KR-102962325-B1 - Light emitting element and display device including the same

KR102962325B1KR 102962325 B1KR102962325 B1KR 102962325B1KR-102962325-B1

Abstract

The present invention relates to a light-emitting element and a display device including the same. A light-emitting element according to one embodiment comprises a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant disposed below the first semiconductor layer, a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, a first intermediate layer disposed on the first semiconductor layer and comprising a metal, and a first electrode layer disposed on the first intermediate layer, wherein the transmittance of light transmitted through the first semiconductor layer, the first intermediate layer, and the first electrode layer is 70% or more.

Inventors

김세영
이종람
조원석
김동욱
박재용
유철종

Assignees

삼성디스플레이 주식회사
포항공과대학교 산학협력단

Dates

Publication Date: 20260508
Application Date: 20210419

Claims (20)

A first semiconductor layer doped with an n-type dopant; A second semiconductor layer disposed below the first semiconductor layer and doped with a p-type dopant; A light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer; A first intermediate layer disposed on the first semiconductor layer and comprising a metal; and It includes a first electrode layer disposed on the first intermediate layer, and The transmittance of light passing through the first semiconductor layer, the first intermediate layer, and the first electrode layer is 70% or more, and A light-emitting device having a concentration gradient in which the n-type dopant doped in the first semiconductor layer has a concentration that increases as it approaches the first intermediate layer.
In Article 1, The first intermediate layer comprises at least one selected from indium (In), tin (Sn), titanium (Ti), aluminum (Al), chromium (Cr), silver (Ag), gold (Au), palladium (Pd), nickel (Ni), tungsten (W), iridium (Ir), platinum (Pt), cobalt (Co), copper (Cu), ruthenium (Ru), rhodium (Rh), rubidium (Rb), lanthanum (La), cerium (Ce), sodium (Na), and europium (Eu), forming a light-emitting element.
In Article 1, A light-emitting element in which one surface of the first intermediate layer contacts the first semiconductor layer and the other surface opposite to the one surface contacts the first electrode layer.
In Article 1, The first intermediate layer is a light-emitting device having a work function between the work function of the first semiconductor layer and the work function of the first electrode layer.
In Article 1, A light-emitting device having a thickness of 1 to 30 nm of the first intermediate layer.
In Article 1, A light-emitting device comprising a first electrode layer including a metal oxide, wherein the metal oxide comprises at least one selected from ITO (indium tin oxide), AlZO (aluminum zinc oxide), IZO (indium zinc oxide), ZnO (zinc oxide), In x O y (indium oxide), Sn x O y (tin oxide), AlO x (aluminum oxide), and Ga x O y (gallium oxide).
In Article 6, A light-emitting device in which the first electrode layer comprises the same material as the first intermediate layer.
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In Article 1, It further includes a second intermediate layer disposed between the first semiconductor layer and the first intermediate layer, A light-emitting element in which one surface of the second intermediate layer contacts the first semiconductor layer, and the other surface opposite to the one surface contacts the first intermediate layer.
In Article 9, The second intermediate layer comprises a metal nitride, and the metal of the metal nitride comprises at least one selected from indium (In), tin (Sn), titanium (Ti), aluminum (Al), chromium (Cr), silver (Ag), gold (Au), palladium (Pd), nickel (Ni), tungsten (W), iridium (Ir), platinum (Pt), cobalt (Co), copper (Cu), ruthenium (Ru), rhodium (Rh), rubidium (Rb), lanthanum (La), cerium (Ce), sodium (Na), and europium (Eu).
In Article 1, A light-emitting element having a contact resistance of 10⁻³ Ω㎠ or less.
In Article 1, A light-emitting device further comprising an insulating film surrounding the first semiconductor layer, the second semiconductor layer, the light-emitting layer, the first intermediate layer, and the first electrode layer.
First substrate; A first electrode and a second electrode spaced apart from each other and disposed on the first substrate; A first insulating layer disposed on the first electrode and the second electrode; A plurality of light-emitting elements disposed on the first electrode and the second electrode on the first insulating layer; and It includes a first connecting electrode in contact with one end of the two ends of the light-emitting element, and a second connecting electrode in contact with the other end of the two ends of the light-emitting element. The light-emitting element comprises a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant disposed below the first semiconductor layer, a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, a first intermediate layer disposed on the first semiconductor layer and containing a metal, and a first electrode layer disposed on the first intermediate layer. The transmittance of light passing through the first semiconductor layer, the first intermediate layer, and the first electrode layer is 70% or more, and The second semiconductor layer is in contact with the first connecting electrode, and the first electrode layer is in contact with the second connecting electrode. A display device having a concentration gradient in which the n-type dopant doped in the first semiconductor layer has a concentration that increases as it approaches the first intermediate layer.
In Article 13, A display device having a thickness of 1 to 30 nm for the first intermediate layer.
In Article 13, A display device in which one surface of the first intermediate layer contacts the first semiconductor layer, and the other surface opposite to the one surface contacts the first intermediate layer.
In Article 13, The first intermediate layer is a display device having a work function between the work function of the first semiconductor layer and the work function of the first electrode layer.
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In Article 13, It further includes a second intermediate layer disposed between the first semiconductor layer and the first intermediate layer, A display device in which one surface of the second intermediate layer contacts the first semiconductor layer, and the other surface opposite to the one surface contacts the first intermediate layer.
In Article 18, The above second intermediate layer is a display device comprising a metal nitride included in the above first intermediate layer.
In Article 13, A display device in which the contact resistance of the light-emitting element is 10⁻³ Ω㎠ or less.

