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KR-102962241-B1 - Carrier substrate for electrical, particularly electronic components and method for manufacturing a carrier substrate

KR102962241B1KR 102962241 B1KR102962241 B1KR 102962241B1KR-102962241-B1

Abstract

A carrier substrate (1), particularly a metal-ceramic substrate, comprises an insulating layer (11) and a metal layer (12), wherein the metal layer (12) ends in an etched sidewall profile (2), particularly in a basic direction (P) parallel to the main extension plane (HSE) in at least a region, and When viewed from the basic direction (P), the sidewall profile (2) extends from a first edge (15) on the upper side (31) of the metal layer (12) facing away from the insulating layer (11) to a second edge (16) on the bottom side (32) of the metal layer (12) facing toward the insulating layer (11). When viewed from the basic direction (P), the side wall profile (2) has at least one first section (A1) with a straight course and at least one second section (A2) with a curved course.

Inventors

  • 브리팅, 슈테판
  • 마이어, 안드레아스
  • 탕, 신허

Assignees

  • 로저스 저매니 게엠베하

Dates

Publication Date
20260508
Application Date
20220329
Priority Date
20210329

Claims (19)

  1. A carrier substrate (1) comprising an insulating layer (11) and a metal layer (12), The metal layer (12) ends in a basic direction (P) that proceeds parallel to the main extension plane (HSE) in an area having at least an etched sidewall profile (2), and The above sidewall profile (2) extends from the first edge (15) of the upper side (31) of the metal layer (12) away from the insulating layer (11) when viewed in the basic direction (P) to the second edge (16) of the bottom side (32) of the metal layer (12) facing the insulating layer (11). The above sidewall profile (2) includes at least one first section (A1) having a straight course and at least one second section (A2) having a curved course when viewed from the basic direction (P). The above sidewall profile (2) has at least one local maximum value (21) and at least one local minimum value (22), and the local maximum value is a dome-shaped protrusion, A carrier substrate (1) characterized in that at least one first section (A1) is positioned between the local maximum value (21) and the second edge (16).
  2. A carrier substrate (1) according to claim 1, characterized in that the straight profile of the first section (A1) is inclined at a second angle (W2) between 20° and 50° with respect to the main extension plane (HSE).
  3. A carrier substrate (1) according to claim 1, characterized in that the straight profile of the first section (A1) is inclined at a second angle (W2) between 25° and 40° with respect to the main extension plane (HSE).
  4. A carrier substrate (1) characterized in that, in claim 1, at least one curved region of a second section (A2) is concavely curved.
  5. A carrier substrate (1) according to claim 1, wherein the metal layer (12) has a first thickness (D1) in a central region located outside the sidewall profile (2) and provided as a working surface (17), has a second thickness (D2) at a local maximum value (21), and the ratio of the second thickness (D2) to the first thickness (D1) is less than 0.55.
  6. A carrier substrate (1) characterized in that, in claim 1, the metal layer (12) has a first thickness (D1) in a central region located outside the sidewall profile (2) and provided as a working surface (17), has a second thickness (D2) at a local maximum value (21), and the ratio of the second thickness (D2) to the first thickness (D1) is less than 0.45.
  7. A carrier substrate (1) according to claim 1, wherein a virtual straight first connecting line (V1) passing through the first edge (15) and the second edge (16) is inclined at a first angle (W1) with respect to the bonding surface (25) where the metal layer (12) is bonded to the insulating layer (11), and a virtual straight second connecting line (V2) passing through the second edge (16) and the local maximum value (21) is inclined at a second angle (W2) with respect to the bonding surface (25).
  8. A carrier substrate (1) characterized in that, in claim 1, the sidewall profile (2) extends over a first length (L1) of 150 μm to 1000 μm when viewed from the basic direction.
  9. A carrier substrate (1) characterized in that, in claim 1, the sidewall profile (2) extends over a first length (L1) of 300 μm to 600 μm when viewed from the basic direction.
  10. In a carrier substrate (1) comprising an insulating layer (11) and a metal layer (12), The metal layer (12) ends in a sidewall profile (2) etched in a basic direction (P) parallel to the main extension plane (HSE) in at least some areas, and When viewed from the basic direction (P), the sidewall profile (2) extends from a first edge (15) on the upper side (31) of the metal layer (12) in the direction away from the insulating layer (11) to a second edge (16) on the bottom side (32) of the metal layer (12) toward the insulating layer (11), and The above sidewall profile (2) includes at least one first section (A1) having a convex curved course and at least one second section (A2) having a concave curved course when viewed from the basic direction (P). A carrier substrate (1) characterized in that the first convexly curved section includes a local maximum value which is a dome-shaped protrusion, and the first radius of curvature (R1) exceeds 200 μm.
  11. A carrier substrate (1) characterized in that, in claim 10, the convexly curved first section has a first radius of curvature (R1) exceeding 5000 μm.
  12. A carrier substrate (1) characterized in that, in claim 10, the concavely curved second section (A2) has a second radius of curvature (R2) that may be larger or smaller than the first radius of curvature (R1).
  13. A carrier substrate (1) characterized in that, in claim 10, a bonding layer (12) is formed between a metal layer (10) and an insulating layer (30) in the completed carrier substrate (1), and the bonding layer (13) of the bonding layer (12) has a sheet resistance exceeding 5 ohm/sq.
  14. A carrier substrate (1) characterized in that, in claim 10, a bonding layer (12) is formed between a metal layer (10) and an insulating layer (30) in the completed carrier substrate (1), and the bonding layer (13) of the bonding layer (12) has a sheet resistance exceeding 20 ohm/sq.
  15. A carrier substrate (1) characterized in that, in claim 13, the bonding layer (12) is a bonding layer (13) containing an active metal, and the ratio of the active metal in the bonding layer (13) containing the active metal exceeds 15 weight%.
  16. A carrier substrate (1) characterized in that, in claim 13, the bonding layer (12) is a bonding layer (13) containing an active metal, and the ratio of the active metal in the bonding layer (13) containing the active metal exceeds 25 weight%.
  17. A method for manufacturing a carrier substrate according to any one of claims 1 to 16, wherein the sidewall profile (2) is generated by a single etching step.
  18. A method for manufacturing a carrier substrate according to claim 17, characterized in that a masking having a striped masking section is used over the position of the sidewall profile (2) to be formed thereafter.
  19. A method for manufacturing a carrier substrate (1) according to any one of claims 1 to 16, - A step of providing at least one metal layer (10) and an insulating layer (30) extending along a main extension plane (HSE) - said insulating layer (30) comprises a ceramic element, a glass element, a glass-ceramic element, or a heat-resistant plastic element-, - A step of stacking the at least one metal layer (10) and the insulating layer (30) together along a stacking direction (S) perpendicular to the main extension plane (HSE) - wherein an active metal layer (15) is disposed between the at least one metal layer (10) and the insulating layer (30) -, and A method for manufacturing a carrier substrate characterized by including the step of bonding at least one metal layer (10) to an insulating layer (30) through the active metal layer (15) to form a bonding layer (12) between the at least one metal layer (10) and the insulating layer (30).

