KR-102962216-B1 - APPARATUS AND METHOD FOR PROCESSING SUBSTRATE

Abstract

The present invention aims to provide a technology for suppressing damage caused by plasma. In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus comprises a chamber, a substrate support installed in the chamber, a gas supply unit installed in the chamber and connected to a source of reaction gas comprising HF gas and C x H y F z gas (where x and z are integers greater than or equal to 1 and y is an integer greater than or equal to 0), and a plasma generating unit configured to generate plasma from the reaction gas supplied from the gas supply unit into the chamber, wherein at least a portion of the part exposed to the plasma in the chamber is composed of a conductive silicon-containing material.

Inventors

• 도무라 마즈

Assignees

• 도쿄엘렉트론가부시키가이샤

Dates

Publication Date

20260507

Application Date

20220428

Priority Date

20210507

Claims (20)

1. chamber and, A substrate support installed within the above chamber, and A gas supply unit installed within the chamber and connected to a source of reaction gas comprising HF gas and C x H y F z gas (where x and z are integers greater than or equal to 1 and y is an integer greater than or equal to 0), and A plasma generation unit configured to generate plasma from the reaction gas supplied into the chamber from the gas supply unit, and As a control unit, the control unit is configured to control the gas supply unit to supply the reaction gas into the chamber such that the ratio of the flow rate of the HF gas to the total flow rate of the reaction gas is maximized in order to etch a silicon-containing film of a substrate supported by the substrate support, and also to control the plasma generation unit to generate plasma from the reaction gas in the chamber. A substrate processing apparatus in which at least a portion of the part exposed to the plasma within the chamber is composed of a conductive silicon-containing material.
2. A substrate processing apparatus according to claim 1, wherein the flow rate of the C x H y F z gas supplied into the chamber is 5 volume% or more with respect to the total flow rate of the reaction gas.
3. A substrate processing apparatus according to claim 1 or 2, wherein the inner wall of the chamber is configured to have a liner attached that includes a conductive silicon-containing material.
4. In claim 1 or 2, further comprising an upper electrode disposed opposite to the substrate support, The above upper electrode is a substrate processing device having the above gas supply unit.
5. A substrate processing apparatus according to claim 4, wherein the upper electrode comprises a top plate having a plurality of gas discharge holes for supplying the reaction gas into the chamber, and the top plate is composed of a conductive silicon material.
6. A substrate processing apparatus according to claim 1 or 2, wherein the apparatus is equipped with a power source for supplying a negative DC voltage or low-frequency RF power to the chamber.
7. A substrate processing device according to claim 4, having a power source for supplying a negative DC voltage or low-frequency RF power to the upper electrode.
8. A substrate processing apparatus according to claim 1 or 2, wherein the side wall constituting the chamber has the gas supply unit.
9. A process for preparing a substrate having a silicon-containing film on a substrate support in a chamber, and A process for supplying a reaction gas comprising HF gas and C x H y F z gas (where x and z are integers greater than or equal to 1 and y is an integer greater than or equal to 0) into the chamber, wherein the reaction gas is such that the ratio of the flow rate of the HF gas to the total flow rate of the reaction gas is the largest, and To etch the silicon-containing film, the method includes a process of generating plasma from the reaction gas supplied into the chamber, and A substrate processing method in which at least a portion of the part exposed to the plasma within the chamber is composed of a conductive silicon-containing material.
10. A substrate treatment method according to claim 9, wherein the flow rate of the C x H y F z gas is 5 volume% or more with respect to the total flow rate of the reaction gas.
11. A substrate processing method according to claim 9 or 10, wherein the inner wall of the chamber is configured to have a liner attached that includes the conductive silicon-containing material.
12. A substrate processing method according to claim 9 or 10, wherein in the process of generating the plasma, a negative DC voltage or low-frequency RF power is supplied to the chamber.
13. A substrate processing method according to claim 9 or 10, wherein the side wall constituting the chamber comprises a gas supply unit for supplying the reaction gas into the chamber.
14. A substrate processing method according to claim 9 or 10, further comprising an upper electrode disposed opposite to the substrate support, wherein the upper electrode comprises a gas supply unit for supplying the reaction gas into the chamber.
15. A substrate processing method according to claim 14, wherein the upper electrode comprises a top plate having a plurality of gas discharge holes for supplying the reaction gas into the chamber, and the top plate is composed of a conductive silicon material.
16. A substrate processing method according to claim 14, wherein a negative DC voltage or low-frequency RF power is supplied to the upper electrode in the process of generating the plasma.
17. A substrate processing method according to claim 9 or 10, wherein the C x H y F z gas is at least one selected from the group consisting of C 4 H 2 F 6 gas, C 4 H 2 F 8 gas, C 3 H 2 F 4 gas and C 3 H 2 F 6 gas.
18. A substrate treatment method according to claim 9 or 10, wherein the reaction gas further comprises at least one selected from the group consisting of a halogen-containing gas, an oxygen-containing gas, and a nitrogen-containing gas.
19. A substrate processing apparatus according to claim 1 or 2, wherein the reaction gas further comprises a phosphorus-containing gas.
20. A substrate treatment method according to claim 9 or 10, wherein the reaction gas further comprises a phosphorus-containing gas.

