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KR-102962543-B1 - Polishing apparatus for substrate, polishing method for substrate using the same and manufacturing method for semiconductor chip including the same

KR102962543B1KR 102962543 B1KR102962543 B1KR 102962543B1KR-102962543-B1

Abstract

A substrate polishing method is provided, comprising: placing a substrate in a substrate polishing device; rotating each of the polishing pad of the substrate polishing device and the substrate; bringing the lower surface of the substrate into contact with the upper surface of the polishing pad; and determining whether maintenance is required of the polishing pad, wherein the polishing pad comprises a plurality of annular regions concentrically having a center point on the upper surface of the polishing pad, and determining whether maintenance is required of the polishing pad comprises: checking the condition of the lower surface of the substrate; and selecting an annular region requiring maintenance among the plurality of annular regions using information regarding the condition of the lower surface of the substrate.

Inventors

  • 박효진
  • 강송윤
  • 박성용
  • 김건우

Assignees

  • 삼성전자주식회사

Dates

Publication Date
20260508
Application Date
20210812

Claims (10)

  1. Substrate; Placing a substrate inside a substrate polishing device; Rotating each of the polishing pad of the substrate polishing device and the substrate; Bringing the lower surface of the above substrate into contact with the upper surface of the above polishing pad; and Determining whether maintenance is required for the above-mentioned grinding pad; including, The above polishing pad includes a plurality of annular regions having a center point on the upper surface of the polishing pad in a homocentric manner, and Determining whether the above-mentioned grinding pad requires maintenance is: Checking the condition of the lower surface of the above substrate; and Selecting an annular region requiring maintenance among the plurality of annular regions using information regarding the condition of the lower surface of the substrate; including Each of the above plurality of annular regions is disposed on each of a plurality of annular pads that are separable from one another, and A substrate polishing method further comprising moving each of the plurality of annular pads up and down to make the levels of at least two annular regions different from each other.
  2. In Article 1, Checking the condition of the lower surface of the substrate includes identifying a target area among the lower surface of the substrate where improvement in the polishing state is required. A substrate polishing method comprising selecting an annular region requiring maintenance among the plurality of annular regions, wherein contact annular regions among the plurality of annular regions that come into contact with the target region when the lower surface of the rotating substrate comes into contact with the upper surface of the rotating polishing pad.
  3. In Article 2, Bringing the lower surface of the substrate into contact with the upper surface of the polishing pad includes the lower surface of the substrate contacting the upper surface of the polishing pad within the polishing position and being polished. A substrate polishing method comprising selecting an annular region requiring maintenance among the plurality of annular regions, further including selecting a target annular region located furthest from the center point of the polishing position among the contact annular regions.
  4. In Paragraph 3, Further including maintaining the above-mentioned polishing pad, A substrate polishing method comprising maintaining the polishing pad, which includes changing the condition of the target annular region.
  5. In Article 4, A substrate polishing method comprising changing the condition of the target annular region, including changing at least one of the modulus of elasticity, hardness, roughness, density, porosity, or groove shape of the target annular region.
  6. In Paragraph 3, Further including maintaining the above-mentioned polishing pad, A substrate polishing method comprising maintaining the polishing pad and replacing the target annular region.
  7. Preparing the substrate; Placing the above substrate within a substrate polishing device; Rotating each of the polishing pad of the substrate polishing device and the substrate; and Bringing the lower surface of the substrate into contact with the upper surface of the polishing pad; comprising, Bringing the lower surface of the substrate into contact with the upper surface of the polishing pad includes the lower surface of the substrate contacting the upper surface of the polishing pad within the polishing position and being polished. The above polishing pad is: A central region in the shape of a disc including the center point of the upper surface of the polishing pad; and annular regions surrounding the central region and having the center point homocentric; comprising, In the outermost annular region among the annular regions that partially overlap with the polishing position in a planar view, the radial width of the outer overlapping section in which the outer annular region overlaps with the polishing position is smaller than the radial widths of each of the other annular regions that overlap with the polishing position. Each of the above annular regions is disposed on each of the annular pads that are separable from one another, and A method for manufacturing a semiconductor device further comprising moving each of the plurality of annular pads up and down to make the levels of at least two annular regions different from each other.
  8. In Article 7, A method for manufacturing a semiconductor device in which the radial width of the outer overlapping section is 1 mm to 10 mm.
  9. Polishing pad; and A polishing head that contacts the substrate with the polishing pad within the polishing position; comprising, The above polishing pad includes a plurality of pads, and The above plurality of pads are: A disc-shaped central pad including the center point of the upper surface of the polishing pad; and Annular pads surrounding the central pad and having the center point homocentric; comprising, In the innermost overlapping pad among the pads that partially overlap with the polishing position in a planar view, the radial width of the inner overlapping section in which the inner overlapping pad overlaps with the polishing position is smaller than the respective radial widths of the other pads that overlap with the polishing position. The above annular pads are separable from each other, and A substrate polishing device further comprising a driving device that enables at least one of the above-mentioned annular pads to move up and down.
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Description

