KR-102962301-B1 - PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

KR102962301B1KR 102962301 B1KR102962301 B1KR 102962301B1KR-102962301-B1

Abstract

The present disclosure provides a technology for improving the temperature controllability of a substrate loaded on a substrate support. A plasma processing method by a plasma processing apparatus comprising a base, a substrate support having a substrate support surface that supports a substrate, a first heater capable of adjusting the temperature of the substrate support surface, a first temperature sensor for measuring the temperature of the substrate support surface, a first power adjustment unit for adjusting power supplied to the first heater, and a control unit, wherein the plasma processing method comprises a process of setting the set temperature of the substrate support surface to a first temperature, a process of measuring a first power supplied to the first heater by the first power adjustment unit before the generation of the plasma, a process of measuring a second power supplied to the first heater by the first power adjustment unit after the generation of the plasma, a process of calculating a first heat input from the plasma based on the first power and the second power, and a process of correcting the first temperature to a second temperature based on the first heat input and the thermal resistance between the substrate support and the first temperature sensor.

Inventors

에자키, 쇼타
다카하시, 마사노리
야마다, 가즈히토

Assignees

도쿄엘렉트론가부시키가이샤

Dates

Publication Date: 20260508
Application Date: 20220620
Priority Date: 20210625

Claims (14)

With the bass, A substrate support member having a substrate support surface disposed on the above base and supporting a substrate, and A first heater disposed inside the substrate support member and capable of adjusting the temperature of the substrate support surface, and A first temperature sensor for measuring the temperature of the substrate support surface, and A first power adjustment unit that adjusts the power supplied to the first heater. A plasma treatment method using a plasma treatment apparatus including, A process of setting the temperature of the substrate support surface to a first temperature, and A process of supplying power to the first heater from the first power adjustment unit, and A process of measuring the first power supplied by the first power adjustment unit to the first heater when the temperature of the substrate support surface measured by the first temperature sensor is stabilized at the first temperature before the generation of plasma, and After the generation of the above plasma, when the temperature of the substrate support surface measured by the first temperature sensor stabilizes at the first temperature, a process of measuring the second power supplied by the first power adjustment unit to the first heater, and A process for calculating a first heat input from the plasma based on the first power and the second power, and A process of correcting the first temperature to a second temperature based on the first heat input and the thermal resistance between the substrate support or the substrate and the first temperature sensor. A plasma treatment method including
A plasma treatment method according to claim 1, wherein the substrate support comprises a main body of a dielectric material and an electrode provided within the main body.
A plasma treatment method according to claim 1 or 2, wherein the first temperature sensor is positioned on the base side rather than the first heater.
In claim 1 or 2, the substrate support has a plurality of regions, A plasma treatment method comprising the first heater in each of the plurality of regions.
A plasma treatment method according to claim 4, further comprising the first temperature sensor for each of the plurality of regions.
A plasma treatment method according to claim 1 or 2, wherein the first power adjustment unit adjusts the power supplied to the first heater so that the temperature measured by the first temperature sensor becomes a set temperature.
In claim 1 or 2, the plasma treatment device is A ring support member having a ring support surface disposed on the above base and supporting an annular member, and A second heater capable of adjusting the temperature of the above-mentioned annular member, and A second temperature sensor for measuring the temperature of the ring support surface, and A second power adjustment unit that adjusts the power supplied to the second heater. Includes, A process of setting the temperature of the above ring support surface to a third temperature, and A process of supplying power to the second heater from the second power adjustment unit, and A process of measuring the third power supplied by the second power adjustment unit to the second heater when the temperature of the ring support surface measured by the second temperature sensor is stabilized at the third temperature before the generation of the above plasma, and After the generation of the above plasma, when the temperature of the ring support surface measured by the second temperature sensor stabilizes at the third temperature, a process of measuring the fourth power supplied by the second power adjustment unit to the second heater, and A process for calculating a second heat input from the plasma based on the third power and the fourth power, and A plasma treatment method comprising a process of correcting the third temperature to a fourth temperature based on the second heat input and the thermal resistance between the ring support or the annular member and the temperature sensor.
A plasma treatment method according to claim 7, wherein the ring support is provided separately from the substrate support.
With the bass, A ring support member having a ring support surface disposed on the above base and supporting an annular member, and A second heater capable of adjusting the temperature of the above-mentioned annular member, and A second temperature sensor for measuring the temperature of the ring support surface, and A second power adjustment unit that adjusts the power supplied to the second heater. A plasma treatment method using a plasma treatment apparatus including, A process of setting the temperature of the above ring support surface to a third temperature, and A process of supplying power to the second heater from the second power adjustment unit, and A process of measuring the third power supplied by the second power adjustment unit to the second heater when the temperature of the ring support surface measured by the second temperature sensor is stabilized at the third temperature before the generation of plasma, and After the generation of the above plasma, when the temperature of the ring support surface measured by the second temperature sensor stabilizes at the third temperature, a process of measuring the fourth power supplied by the second power adjustment unit to the second heater, and A process for calculating the amount of heat input from the plasma based on the third power and the fourth power, and A process of correcting the third temperature to a fourth temperature based on the heat input calculated above and the thermal resistance between the ring support or the annular member and the second temperature sensor. A plasma treatment method including
In claim 7, the plasma treatment method wherein the second temperature sensor is positioned on the base side rather than the second heater.
In claim 7, the ring support has a plurality of regions, A plasma treatment method comprising the second heater in each of the plurality of regions.
A plasma treatment method according to claim 11, further comprising the second temperature sensor for each of the plurality of regions.
With the bass, A substrate support member having a substrate support surface disposed on the above base and supporting a substrate, and A heater disposed within the substrate support portion and capable of adjusting the temperature of the substrate support surface, and A temperature sensor for measuring the temperature of the substrate support surface, and A power adjustment unit that adjusts the power supplied to the above heater, and A plasma generation unit for generating plasma, and control unit It is a plasma processing device including, The above control unit is, A process of setting the set temperature of the substrate support surface to a first temperature, and A process of supplying power to the heater from the power adjustment unit, and A process of measuring the first power supplied to the heater by the power adjustment unit when the temperature of the substrate support surface measured by the temperature sensor is stabilized at the first temperature before the generation of the above plasma, and After the generation of the above plasma, when the temperature of the substrate support surface measured by the temperature sensor stabilizes at the first temperature, a process of measuring the second power supplied to the heater by the power adjustment unit, and A process for calculating the amount of heat input from the plasma based on the first power and the second power, and A process of correcting the first temperature to a second temperature based on the heat input calculated above and the thermal resistance between the substrate support or the substrate and the temperature sensor. A plasma processing device that performs...
In paragraph 13, the temperature sensor is a plasma processing device positioned on the base side rather than the heater.