Description

Carrier substrate for electrical, particularly electronic components and method for manufacturing a carrier substrate The present invention relates to a carrier substrate for electrical, particularly electronic components and a method for manufacturing a carrier substrate. Carrier substrates are sufficiently known from the prior art, for example, printed circuit boards or circuit boards, such as DE 10 2013 104 739 A1, DE 19 927 046 B4, and DE 10 2009 033 029 A1. Typically, connection regions for electrical components and conductor paths are arranged on one side of the carrier substrate, and the electrical components and conductor paths can be interconnected to form an electrical circuit. Essential components of the carrier substrate are an insulating layer preferably made of ceramic and a metal layer bonded to the insulating layer. An insulating layer made of ceramic has proven to be particularly advantageous due to its relatively high insulation strength. Then, the metal layer can be structured to provide conductor paths and/or connection regions for electrical components. FIG. 1 is a schematic diagram of a carrier substrate according to a preferred first embodiment of the present invention. FIG. 2 is a schematic diagram of a carrier substrate according to a preferred second embodiment of the present invention. FIG. 3 is a schematic diagram of a carrier substrate according to a preferred third embodiment of the present invention. FIG. 4 is a schematic diagram of a carrier substrate according to a preferred fourth embodiment of the present invention. FIG. 1 illustrates a carrier substrate (1) according to a preferred first embodiment of the present invention. This carrier substrate (1) preferably serves as a carrier for electronic or electrical components that can be connected to the carrier substrate (1). Essential components of this carrier substrate (1) are an insulating layer (11) extending along a main extension plane (HSE) and a metal layer (12) bonded to the insulating layer (11). The insulating layer (11) is made of at least one material including ceramic. The metal layer (12) and the insulating layer (11) are stacked vertically with respect to each other along a stacking direction (S) extending perpendicular to the main extension plane (HSE) and are materially bonded to each other through a bonding surface (25). In the finished state, the metal layer (12) is configured to form a conductor path or connection point for an electrical component. For example, such a structure is etched into the metal layer (12). However, a permanent bond, particularly a material bond, must be formed between the metal layer (12) and the insulating layer (11) prior to this. A system for producing a carrier substrate, particularly in a superflat-bonding (SFB) bonding process, to permanently bond a metal layer (12) to an insulating layer (11), wherein the bonding is achieved when a pre-composite of metal and ceramic is heated, for example. For example, the metal layer (12) is a metal layer (12) made of copper, and the metal layer (12) and the insulating layer (11) are bonded using a direct-copper-bonding (DCB) bonding process. Alternatively, the metal layer (12) can be bonded to the ceramic layer (11) using an active soldering process. In particular, the metal layer (12) has an upper side (31) facing away from the ceramic layer (11) and a bottom side (32) facing the ceramic layer (11). Thus, the upper side (31) of the metal layer (12) includes a working surface (17) on which electrical or electronic components can be mounted. The upper side (31) is limited in a direction parallel to the main extension plane (HSE) by a first edge (15), whereas the bottom side (32) of the metal layer (12) is materially bonded to the ceramic layer (11) through a bonding surface (25). The bonding surface (25) is limited outward in a direction parallel to the main extension plane (HSE) by a second edge (16). In this case, when viewed from the stacking direction S perpendicular to the main extension plane (HSE), the first edge (15) and the second edge (16) are not externally limited by the first edge (15) and the second edge (16). They are congruent to each other but offset from each other along the base direction (P). In particular, the base direction (P) is executed, for example, from the central region of the metal layer (12) where the working surface (17) is intended to be, toward the outside of the region of the metal-free carrier substrate (1), that is, the region where the ceramic layer essentially forms the outside of the carrier substrate (1). The first edge (15) is connected by the second edge (16). The sidewall profile (2) extends along the base direction (P). For example, the sidewall profile (2) is created by an etching process, specifically by a single etching step. The sidewall profile (2) forms the outer side of the metal layer (12) in the area between the first edge (15) and the second edge (16), particularly when viewed in a cro