KR-102962415-B1 - INITIATED CHEMICAL VAPOR DEPOSITION APPARATUS FOR DEPOSITING HIGH QUALITY THIN FILM THROUGH BUFFER CHAMBER

KR102962415B1KR 102962415 B1KR102962415 B1KR 102962415B1KR-102962415-B1

Abstract

A chemical vapor deposition apparatus using an initiator according to an embodiment of the present invention comprises a main chamber, a buffer chamber disposed above and connected to the main chamber and including an initiator supply unit that activates and supplies an initiator to the main chamber and a monomer supply unit that supplies a monomer to the main chamber, and a susceptor disposed within the main chamber and supporting one or more substrates on which a polymer organic thin film is deposited by a polymerization reaction of a monomer activated by an activated initiator, wherein the initiator and the monomer are independently supplied to the main chamber through the initiator supply unit and the monomer supply unit, respectively, and the initiator supply unit includes a filament that activates the initiator through high-temperature heating, thereby minimizing the movement path of the activated initiator and enabling the improvement of deposition quality, such as the uniformity of the polymer organic thin film deposited through the smooth supply of the initiator and monomer and the stable polymerization reaction of the monomer.

Inventors

박형상
권혁
정성준
권익선
안영철

Assignees

(주)아이작리서치

Dates

Publication Date: 20260511
Application Date: 20230629

Claims (12)

In a chemical vapor deposition (iCVD) apparatus using an initiator including a buffer chamber, Main chamber; The buffer chamber comprising an initiator supply unit that is positioned and connected to the upper part of the main chamber and activates an initiator to supply it to the main chamber, and a monomer supply unit that supplies a monomer to the main chamber; and A susceptor that supports one or more substrates disposed within the main chamber and on which a polymer organic thin film is deposited by a polymerization reaction of the monomer activated by the activated initiator; The initiator and the monomer are each supplied independently to the main chamber through the initiator supply unit and the monomer supply unit, respectively, and A chemical vapor deposition apparatus using an initiator, characterized in that the initiator supply unit contains a filament that activates the initiator through high-temperature heating.
In paragraph 1, A chemical vapor deposition apparatus using an initiator, characterized in that the monomer supply portion connected to the main chamber is arranged to surround the initiator supply portion, so that the activated initiator and the monomer are independently supplied to the main chamber.
In paragraph 1, It further includes a floor pipe disposed inside the main chamber and extending toward the susceptor from the connected portion of the buffer chamber and the main chamber, A chemical vapor deposition apparatus using an initiator, characterized in that the above-mentioned floor pipe supplies the activated initiator and the monomer to the upper part of the susceptor through conduits independently connected to the initiator supply unit and the monomer supply unit, respectively.
In paragraph 3, A chemical vapor deposition apparatus using an initiator, characterized in that the above-mentioned conduit includes an inner conduit and an outer conduit, the outer conduit is arranged to surround the inner conduit, and the activated initiator is supplied to the upper part of the susceptor through the inner conduit and the monomer is supplied through the outer conduit, respectively.
In paragraph 3, It further includes an inner chamber cover connected to the lower end of the floor pipe and covering the upper end of the susceptor, A chemical vapor deposition apparatus using an initiator, characterized in that the inner chamber cover induces uniform diffusion of the activated initiator and the monomer supplied to the interior.
In paragraph 1, A chemical vapor deposition apparatus using an initiator, characterized by further comprising a showerhead disposed on the upper part of the susceptor and inducing uniform diffusion of the activated initiator and the monomer supplied from the buffer chamber.
In paragraph 1, A chemical vapor deposition apparatus using an initiator characterized in that the above filaments are arranged in a zigzag pattern, and the initiator is activated by absorbing thermal energy while passing through the zigzag pattern of the filaments.
In paragraph 1, A chemical vapor deposition apparatus using an initiator, characterized in that the above filament is formed by winding multiple times in the shape of an air-core coil, and the initiator is activated by absorbing thermal energy while passing through the air-core of the filament.
In paragraph 8, The above-mentioned initiator supply unit includes an initiator flow line through which the initiator passes, and A chemical vapor deposition apparatus using an initiator, characterized in that the initiator flow line is positioned to pass through the hollow core of the filament, thereby preventing the initiator from coming into contact with the filament.
In paragraph 1, The above-mentioned initiator supply unit includes a heater jacket that encloses the outside, and A chemical vapor deposition apparatus using an initiator, characterized in that the heater jacket supplies thermal energy to the interior of the initiator supply unit to activate the initiator.
In paragraph 1, A chemical vapor deposition apparatus using an initiator, characterized in that the susceptor includes a plurality of holders that individually support the substrate, and the plurality of holders share an axis and are spaced apart.
In Paragraph 11, A chemical vapor deposition apparatus using an initiator, characterized in that the plurality of holders above rotate around the axis.

