

Assignees

  • 삼성디스플레이 주식회사

Dates

Publication Date
20260511
Application Date
20210304

Claims (20)

  1. A first semiconductor layer including an N-type semiconductor; A second semiconductor layer including a P-type semiconductor; and An active layer disposed between the first semiconductor layer and the second semiconductor layer, comprising a first active region in which a first well layer is disposed and a second active region in which a second well layer is disposed; The above first well layer has a first band gap, The second well layer has a second band gap smaller than the first band gap, The above first active region includes a first-1 active region and a first-2 active region, and The above-mentioned first-1 active region is disposed between the first semiconductor layer and the second active region, and The first and second active regions are disposed between the second semiconductor layer and the second active region, and The second active region is: spaced apart from the first semiconductor layer by a first distance, spaced apart from the second semiconductor layer by a second distance, and the second distance is smaller than the first distance, The above 1-1 active region is directly adjacent to the first semiconductor layer, and the above 1-2 active region is directly adjacent to the second semiconductor layer, and The above active layer includes In, which is a bandgap crystalline material, and The atomic ratio of the bandgap crystal material within the first active region is greater than or equal to the first atomic ratio, and The atomic ratio of the bandgap crystal material within the second active region is greater than or equal to the second atomic ratio, which is greater than the first atomic ratio, and The first distance is 0.2 to 0.35 times the distance between the first semiconductor layer and the second semiconductor layer, and A light-emitting element, wherein the second distance is 0.2 to 0.25 times the distance between the first semiconductor layer and the second semiconductor layer.
  2. In Article 1, In the first active region above, light having a first wavelength can be emitted, and A light-emitting device in which light having a second wavelength greater than the first wavelength can be emitted in the second active region.
  3. delete
  4. delete
  5. delete
  6. In Article 1, A light-emitting element in which the ratio of the second distance to the first distance is 0.55 to 1.
  7. In Article 1, A light-emitting element in which the ratio of the second distance to the first distance is 0.8 to 1.25.
  8. delete
  9. In Article 1, A light-emitting element in which the second atomic ratio is 10% or more.
  10. delete
  11. delete
  12. delete
  13. Step of preparing a laminated substrate; A step of placing a first semiconductor layer including an N-type semiconductor on the above-mentioned stacked substrate; Step of placing an active layer on the first semiconductor layer; and The step of disposing of a second semiconductor layer comprising a P-type semiconductor on the active layer; The step of disposing of the active layer comprises: disposing of a first well layer; disposing of a second well layer; and disposing of at least a portion of the first well layer between the second well layer and the second semiconductor layer. The energy band gap of the second well layer is smaller than the energy band gap of the first well layer, and The active layer comprises a first active region in which the first well layer is disposed and a second active region in which the second well layer is disposed, and The above first active region includes a first-1 active region and a first-2 active region, and The above-mentioned first-1 active region is disposed between the first semiconductor layer and the second active region, and The first and second active regions are disposed between the second semiconductor layer and the second active region, and The second active region is: spaced apart from the first semiconductor layer by a first distance, spaced apart from the second semiconductor layer by a second distance, and the second distance is smaller than the first distance, The above 1-1 active region is directly adjacent to the first semiconductor layer, and the above 1-2 active region is directly adjacent to the second semiconductor layer, and The above active layer includes In, which is a bandgap crystalline material, and The atomic ratio of the bandgap crystal material within the first active region is greater than or equal to the first atomic ratio, and The atomic ratio of the bandgap crystal material within the second active region is greater than or equal to the second atomic ratio, which is greater than the first atomic ratio, and The first distance is 0.2 to 0.35 times the distance between the first semiconductor layer and the second semiconductor layer, and A method for manufacturing a light-emitting device, wherein the second distance is 0.2 to 0.25 times the distance between the first semiconductor layer and the second semiconductor layer.
  14. In Article 13, Light having a first wavelength can be emitted from the first active region, and A method for manufacturing a light-emitting device in which light having a second wavelength greater than the first wavelength can be emitted in the second active region.
  15. In Article 13, The method further includes the step of etching the first semiconductor layer, the active layer, and the second semiconductor layer. The step of placing the first well layer further comprises: the step of placing a first-1 well layer on the first semiconductor layer; and the step of placing a first-2 well layer on the second well layer. The second well layer is disposed between the first-1 well layer and the first-2 well layer, and A method for manufacturing a light-emitting device, wherein the etching step is performed after the step of placing the first and second well layers.
  16. In Article 15, A method for manufacturing a light-emitting device, wherein, in the above-mentioned etching step, the etching process is performed in a direction from the first-2 well layer toward the first-1 well layer.
  17. delete
  18. delete
  19. delete
  20. delete