Description

Apparatus and Method for Processing Substrate An exemplary embodiment of the present disclosure relates to a substrate processing apparatus and a substrate processing method. For example, Patent Document 1 discloses a technique for coating the inner side of a chamber that processes plasma. Figure 1 is a schematic diagram showing a substrate processing device (1). FIG. 2 is a drawing for explaining an example of the cross-sectional structure of the chamber body (12). Figure 3 is a drawing showing an example of the cross-sectional structure of a substrate (W). Figure 4 is a flowchart illustrating the processing method. Figure 5 is a diagram showing an example of the shape of a mask film (MK) after etching. Figure 6 is a diagram showing an example of the cross-sectional structure of the substrate (W) in step ST3. Hereinafter, each embodiment of the present disclosure will be described. In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus comprises a chamber, a substrate support installed in the chamber, a gas supply unit installed in the chamber and connected to a source of reaction gas comprising HF gas and C x H y F z gas (where x and z are integers greater than or equal to 1 and y is an integer greater than or equal to 0), and a plasma generating unit configured to generate plasma from the reaction gas supplied from the gas supply unit into the chamber, wherein at least a portion of the part exposed to the plasma in the chamber is composed of a conductive silicon-containing material. In one exemplary embodiment, the flow rate of the C x H y F z gas supplied into the chamber is 5 volume% or more relative to the total flow rate of the reaction gas. In one exemplary embodiment, the inner wall of the chamber is configured with a liner attached thereto comprising a conductive silicon-containing material. In one exemplary embodiment, an upper electrode disposed opposite to a substrate support is further provided, and the upper electrode has a gas supply portion. In one exemplary embodiment, the upper electrode comprises a top plate having a plurality of gas discharge holes for supplying reaction gas into the chamber, and the top plate is composed of a conductive silicon material. In one exemplary embodiment, a power source is provided to supply a negative DC voltage or low-frequency RF power to the chamber. In one exemplary embodiment, a power source is provided to supply a negative DC voltage or low-frequency RF power to the upper electrode. In one exemplary embodiment, the side wall constituting the chamber has a gas supply section. In one exemplary embodiment, a substrate processing method is provided. The substrate processing method comprises the steps of preparing a substrate having a silicon-containing film on a substrate support in a chamber, supplying a reaction gas comprising HF gas and C x H y F z gas (where x and z are integers greater than or equal to 1 and y is an integer greater than or equal to 0) into the chamber, and generating a plasma from the reaction gas supplied into the chamber to etch the silicon-containing film, wherein at least a portion of the part exposed to the plasma in the chamber is composed of a conductive silicon-containing material. In one exemplary embodiment, the flow rate of C x H y F z gas is 5 volume% or more relative to the total flow rate of the reaction gas. In one exemplary embodiment, the inner wall of the chamber is configured with a liner attached thereto comprising a conductive silicon-containing material. In one exemplary embodiment, in a process for generating plasma, a negative DC voltage or low-frequency RF power is supplied to the chamber. In one exemplary embodiment, the side wall constituting the chamber is provided with a gas supply section that supplies reaction gas into the chamber. In one exemplary embodiment, an upper electrode is further provided that is positioned opposite to a substrate support, and the upper electrode is provided with a gas supply unit that supplies a reaction gas into a chamber. In one exemplary embodiment, the upper electrode comprises a top plate having a plurality of gas discharge holes for supplying reaction gas into the chamber, and the top plate is composed of a conductive silicon material. In one exemplary embodiment, in a process for generating plasma, a negative DC voltage or low-frequency RF power is supplied to the upper electrode. In one exemplary embodiment, the C x H y F z gas is at least one selected from the group consisting of C 4 H 2 F 6 gas, C 4 H 2 F 8 gas, C 3 H 2 F 4 gas and C 3 H 2 F 6 gas. In one exemplary embodiment, the reaction gas further comprises at least one selected from the group consisting of phosphorus-containing gas, halogen-containing gas, oxygen-containing gas, and nitrogen-containing gas. Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In addition, identical or similar ele