Polishing apparatus for substrate, polishing method for substrate using the same, and manufacturing method for semiconductor chip including the same The present invention relates to a substrate polishing apparatus, a substrate polishing method using the same, and a method for manufacturing a semiconductor device including the same. More specifically, the invention relates to a substrate polishing apparatus capable of controlling polishing by region of a substrate, a substrate polishing method using the same, and a method for manufacturing a semiconductor device including the same. The manufacturing of semiconductor devices can be performed through various processes. For example, the manufacturing of semiconductor devices may proceed through photolithography, etching, and deposition processes on a wafer. Prior to each process, it may be necessary to flatten the surface of the wafer. To this end, a polishing process may be performed on the wafer. The polishing process can be carried out in various ways. For example, a chemical mechanical polishing (CMP) process may be used to flatten the wafer. FIG. 1 is a perspective view showing a substrate polishing apparatus according to embodiments of the present invention. FIG. 2 is a plan view showing a polishing pad of a substrate polishing device according to embodiments of the present invention. Figure 3 is a plan view showing an enlarged view of the X area of Figure 2. FIG. 4A is a flowchart illustrating a method for manufacturing a semiconductor device according to embodiments of the present invention. FIG. 4B is a flowchart illustrating a substrate polishing method according to embodiments of the present invention. Figures 5 to 16 are drawings sequentially illustrating the process of polishing a substrate. FIG. 17 is a plan view showing the state in which a polished substrate is projected onto a polishing position on a polishing pad. Figure 18 is a plan view showing a polished substrate. Figure 19 is a plan view showing an enlarged view of the Y region of Figure 18. FIG. 20 is a perspective view showing a substrate polishing apparatus according to embodiments of the present invention. FIG. 21 is a perspective view showing a substrate polishing apparatus according to embodiments of the present invention. FIG. 22 is a cross-sectional view showing a substrate polishing apparatus according to embodiments of the present invention. FIG. 23 is a plan view showing a polishing pad of a substrate polishing device according to embodiments of the present invention. FIG. 24 is a plan view showing an enlarged view of the X1 area of FIG. 23. FIG. 25 is a plan view showing a polishing pad of a substrate polishing device according to embodiments of the present invention. FIG. 26 is a plan view showing an enlarged view of the X2 area of FIG. 25. FIG. 27 is a plan view showing a polishing pad of a substrate polishing device according to embodiments of the present invention. FIG. 28 is a plan view showing an enlarged view of the X3 area of FIG. 27. Hereinafter, embodiments of the present invention will be described with reference to the attached drawings. Throughout the entire specification, the same reference numerals may refer to the same components. FIG. 1 is a perspective view showing a substrate polishing apparatus according to embodiments of the present invention. In the following, D1 of FIG. 1 may be referred to as the first direction, D2 intersecting the first direction (D1) as the second direction, and D3 intersecting each of the first direction (D1) and the second direction (D2) as the third direction. The first direction (D1) may be referred to as the upper side, and the direction opposite to the first direction (D1) may be referred to as the lower side. Additionally, the second direction (D2) and the third direction (D3) may each be referred to as the horizontal direction. Referring to FIG. 1, a substrate polishing device (A) may be provided. The substrate polishing device (A) may be a device for polishing a substrate. More specifically, the substrate polishing device (A) may be a device for polishing and flattening one side of a substrate through a chemical mechanical polishing (CMP) process. The substrate polished by the substrate polishing device (A) may refer to a semiconductor wafer. The semiconductor wafer may refer to a silicon (Si) wafer, but is not limited thereto. A substrate polishing device (A) may include a stage (3), a polishing pad (1), a polishing head (5), a vacuum pump (VP), a conditioning disk (7), and a slurry supply unit (9). Although not illustrated, the substrate polishing device (A) may further include a driving unit for rotation and parallel movement of each of the stage (3) and/or the polishing pad (1). The stage (3) can support the polishing pad (1). The stage (3) can rotate the polishing pad (1). More specifically, the stage (3) can rotate by means of a driving unit, etc., to rotate the polishing pad (1). The polishing pad (1) may have a disc