Description

Light-emitting element, manufacturing method of light-emitting element, and display device including light-emitting element The present invention relates to a light-emitting element, a method for manufacturing a light-emitting element, and a display device including a light-emitting element. With the recent rise in interest in information displays, research and development on display devices is continuously being carried out. FIGS. 1 and FIGS. 2 are a perspective view and a cross-sectional view showing a light-emitting element according to an embodiment. Figure 3 is an enlarged view of the EA area of Figure 2. Figure 4 is a graph showing the energy intensity at different positions of a light-emitting element according to an embodiment. Figure 5 is a graph showing the atomic ratio of bandgap determining material according to position of a light-emitting element according to an embodiment. FIGS. 6 to 13 are cross-sectional views of the process steps of a method for manufacturing a light-emitting element according to an embodiment. FIG. 14 is a plan view showing a display device including a light-emitting element according to an embodiment. FIG. 15 is a cross-sectional view according to I~I' of FIG. 14. The embodiments described in this specification are intended to clearly explain the concept of the invention to those skilled in the art to which the invention pertains; therefore, the invention is not limited by the embodiments described in this specification, and the scope of the invention should be interpreted to include modifications or variations that do not depart from the concept of the invention. The terms used in this specification have been selected to be as widely used as possible, taking into account their functions in the present invention; however, they may vary depending on the intent, custom, or emergence of new technologies of those skilled in the art to which the present invention pertains. However, if a specific term is defined and used with an arbitrary meaning, the meaning of that term will be described separately. Accordingly, the terms used in this specification should be interpreted based on their actual meaning and the content throughout this specification, rather than merely their names. The drawings attached to this specification are intended to facilitate the explanation of the present invention. The shapes depicted in the drawings may be exaggerated as necessary to aid in understanding the present invention, and therefore the present invention is not limited by the drawings. In cases where it is determined that a specific description of known configurations or functions related to the present invention in this specification may obscure the essence of the present invention, such detailed description will be omitted as necessary. The present invention relates to a light-emitting element, a method for manufacturing a light-emitting element, and a display device including a light-emitting element. Hereinafter, with reference to FIGS. 1 to 14, a light-emitting element, a method for manufacturing a light-emitting element, and a display device including a light-emitting element according to an embodiment will be described. FIGS. 1 and 2 illustrate a light-emitting element (LD) included in a display device according to an embodiment. FIGS. 1 and 2 are a perspective view and a cross-sectional view showing a light-emitting element according to an embodiment. FIGS. 1 and 2 illustrate a pillar-shaped light-emitting element (LD), but the type and/or shape of the light-emitting element (LD) is not limited thereto. Referring to FIGS. 1 and 2, the light-emitting element (LD) may include a first semiconductor layer (SEC1) and a second semiconductor layer (SEC2), and an active layer (AL) interposed between the first semiconductor layer (SEC1) and the second semiconductor layer (SEC2). For example, if the extension direction of the light-emitting element (LD) is the length (L) direction, the light-emitting element (LD) may include a first semiconductor layer (SEC1), an active layer (AL), a second semiconductor layer (SEC2), and an electrode layer (ELL) that are sequentially stacked along the length (L) direction. The light-emitting element (LD) may be provided in a columnar shape extending along one direction. The light-emitting element (LD) may have a first end (EP1) and a second end (EP2). One of the first and second semiconductor layers (SEC1, SEC2) may be adjacent to the first end (EP1) of the light-emitting element (LD). The other of the first and second semiconductor layers (SEC1, SEC2) may be adjacent to the second end (EP2) of the light-emitting element (LD). The light-emitting element (LD) may be a light-emitting element manufactured in a columnar shape through an etching method or the like. The columnar shape includes rod-like shapes or bar-like shapes that are long in the length (L) direction (i.e., have an aspect ratio greater than 1), such as a cylindrical column or a polygonal column, an