Description

Light emitting element and display device including the same The present invention relates to a light-emitting element and a display device including the same. The importance of display devices is increasing along with the development of multimedia. In response to this, various types of display devices, such as Organic Light Emitting Displays (OLEDs) and Liquid Crystal Displays (LCDs), are being used. As a device for displaying images of a display device, it may include a display panel such as an organic light-emitting display panel or a liquid crystal display panel. Among these, as a light-emitting display panel, it may include a light-emitting element; for example, in the case of a light-emitting diode (LED), there are organic light-emitting diodes (OLEDs) that use organic materials as light-emitting materials and inorganic light-emitting diodes that use inorganic materials as light-emitting materials. FIG. 1 is a schematic plan view of a display device according to one embodiment. FIG. 2 is a plan view showing one pixel of a display device according to one embodiment. Figure 3 is a cross-sectional view taken along the line N1-N1' of Figure 2. Figure 4 is a cross-sectional view taken along the line N2-N2' of Figure 2. FIG. 5 is a schematic diagram of a light-emitting element according to one embodiment. Figure 6 is a cross-sectional view of the light-emitting element of Figure 5. Figure 7 is an energy band diagram schematically illustrating the work function of the connecting electrode and the first semiconductor layer. FIG. 8 is an energy band diagram schematically illustrating the work functions of the connecting electrode, the first intermediate layer, and the first semiconductor layer. FIG. 9 is a cross-sectional view schematically showing a light-emitting element according to another embodiment. FIG. 10 is a cross-sectional view schematically showing a light-emitting element according to another embodiment. FIG. 11 is a cross-sectional view schematically showing a light-emitting element according to another embodiment. Figure 12 is a graph showing the current according to the driving voltage of light-emitting element samples #3 according to Experimental Example 1. Figure 13 is a graph showing the current according to the driving voltage of light-emitting element samples #4 according to Experimental Example 1. Figure 14 is a graph showing the contact resistance according to the heat treatment temperature of light-emitting element samples #1, #2, #3 and #4 according to Experimental Example 1. Figure 15 is a graph showing the current according to the driving voltage of light-emitting element samples #5 according to Experimental Example 2. Figure 16 is a graph showing the current according to the driving voltage of light-emitting element samples #6 according to Experimental Example 2. Figure 17 is a graph showing the contact resistance according to the heat treatment temperature of light-emitting element samples #1, #2, #5 and #6 according to Experimental Example 2. Figure 18 is a graph showing the current according to the driving voltage of light-emitting element samples #7 according to Experimental Example 3. Figure 19 is a graph showing the current according to the driving voltage of light-emitting element samples #8 according to Experimental Example 3. Figure 20 is a graph showing the contact resistance according to the heat treatment temperature of light-emitting element samples #1, #2, #7 and #8 according to Experimental Example 3. Figure 21 is a graph showing transmittance according to the thickness of the first intermediate layer of titanium and the thickness of the first electrode layer of ITO. Figure 22 is a graph showing transmittance according to the thickness of the first intermediate layer of indium and the thickness of the first electrode layer of ITO. Figure 23 is a graph showing transmittance according to the thickness of the first intermediate layer of tin and the thickness of the first electrode layer of ITO. Figure 24 is a graph showing the average transmittance of substrate samples according to the heat treatment temperature in accordance with Experimental Example 4. The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. When elements or layers are referred to as being "on" another element or layer, this may include cases where another layer or element is interposed directly on or in the middle of another element. Throughout the specification, the same referenc