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KR-102962389-B1 - PROCESSING METHOD OF SUBSTRATE

KR102962389B1KR 102962389 B1KR102962389 B1KR 102962389B1KR-102962389-B1

Abstract

A substrate processing method according to an embodiment of the present invention is a substrate processing device comprising a process chamber having a processing space formed for processing a substrate, a gas injection unit for supplying gas to the processing space, a substrate support unit for seating the substrate, and a plurality of lift pins penetrating the substrate support unit to space the substrate from the substrate support unit, wherein the method may include: a step of seating a substrate on a lift pin inside the process chamber; a first processing step of pumping the inside of the process chamber by positioning the distance between the substrate support unit and the lift pin at a first interval; a second processing step of supplying a first gas inside the process chamber by positioning the distance between the substrate support unit and the lift pin at a second interval; and a step of repeating the first processing step and the second processing step at least once in a cycle.

Inventors

  • 유연강
  • 김태학
  • 이인재
  • 이다희

Assignees

  • 주식회사 원익아이피에스

Dates

Publication Date
20260512
Application Date
20201222

Claims (7)

  1. A method for processing a substrate of a substrate processing apparatus comprising: a process chamber having a processing space formed therein for processing a substrate; a gas injection unit for supplying gas to the processing space; a heater for controlling the temperature of the substrate; a substrate support unit for mounting the substrate; and a plurality of lift pins penetrating the substrate support unit to support the substrate spaced apart from the substrate support unit. A step of placing a substrate on a lift pin inside a process chamber; A first processing step of pumping the inside of the process chamber by positioning the distance between the substrate support and the lift pin at a first interval; A second processing step of positioning the distance between the substrate support and the lift pin at a second interval and supplying a first gas inside the process chamber to increase heat transfer from the substrate support to the substrate; and A step of repeating the cycle including the first processing step and the second processing step at least once; A substrate processing method characterized by including
  2. In paragraph 1, A substrate processing method characterized in that the first gap is wider than the second gap.
  3. In paragraph 1, A substrate processing method characterized by using an inert gas containing nitrogen (N) as the first gas.
  4. In paragraph 1, A substrate processing method characterized by the lift pin moving up and down to position the distance between the substrate support and the lift pin at the first interval or the second interval.
  5. In paragraph 1, A substrate processing method characterized by the substrate support member moving vertically up and down to position the distance between the substrate support member and the lift pin at the first interval or the second interval.
  6. delete
  7. In paragraph 1, After the step of repeating the cycle including the first processing step and the second processing step at least once, A substrate processing method characterized by further including the step of seating the substrate on the substrate support.

Description

Substrate Processing Method {PROCESSING METHOD OF SUBSTRATE} The present invention relates to a substrate processing method, and more specifically, to a substrate processing method capable of improving the warping state of a substrate. Semiconductor and display devices are manufactured by repeatedly performing unit processes, such as thin-film lamination, ion implantation, and heat treatment, on a substrate to form a device having the desired circuit operating characteristics. At this time, the substrate is generally stored in a sealed cassette and transported to the process equipment, where it is introduced by a transport robot. Subsequently, the processed substrate is removed from the process equipment by the transport robot, placed back into a cassette, and transported to the process equipment for the next process. Meanwhile, the substrate may be deformed during the execution of various unit processes. In particular, warpage may occur in the substrate; if the transfer robot fails to detect this in advance and attempts to forcibly transfer the substrate, the substrate may detach from the robot arm. In this case, not only is the substrate damaged, but the transfer robot, cassette, and process equipment may also be damaged, and the process may be delayed. FIG. 1 is a flowchart of a substrate processing method according to an embodiment of the present technology. FIGS. 2a to 2d are cross-sectional views briefly illustrating a substrate processing method according to an embodiment of the present technology. The advantages and features of the present technology, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present technology is not limited to the embodiments disclosed below but may be implemented in various different forms; these embodiments are provided merely to ensure that the disclosure of the present technology is complete and to fully inform those skilled in the art of the scope of the technology, and the present technology is defined only by the scope of the claims. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity of description. Throughout the specification, the same reference numerals refer to the same components. Warpage of a substrate can be improved through a substrate processing method according to an embodiment of the present technology. A substrate is provided into a process chamber to carry out a process. At this time, warpage of the substrate may occur as heat is transferred unevenly to the center and edge within the substrate during the process of the substrate being seated on a substrate support. The present technology aims to resolve this warpage of the substrate. A substrate processing method according to an embodiment of the present technology can improve warpage by gradually and uniformly transferring heat to the center and edge of the substrate after providing the substrate into a process chamber, without immediately placing the substrate on a substrate support containing a heater, by repeatedly positioning the gap between the substrate support and the substrate at a first gap or a second gap. FIG. 1 is a flowchart of a substrate processing method according to an embodiment of the present technology, and FIG. 2a to 2d are cross-sectional views briefly illustrating a substrate processing method according to an embodiment of the present technology. Referring to FIG. 2a, a substrate processing method according to an embodiment of the present invention may utilize a substrate processing device (10) comprising a process chamber (200) having a substrate processing space formed for processing a substrate (100), a gas injection unit (300) for supplying gas to the substrate processing space, a substrate support unit (400) for seating the substrate (100), and a plurality of lift pins (500) penetrating the substrate support unit (400) for supporting the substrate (100) apart from the substrate support unit (400). Referring to FIGS. 1 and FIGS. 2a, a substrate (100) is provided into a process chamber (200) (S101). The substrate (100) provided into the process chamber (200) can be placed on a lift pin (500). At this time, the lift pin (500) is not at the same height as the substrate support (400), and the lift pin (500) may be positioned higher than the height of the substrate support (400) so that the substrate (100) can be placed on it. The substrate support (400) inside the process chamber (200) may include a heater (not shown) and serves to control the temperature of the substrate (100) and the inside of the process chamber (200) as needed. The substrate (100) placed on the lift pin (500) is positioned such that the distance between the substrate support (400) and the lift pin (500) is a first gap (h1), and a first processing step of pumping the inside of the process chamber (200) is performed (S103). The gap may specify the he