Description

Plasma Processing Method and Plasma Processing Apparatus The present disclosure relates to a plasma treatment method and a plasma treatment apparatus. Patent Document 1 discloses a loading platform having a support member and a base. The support member has a loading area having a heater and an outer periphery area surrounding the loading area. Patent Document 1 discloses that a plurality of heaters are also placed in the loading area, and power adjusted individually is supplied to each heater, so that the temperature of a plurality of partial areas of the loading area is adjusted individually. FIG. 1 is a drawing illustrating an example configuration of a plasma processing apparatus according to the present embodiment. FIG. 2 is a drawing illustrating the processing of a plasma processing apparatus according to the present embodiment. FIG. 3 is a diagram illustrating the flow of heat in a state where plasma is not generated for a plasma processing apparatus according to the present embodiment. FIG. 4 is a diagram illustrating the flow of heat in a state where plasma is generated for a plasma processing apparatus according to the present embodiment. FIG. 5 is a flowchart explaining the plasma treatment method of a plasma treatment apparatus according to the present embodiment. Hereinafter, embodiments for implementing the present disclosure will be described with reference to the drawings. Furthermore, in this specification and drawings, substantially identical components are assigned the same number to avoid redundant descriptions. Additionally, for ease of understanding, the scale of each part in the drawings may differ from the actual scale. In directions such as parallel, right angle, orthogonal, horizontal, vertical, up and down, left and right, etc., deviations are permitted to the extent that they do not impair the effect of the embodiment. The shape of the corners is not limited to right angles and may be rounded in an arch shape. Parallel, right angle, orthogonal, horizontal, and vertical may include approximately parallel, approximately right angle, approximately orthogonal, approximately horizontal, and approximately vertical. Below, an example of the configuration of a plasma processing device will be explained using Fig. 1. A capacitively coupled plasma processing device (1) comprises a plasma processing chamber (10), a gas supply unit (20), a power source (30), and an exhaust system (40). Additionally, the plasma processing device (1) comprises a substrate support (11) and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber (10). The gas introduction unit includes a shower head (13). The substrate support (11) is disposed within the plasma processing chamber (10). The shower head (13) is disposed above the substrate support (11). In one embodiment, the shower head (13) constitutes at least a portion of the ceiling of the plasma processing chamber (10). The plasma processing chamber (10) has a plasma processing space (10s) defined by the shower head (13), the side wall (10a) of the plasma processing chamber (10), and the substrate support (11). The plasma treatment chamber (10) has at least one gas supply port for supplying at least one treatment gas to the plasma treatment space (10s) and at least one gas discharge port for discharging gas from the plasma treatment space (10s). The side wall (10a) is grounded. The shower head (13) and the substrate support (11) are electrically insulated from the plasma treatment chamber (10) housing. A substrate support (11) comprises a main body (111) and a ring assembly (112). The main body (111) has a central region (substrate support surface) (111a) for supporting a substrate (wafer) (W) and an annular region (ring support surface) (111b) for supporting a ring assembly (112). The annular region (111b) of the main body (111) surrounds the central region (111a) of the main body (111) when viewed in a plane. A substrate (W) is placed on the central region (111a) of the main body (111), and a ring assembly (112) is placed on the annular region (111b) of the main body (111) to surround the substrate (W) on the central region (111a) of the main body (111). In one embodiment, the main body (111) includes a base (115) and a substrate support (116). The substrate support (116) is, for example, an electrostatic chuck comprising a main body made of dielectric material and an electrode provided within the main body. Additionally, the substrate support (116) may be a ring support that holds and supports a ring assembly (112). The substrate support (116) is fixed to the base (115) through an adhesive layer (117). The base (115) includes a conductive member. The conductive member of the base (115) functions as a lower electrode. The substrate support (116) is disposed on the base (115). The upper surface of the substrate support (116) has a substrate support surface (111a). The subst