Description

Initialized Chemical Vapor Deposition Apparatus for Depositing High-Quality Thin Film Through Buffer Chamber The present invention relates to a chemical vapor deposition (iCVD) apparatus using an initiator that improves deposition quality, such as enhancing the uniformity of a polymeric organic thin film deposited through the smooth supply of an initiator and a monomer and the stable polymerization reaction of the monomer using a buffer chamber. Initiated Chemical Vapor Deposition (iCVD) is a method for depositing polymeric organic thin films using the polymerization of activated monomers. As a dry process that does not use organic solvents or additives found in conventional liquid-phase spin coating processes, iCVD is gaining recent attention in semiconductor device manufacturing and other applications due to its ability to form high-purity and high-quality polymeric organic thin films. In a typical iCVD process, monomers and initiators are first introduced into a deposition chamber maintained under vacuum. The introduced initiators are radicalized or activated by the heat of the filament. The activated initiators activate the monomers introduced into the deposition chamber. The activated monomers are adsorbed onto the surface of a substrate or base material requiring thin film deposition and are deposited as a polymeric organic thin film through a polymerization reaction. Methods to improve the quality of the iCVD process include optimizing the filament array structure, optimizing the vacuum formation and process pressure within the deposition chamber, and enabling the activated monomers to stably lose thermal energy to form a uniform polymeric organic thin film. In conventional iCVD devices, a filament and a substrate on which a polymer organic thin film is to be deposited are placed together within the deposition chamber. To induce the polymerization reaction of the activated monomer, the substrate to be deposited must be cooled. However, the high-temperature filament used to activate the initiator in the previous step is positioned close to the top of the substrate, which hinders the cooling of the substrate. This impedes the smooth polymerization reaction of the monomer, thereby adversely affecting the deposition rate and quality of the polymer organic thin film. Furthermore, depending on the arrangement of the filament, complete planar temperature uniformity cannot be ensured, and the distribution of high heat across the substrate becomes non-uniform; this, in turn, adversely affects the uniformity and quality of the polymer organic thin film. Meanwhile, if a filament is placed outside the deposition chamber, i.e., the main chamber, and the initiator and monomer are supplied through the same conduit, unnecessary deposition of the monomer may occur in the intermediate path before reaching the substrate or base placed on the susceptor, which may degrade the deposition quality of the thin film and lead to equipment contamination or unnecessary consumption of source gas. Furthermore, as the path for the initiator activated by the filament outside the main chamber to reach the main chamber increases, the aforementioned problems may also occur. FIGS. 1 and 2 are schematic diagrams illustrating a chemical vapor deposition apparatus using an initiator according to embodiments of the present invention. FIGS. 3 and 4 are drawings illustrating vertical and horizontal cross-sections of a buffer chamber according to embodiments of the present invention. FIGS. 5 to 8 are schematic drawings illustrating an initiator supply unit and a filament according to embodiments of the present invention. FIG. 9 is a schematic diagram illustrating a configuration including a shower head according to an embodiment of the present invention. FIGS. 10 and FIGS. 11 are schematic drawings illustrating a configuration including a floor pipe according to an embodiment of the present invention. FIGS. 12 and FIGS. 13 are schematic drawings illustrating a configuration including an inner chamber cover according to an embodiment of the present invention. Figure 14 is a figure showing the FT-IR spectral analysis results for p(EGDMA) thin films deposited through the embodiments and comparative examples of the present invention. The advantages and/or features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same components. Hereinafter, embodiments of the present inventio